GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
NPT2020
1
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Rev. V1
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
Ordering Information
Part Number Package
NPT2020 Bulk Quantity
NPT2020-SMBPPR Custom Sample Board1
NPT2020-SMB2 1250-1850 MHz
Sample Board
Features
GaN on Si HEMT Depletion Mode Transistor
Suitable for Linear and Saturated Applications
Tunable from DC - 3.5 GHz
48 V Operation
13.5 dB Gain at 3.5 GHz
55 % Drain Efficiency at 3.5 GHz
100 % RF Tested
Standard package with bolt down flange
RoHS* Compliant and 260°C reflow compatible
Description
The NPT2020 GaN HEMT is a wideband transistor
optimized for DC - 3.5 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 50 W (47 dBm) in an industry
standard surface mount package.
The NPT2020 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Functional Schematic
Pin Configuration
Pin No. Pin Name Function
1 RFIN / VG RF Input / Gate
2 RFOUT / VD RF Output / Drain
3 Flange2 Ground / Source
2. The Flange must be connected to RF and DC ground. This
path must also provide a low thermal resistance heat path.
1
3
2
RFIN / VG
RFOUT / VD
Flange
1. When ordering, specify application requirements (frequency,
linearity, etc.)
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
NPT2020
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Rev. V1
RF Electrical Specifications: TA = 25 °C, VDS = 48 V, IDQ = 350 mA
Parameter Test Conditions Symbol Min. Typ. Max. Units
Small Signal Gain CW, 3.5 GHz GSS - 14.5 - dB
Saturated Output Power CW, 3.5 GHz PSAT - 48 - dBm
Drain Efficiency at Saturation CW, 3.5 GHz SAT - 60 - %
Power Gain 3.5 GHz, POUT = 50 W GP 12 13.5 - dB
Drain Efficiency 3.5 GHz, POUT = 50 W 50 55 - %
Ruggedness: Output Mismatch All phase angles VSWR = 10:1, No Device Damage
DC Electrical Characteristics: TA = 25 °C
Parameter Test Conditions Symbol Min. Typ. Max. Units
Drain-Source Leakage Current VGS = -8 V, VDS = 160 V IDLK - - 14 mA
Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK - - 7 mA
Gate Threshold Voltage VDS = 48 V, ID = 14 mA VT -2.5 -1.5 -0.5 V
Gate Quiescent Voltage VDS = 48 V, ID = 350 mA VGSQ -2.1 -1.2 -0.3 V
On Resistance VDS = 2 V, ID = 105 mA RON - 0.34 -
Saturated Drain Current VDS = 7 V pulsed, pulse width 300 µs ID,MAX - 8.2 - A
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
NPT2020
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Rev. V1
3. Exceeding any one or combination of these limits may cause permanent damage to this device.
4. MACOM does not recommend sustained operation near these survivability limits.
5. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours.
Parameter Absolute Maximum
Drain Source Voltage, VDS 160 V
Gate Source Voltage, VGS -10 to 3 V
Gate Current, IG 28 mA
Junction Temperature, TJ +200°C
Operating Temperature -40°C to +55°C
Storage Temperature -65°C to +150°C
6. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple
embedded in heat-sink.
Parameter Test Conditions Symbol Typical Units
Thermal Resistance VDS = 48 V, TJ = 200°C RJC 2.1 °C/W
Thermal Characteristics6
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these HBM Class 1A
devices.
Absolute Maximum Ratings3,4,5
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
NPT2020
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Rev. V1
Frequency
(MHz) ZS
(Ω)
ZL
(Ω)
PSAT
(W)
GSS
(dB)
Drain Efficiency
at PSAT (%)
2700 1.6 - j7.2 2.9 + j2.3 65 16.2 58
3100 1.5 - j8.6 2.9 + j0.6 64 16.1 55
3500 1.9 - j10.7 2.9 - j0.7 62 15.7 53
Load-Pull Performance: VDS = 48 V, IDQ = 350 mA, TC = 25 °C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Gain vs. Output Power Drain Efficiency vs. Output Power
Impedance Reference ZS and ZL vs. Frequency
ZSZL
11
12
13
14
15
16
17
18
19
30 35 40 45 50
2700 MHz
3100 MHz
3500 MHz
Gain (dB)
Output Power (dBm)
0
10
20
30
40
50
60
30 35 40 45 50
2700 MHz
3100 MHz
3500 MHz
Drain Efficiency (%)
Output Power (dBm)
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
NPT2020
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Rev. V1
Parts measured on evaluation board (20-mil thick
RO4350). Matching is provided using a
combination of lumped elements and transmission
lines as shown in the simplified schematic above.
Recommended tuning solution component
placement, transmission lines, and details are
shown on the next page.
Evaluation Board and Recommended Tuning Solution
3.5 GHz Narrowband Circuit
Description
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (48 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
Bias Sequencing
C14
0.7 pF
C15
10 pF
C9
10 pF
C1
1 μF
C16
3.3 pF
NPT2020
VGS
RFIN
VDS
RFOUT
C2
0.1 μF
C3
0.01 μF
C4
1000 pF
C17
0.6 pF
C13
6.8 pF
C11
4.7 pF
C12
6.8 pF
R1
24.9 Ω
C10
12 pF R2
0 Ω
C5
1 μF
C6
0.1 μF
C7
0.01 μF
C8
1000 pF
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
NPT2020
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Rev. V1
Reference Value Tolerance Manufacturer Part Number
C1, C5 1 µF 10% AVX 1210C105KAT2A
C2, C6 0.1 µF 10% Kemet C1206C104K1RACTU
C3, C7 0.01 µF 10% AVX 12061C103KAT2A
C4, C8 1000 pF 10% Kemet C0805C102K1RACTU
C9 10 pF 5% ATC ATC800B100JT500X
C10 12 pF 5% ATC ATC800B120JT500X
C11 4.7 pF +/- 0.1 pF ATC ATC800B4R7BT500X
C12, C13 6.8 pF +/- 0.1 pF ATC ATC800B6R8BT500X
C14 0.7 pF +/- 0.1 pF ATC ATC800B0R7BT500X
C15 10 pF 5% ATC ATC800A100JT250X
C16 3.3 pF +/- 0.1 pF ATC ATC800B3R3BT500X
C17 0.6 pF +/- 0.1 pF ATC ATC800B0R6BT500X
R1 24.9 Ω 1% Panasonic ERJ-6GEY24R9V
R2 0 Ω 1% Panasonic ERJ-6ENF00R0V
PCB Rogers RO4350, εr = 3.5, 20 mil
Evaluation Board and Recommended Tuning Solution
3.5 GHz Narrowband Circuit
Parts list
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
NPT2020
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Rev. V1
Typical Performance as Measured in the 3.5 GHz Evaluation Board:
CW, VDS = 48 V, IDQ = 350 mA (unless noted)
Gain vs. Output Power over Temperature Drain Efficiency vs. Output Power over Temperature
Quiescent VGS vs. Temperature
0
10
20
30
40
50
60
30 35 40 45 50
+25°C
-40°C
+55°C
Drain Efficiency (%)
Output Power (dBm)
8
9
10
11
12
13
14
30 35 40 45 50
+25°C
-40°C
+55°C
Gain (dB)
Output Power (dBm)
-1.40
-1.35
-1.30
-1.25
-1.20
-1.15
-1.10
-1.05
-50 -25 0 25 50 75 100
175 mA
350 mA
525 mA
VGSQ (V)
Temperature (°C)
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
NPT2020
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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Rev. V1
2-Tone IMD vs. Output Power
2-Tone IMD3 vs. Output Power vs. Quiescent Current 2-Tone Gain vs. Output Power vs. Quiescent Current
Typical 2-Tone Performance as measured in the 3.5 GHz evaluation board:
1 MHz Tone Spacing, VDS = 48 V, IDQ = 350 mA, TC = 25 °C (unless noted)
-50
-45
-40
-35
-30
-25
-20
110 100
175mA
262mA
350mA
437mA
525mA
IMD (dBc)
POUT (W-PEP)
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
110 100
175mA
262mA
350mA
437mA
525mA
Gain (dB)
POUT (W-PEP)
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
NPT2020
9
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Rev. V1
Parts measured on evaluation board (25-mil thick
6010LM). Matching is provided using a
combination of lumped elements and transmission
lines as shown in the simplified schematic above.
Recommended tuning solution component
placement, transmission lines, and details are
shown on the next page.
Evaluation Board and Recommended Tuning Solution
1250-1850 MHz Broadband Circuit
Description
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (48 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
Bias Sequencing
C13
0.2 pF
C1
2.7 pF
C2
27 pF
L1
27 nH
R1
110 Ω
C3
47 pF
C4
10 μF
C6
47 pF
C5
47 pF
C7
1 μF
C8
4.7 μF
R2
0.33 Ω
C9
100 μF
C10
3.9 pF
C12
0.5 pF
C11
39 pF
NPT2020
VGS
RFIN
VDS
RFOUT
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
NPT2020
10
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Rev. V1
Reference Value Tolerance Vendor Part Number
C1 2.7 pF +/- 0.1pF ATC ATC800B2R7BT500X
C2 27 pF 5% ATC ATC800B270JT500X
C3, C5, C6 47pF 5% ATC ATC800B470JT500X
C4 10uF-16V 5% Digikey C2012X5R1C106M085AC
C7 1.0uF-100V 5% Digikey C12101C105KAT2A
C8 4.7uF 5% Digikey C5750X7R2A475K230KA
C9 100uF-63V 5% Panasonic ECE-V1JA101P
C10 3.9pF +/- 0.1pF ATC ATC800B3R9BT500X
C11 39pF 5% ATC ATC800B390JT500X
C12 0.5pF +/- 0.1pF ATC ATC800B0R5BT500X
C13 0.2pF +/- 0.1pF ATC ATC800A0R2BT250X
L1 27nH 5% Coilcraft 0908SQ-27N
R1 110 Ohms 5% Digikey CR1206-JW-1100ELF
R2 0.33 Ohms 5% Digikey ERJ-6RQFR33V
PCB Rogers 6010LM, εr = 10.2, 25 mil
Parts list
Evaluation Board and Recommended Tuning Solution
1250-1850 MHz Broadband Circuit
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
NPT2020
11
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Rev. V1
Typical Performance as Measured in the 1250-1850 MHz Evaluation Board:
CW, VDS = 48 V, IDQ = 350 mA, TA = 25 °C (unless noted)
Gain & Drain Efficiency vs. Frequency (Max Power) Gain & Drain Efficiency vs. Frequency (POUT = 50 W)
Gain & Drain Efficiency vs. POUT
10
20
30
40
50
60
0
5
10
15
20
25
30 35 40 45 50
1850 MHz
1550 MHz
1250 MHz
Drain Efficiency (%)
Gain (dB)
POUT (dBm)
30
40
50
60
70
80
0.0
5.0
10
15
20
25
1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Pout
Drain Efficiency
Gain
Drain Efficiency (%), Pout (W)
Gain (dB)
Frequency (GHz)
30
40
50
60
70
80
0.0
5.0
10
15
20
25
1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Pout
Drain Efficiency
Gain
Drain Efficiency (%), Pout (W)
Gain (dB)
Frequency (GHz)
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
NPT2020
12
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Rev. V1
AC360B-2 Metal-Ceramic Package†
† Meets JEDEC moisture sensitivity level 1 requirements.
Plating is Ni / Au.
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
NPT2020
13
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Rev. V1
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specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
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