AP1203GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance D D Simple Drive Requirement D D Fast Switching Characteristic G SO-8 S S BVDSS 30V RDS(ON) 12m ID 11.2A S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 30 V +20 V 3 11.2 A 3 9 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current 50 A PD@TA=25 Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 50 /W 1 200812291 AP1203GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 30 - - V VGS=10V, ID=10A - - 12 m VGS=4.5V, ID=6A - - 23 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=10A - 17 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=10A - 6 10 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=15V - 1.7 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.4 - nC VDS=15V - 6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 7.5 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 16.5 - ns tf Fall Time RD=15 - 6 - ns Ciss Input Capacitance VGS=0V - 420 670 pF Coss Output Capacitance VDS=25V - 130 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Rg Gate Resistance f=1.0MHz - 3.3 5 Min. Typ. IS=2.1A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 10 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP1203GM 50 50 T A = 25 o C 40 ID , Drain Current (A) ID , Drain Current (A) 40 30 V G =4.0V 20 30 20 10 10 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 20 1.9 ID=6A T A =25 I D = 10 A V G =10V Normalized RDS(ON) 18 16 RDS(ON) (m) 10V 8.0V 7.0V 6.0V V G =4.0V T A = 150 o C 10V 9.0V 8.0V 7.0V 14 12 1.4 0.9 10 0.4 8 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 30 T j =150 o C T j =25 o C 25 Normalized VGS(th) (V) 1.2 IS(A) 20 15 10 0.8 0.4 5 0.0 0 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP1203GM 8 f=1.0MHz 800 6 600 V DS = 15 V V DS = 18 V V DS = 24 V C (pF) VGS , Gate to Source Voltage (V) I D = 10 A 4 2 C iss 400 200 C oss C rss 0 0 0 2 4 6 8 1 10 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 ID (A) 10 100us 1ms 10ms 1 100ms 1s 0.1 T A =25 o C Single Pulse DC Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=125 oC/W 0.001 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D Millimeters 8 7 6 5 E1 1 2 3 4 e B E SYMBOLS MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 c 0.19 0.22 0.25 D 4.80 4.90 5.00 E 5.80 6.15 6.50 E1 3.80 3.90 4.00 e 1.27 TYP G 0.254 TYP L 0.38 0.90 0.00 4.00 8.00 A A1 G 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement 1203GM YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5