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Page <1> V1.012/09/14
NPN General Purpose Transistor
Features:
• High current gain
• Excellent hFE linearity
• Low noise between 30Hz and 15kHz
• For AF input stages and driver applications
Application:
• General purpose switching and amplication
Parameter Symbol Value Units
Collector-Base Voltage VCBO 80
VCollector-Emitter Voltage VCEO 65
Emitter-Base Voltage VEBO 6
Collector Current - Continuous IC0.1 A
Collector Dissipation PC200 mW
Junction and Storage Temperature Tj,Tstg -65 to +150 °C
Maximum Rating @ Ta=25°C unless otherwise specied
Electrical Characteristics @ Ta=25°C unless otherwise specied
Parameter Symbol Test conditions Min. Typ. Max. Unit
Collector-base breakdown voltage V(BR)CBO IC = 10μA, IE = 0 80
VCollector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB = 0 65
Emitter-base breakdown voltage V(BR)EBO IE = 10μA, IC = 0 6
Collector cut-off current ICBO VCB = 70V, IE = 0 0.1
μA
Emitter cut-off current IEBO VEB = 5V, IC = 0 0.1
DC current gain hFE VCE = 5V, IC = 2mA 110 220