SEMITRANSTM 2N
Trench IGBT Module
SKM 195GB126DN
SKM 195GAL126DN
Preliminary Data
Features
! " #
Typical Applications
$ %
&'
%
GB GAL
Absolute Maximum Ratings () * %
Symbol Conditions Values Units
IGBT
+(,,
# () ./,0 * ((, .+!,0 $
#12 + 3,, $
4 5 (,
6 .0 7'1$#78 9 : ;, <<< = +), .+()0 *
$ + < ;,,,
Inverse diode
#> () ./,0 * (,, .+!,0 $
#>12 + 3,, $
#>2 +, ? <? 6 +), * +;), $
Freewheeling diode
#> () ./,0 * (,, .+!,0 $
#>12 () ./,0 * + ;;, .3(,0 $
#>2 +, ? <? 6 +), * +;), $
Characteristics () * %
Symbol Conditions min. typ. max. Units
IGBT
4.0 4 # ! $ ) ) / ! )
# 4 , 6 () .+()0 * , ( , ! $
.70 6 () .+()0 * + ., @0 + +)
4 +) 6 () .+()0 * ; A .A 30 ! A B
.0 # +), $ 4 +) + A .(0 ( +)
% % +, ) >
4 , () + 2C , @ >
, / >
D ()
1E=E < : () .+()0 * , A) .+0 B
%.0 !,, # +), $ 3,,
14 14 )B 6 +() * ;,
%.0 4 5 +) )!,
+,,
.0 +! .(+0 F
Inverse diode
> #> +), $? 4 ,?6 () .+()0 * + ! .+ !0 + / .+ /0
.70 6 () .+()0 * + ., /0 + + ., @0
6 () .+()0 * ; .) 30 ; A .!0 B
#112 #> +), $? 6 +() . 0 * (,, $
G %H% (,,, $HI 33 I
4 , +; ) F
FWD
> #> +), $? 4 , 6 () .+()0 * + ! .+ !0 + / .+ /0
.70 6 () .+()0 * + ., /0 + + ., @0
6 () .+()0 * ; .) 30 ; A .!0 B
#112 #> +), $? 6 +() . 0 * (,, $
G %H% (,,, $HI 33 I
4 , +; ) F
Thermal characteristics
1.6:0 #4J , +! KHL
1.6:0M # M% , 3( KHL
1.6:0>M >LM , 3( KHL
1.:0 % , ,) KHL
Mechanical data
2 N 2! 3 ) 8
2 2) ( ) ) 8
+!,
SKM 195GB126DN
1 14-06-2005 SEN © by SEMIKRON
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SKM 195GB126DN
2 14-06-2005 SEN © by SEMIKRON
Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Zthp(j-c) = f (tp);D=tp/tc= tp*f
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp);D=tp/tc= tp*f
Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current
SKM 195GB126DN
3 14-06-2005 SEN © by SEMIKRON
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
File no. E 63 532 Dimensions in mm
M @3
4J M @3
4$D M @3
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKM 195GB126DN
4 14-06-2005 SEN © by SEMIKRON
