2SJ553STR - Renesas Technology / Hitachi Semiconductor

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Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas

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Renesas Technology Home Page: http://www.renesas.com

Renesas Technology Corp.

Customer Support Dept.

April 1, 2003

To all our customers

Cautions

Keep safety first in your circuit designs!

1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better

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2SJ553(L), 2SJ553(S)

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-650B (Z)

3rd. Edition

Jul. 1998

Features

• Low on-resistance

RDS(on) = 0.028Ω typ.

• Low drive current.

• 4V gate drive devices.

• High speed switching.

Outline

1. Gate

2. Drain

3. Source

4. Drain

123

LDPAK

2SJ553(L),2SJ553(S)

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage VDSS –60 V

Gate to source voltage VGSS ±20 V

Drain current ID–30 A

Drain peak current ID(pulse)Note1 –120 A

Body-drain diode reverse drain current IDR –30 A

Avalanche current IAP Note3 –30 A

Avalanche energy EAR Note3 77 mJ

Channel dissipation Pch Note2 75 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

2SJ553(L),2SJ553(S)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V(BR)DSS –60 — — V ID = –10mA, VGS = 0

Gate to source breakdown voltage V(BR)GSS ±20——V I

G = ±100µA, VDS = 0

Zero gate voltege drain current IDSS — — –10 µAV

DS = –60 V, VGS = 0

Gate to source leak current IGSS ——±10 µAV

GS = ±16V, VDS = 0

Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –1mA, VDS = –10V

Static drain to source on state RDS(on) — 0.028 0.037 ΩID = –15A, VGS = –10V Note4

resistance RDS(on) — 0.038 0.055 ΩID = –15A, VGS = –4V Note4

Forward transfer admittance |yfs| 1525—S I

D = –15A, VDS = –10V Note4

Input capacitance Ciss — 2500 — pF VDS = –10V

Output capacitance Coss — 1300 — pF VGS = 0

Reverse transfer capacitance Crss — 300 — pF f = 1MHz

Turn-on delay time td(on) — 25 — ns VGS = –10V, ID = –15A

Rise time tr— 150 — ns RL = 2Ω

Turn-off delay time td(off) — 350 — ns

Fall time tf— 220 — ns

Body–drain diode forward voltage VDF — –0.95 — V IF = –30A, VGS = 0

Body–drain diode reverse

recovery time trr — 100 — ns IF = –30A, VGS = 0

diF/ dt =50A/µs

Note: 4. Pulse test

2SJ553(L),2SJ553(S)

Main Characteristics

050 100 150 200

–100

–10

–1

–0.1

–0.1 –1 –10

0–2 –4 –6 –8 –10 0 –1–2–3–4–5

–100

–1000

–50

–40

–30

–20

–10 -25 °C

25 °C

1 ms

Ta = 25 °C

10 µs

Pulse Test

V = –10 V

PW = 10 ms (1 shot)

100 µs

–50

–40

–30

–20

–10 –2.5 V

–2 V

V = –10 V

–8 V

–5 V

–3.5 V

–3 V

–4 V

Channel Dissipation Pch (W)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

Drain Current I (A)

Maximum Safe Operation Area

Drain to Source Voltage V (V)

Drain Current I (A)

Typical Output Characteristics

Gate to Source Voltage V (V)

Typical Transfer Characteristics

Operation in

this area is

limited by R

DS(on)

Drain Current I (A)

Case Temperature Tc (°C)

Tc = 75 °C

DC Operation

(Tc = 25 °C)

Pulse Test

2SJ553(L),2SJ553(S)

–5

–4

–3

–2

–1

0–4 –8 –12 –16 –20

0.1

0.08

0.06

0.04

0.02

–40 0 40 80 120 160

0.5

0.05

0.02

0.01–1 –3 –10 –30 –100 –300 –1000

–20 A

0.2

0.1

V = –4 V

–10,–20A

Pulse Test

I = –50 A

V = –10 V

–50 A

–20 A

–10 V

–10 A

V = –4 V

–10 A

–0.1 –1 –10 –100

–0.3 –3 –30

100

0.1

0.3

25 °C

75 °C

V = –10 V

Pulse Test

Gate to Source Voltage V (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

Drain Current I (A)

Drain to Source On State Resistance

R ( )Ω

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature Tc (°C)

R ( )

DS(on)

Static Drain to Source on State Resistance

Ω

Static Drain to Source on State Resistance

vs. Temperature

Drain Current I (A)

Forward Transfer Admittance |y | (S)

Forward Transfer Admittance vs.

Drain Current

Tc = –25 °C

I = –50 A

2SJ553(L),2SJ553(S)

1000

500

200

100

0.1 0.3 30 –10 –20 –30 –40 –50

10000

1000

300

100

–20

–40

–60

–80

–4

–8

–12

–16

–20–100 40 80 120 160 200

1000

200

500

100

–0.1 –0.3 –1 –3 –10

130

V = –10 V

–25 V

–50 V

100

V = –10 V

–25 V

–50 V

3000 Ciss

Coss

Crss

V = 0

f = 1 MHz

–30 –100

d(off)

d(on)

di / dt = 50 A / µs

V = 0, Ta = 25 °C

Reverse Drain Current I (A)

Reverse Recovery Time trr (ns)

Body–Drain Diode Reverse

Recovery Time

Capacitance C (pF)

Drain to Source Voltage V (V)

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

Gate to Source Voltage V (V)

Dynamic Input Characteristics

Drain Current I (A)

Switching Time t (ns)

Switching Characteristics

V = –10 V, V = –30 V

PW = 5 µs, duty < 1 %

GS DD

I = –30 A

2SJ553(L),2SJ553(S)

–50

–40

–30

–20

–10

0–0.4 –0.8 –1.2 –1.6 –2.0

D. U. T

Monitor

50Ω

Vin

–15 V

(BR)DSS

E = • L • I •

V – V

AR AP DSS

DSS DD

–10 V

–5 V

Pulse Test 100

25 50 75 100 125 150

V = 0

I = –30 A

V = –25 V

duty < 0.1 %

Rg > 50

Ω

Channel Temperature Tch (°C)

Repetitive Avalanche Energy E (mJ)

Maximum Avalanche Energy vs.

Channel Temperature Derating

Avalanche Test Circuit Avalanche Waveform

Source to Drain Voltage V (V)

Reverse Drain Current I (A)

Reverse Drain Current vs.

Source to Drain Voltage

2SJ553(L),2SJ553(S)

0.3

0.1

0.03

0.01

10 µ 100 µ 1 m 10 m 100 m 1 10

D = PW

ch – c(t) = s (t) • ch – c

ch – c = 1.67 °C/W, Tc = 25 °C

θ γ θ

Tc = 25°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width

Normalized Transient Thermao Impedance s (t)

Vin Monitor

D.U.T.

Vin

-10 V

= –30 V

td(on)

Vin

90% 90%

10%

Vout

td(off)

Vout

Monitor

50Ω

90%

10%

Switching Time Test Circuit Waveform

2SJ553(L),2SJ553(S)

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (L)

—

1.4 g

10.2 ± 0.3

0.86

0.76 ± 0.1

2.54 ± 0.5

+ 0.2

– 0.1

1.2 ± 0.2

4.44 ± 0.2

1.3 ± 0.15

2.59 ± 0.2

0.4 ± 0.1

11.0 ± 0.5

8.6 ± 0.3

10.0

11.3 ± 0.5

+ 0.3

– 0.5

(1.4)

1.27 ± 0.2

As of January, 2001

Unit: mm

2SJ553(L),2SJ553(S)

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(1)

—

1.3 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.15

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

3.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SJ553(L),2SJ553(S)

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(2)

—

1.35 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.2

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

5.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SJ553(L),2SJ553(S)

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

Hitachi Asia Ltd.

Hitachi Tower

16 Collyer Quay #20-00,

Singapore 049318

Tel : <65>-538-6533/538-8577

Fax : <65>-538-6933/538-3877

URL : http://www.hitachi.com.sg

URL NorthAmerica : http://semiconductor.hitachi.com/

Europe : http://www.hitachi-eu.com/hel/ecg

Asia : http://sicapac.hitachi-asia.com

Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.

(Taipei Branch Office)

4/F, No. 167, Tun Hwa North Road,

Hung-Kuo Building,

Taipei (105), Taiwan

Tel : <886>-(2)-2718-3666

Fax : <886>-(2)-2718-8180

Telex : 23222 HAS-TP

URL : http://www.hitachi.com.tw

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Group III (Electronic Components)

7/F., North Tower,

World Finance Centre,

Harbour City, Canton Road

Tsim Sha Tsui, Kowloon,

Hong Kong

Tel : <852>-(2)-735-9218

Fax : <852>-(2)-730-0281

URL : http://www.hitachi.com.hk

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 585160

Hitachi Europe GmbH

Electronic Components Group

Dornacher Straβe 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

Hitachi Semiconductor

(America) Inc.

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

For further information write to:

Colophon 2.0