e
1
0
20
40
60
80
100
0481216
Input Power (Watts)
Output Power (Watts)
VCC = 25 V
ICQ = 200 mA
f = 900 MH z
Typical O utput Power vs. Input Pow er
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage VCER 40 Vdc
Collector-Base Voltage VCBO 65 Vdc
Emitter-Base Voltage (collector open) VEBO 4.0 Vdc
Collector Current (continuous) IC20 Adc
Total Device Dissipation at Tflange = 25°C PD159 Watts
Above 25°C derate by 0.91 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (Tflange = 70°C) RθJC 1.1 °C/W
PTB 20111
85 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20111 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
25 Volt, 860–900 MHz Characteristics
- Output Power = 85 Watts
- Collector Efficiency = 50% at 85 Watts
- IMD = -30 dBc Max at 60 W(PEP)
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Package 20216
20111
LOT CODE
9/28/98
PTB 20111
2
e
Z Source Z Load
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(BR)CEO 25 30 — Volts
Breakdown Voltage C to E VBE = 0 V, I C = 100 mA V(BR)CES 55 70 — Volts
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts
DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 100 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(VCC = 25 Vdc, Pout = 85 W, ICQ = 200 mA, f = 900 MHz) Gpe 8.5 9.5 — dB
Collector Efficiency
(VCC = 25 Vdc, Pout = 85 W, ICQ = 200 mA, f = 900 MHz) ηC50 — — %
Load Mismatch Tolerance
(VCC = 25 Vdc, Pout = 60 W(PEP), ICQ = 200 mA, Ψ— — 10:1 —
f = 900 MHz—all phase angles at frequency of test)
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 25 Vdc, Pout = 85 W, ICQ = 200 mA)
Frequency Z Source Z Load
MHz R jX R jX
860 1.7 -0.8 1.7 -1.6
880 2.0 -1.2 1.8 -1.9
900 1.7 -0.8 1.7 -1.6
PTB 20111
3
e
Int ermodulat ion Dist ort ion vs. Power Output
-40
-36
-32
-28
-24
-20
20 30 40 50 60 70 80 90
Output Power (Watts-PEP)
IMD (dBc)
VCC = 25 V
ICQ = 200 mA
f1 = 899.95 MHz
f2 = 900.00 MHz
Efficiency vs. O utput P ow er
0
10
20
30
40
50
60
45 50 55 60 65 70 75 80 85 90
Output Po wer (Watts)
Efficiency (%)
VCC = 25 V
ICQ = 200 mA
f = 900 MHz
Gain vs. Frequency
(as measured in a broadband c ircuit)
7
8
9
10
11
860 870 880 890 900
Frequency (MHz)
Gain (dB)
VCC = 25 V
ICQ = 200 mA
Pout = 85 W
Output Power vs. Supply Volt age
50
60
70
80
90
100
18 20 22 24 26 28
Vcc, Supply V oltage
Output Power (Watts)
ICQ = 200 mA
Pin = 10 W
f = 900 MHz
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20111 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
