IRFF9024 - International Rectifier

Features

 Repetitive Avalanche Ratings

 Dynamic dv/dt Rating

 Hermetically Sealed

 Simple Drive Requirements

The HEXFET® technology is the key to International

Rectifier’s HiRel advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state

resistance combined with high trans conductance.

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as voltage control,

very fast switching and temperature stability of the electrical

parameters.

They are well suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio amplifiers

and high energy pulse circuits.

Absolute Maximum Ratings

Symbol Parameter Value Units

ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current -6.4

ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current -4.1

IDM @ TC = 25°C Pulsed Drain Current  -26

PD @TC = 25°C Maximum Power Dissipation 20 W

Linear Derating Factor 0.16 W/°C

VGS Gate-to-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy  120 mJ

IAR Avalanche Current  -6.4 A

EAR Repetitive Avalanche Energy  2.0 mJ

dv/dt Peak Diode Recovery dv/dt  -4.5 V/ns

TJ Operating Junction and

°C

TSTG Storage Temperature Range

Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s)

Weight 0.98 (Typical) g

-55 to + 150

TO-39

IRFF9024

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Product Summary

Part Number BVDSS RDS(on) I

IRFF9024 -60V 0.28 -6.4A

60V, P-CHANNEL

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET®TRANSISTORS

THRU-HOLE TO-205AF (TO-39)

PD-90413A

Description

For Footnotes, refer to the page 2.

International Rectifier HiRel Products, Inc.

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International Rectifier HiRel Products, Inc.

Thermal Resistance 

Symbol Parameter Min. Typ. Max. Units

RJC Junction-to-Case ––– ––– 6.25

RJA Junction-to-Ambient (Typical socket mount) ––– ––– 175 °C/W

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Symbol Parameter Min. Typ. Max. Units Test Conditions

BVDSS Drain-to-Source Breakdown Voltage -60 ––– ––– V VGS = 0V, ID = -1.0mA

BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.068 ––– V/°C Reference to 25°C, ID = -1.0mA

RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.28  VGS = -10V, ID2 = -4.1A 

––– ––– 0.29 VGS = -10V, ID1 = -6.4A 

VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA 

Gfs Forward Transconductance 1.3 ––– ––– S VDS = -15V, ID2 = -4.1A 

IDSS Zero Gate Voltage Drain Current ––– ––– -25 µA VDS = -48V, VGS = 0V

––– ––– -250 VDS = -48V,VGS = 0V,TJ =125°C

IGSS Gate-to-Source Leakage Forward ––– ––– -100 nA VGS = -20V

Gate-to-Source Leakage Reverse ––– ––– 100 VGS = 20V

QG Total Gate Charge 8.4 ––– 19

nC 

ID1 = -6.4A

QGS Gate-to-Source Charge 2.0 ––– 5.4 VDS = -30V

QGD Gate-to-Drain (‘Miller’) Charge 6.0 ––– 11 VGS = -10V

td(on) Turn-On Delay Time ––– ––– 20

VDD = -30V

tr Rise Time ––– ––– 100 ID1 = -6.4A

td(off) Turn-Off Delay Time ––– ––– 23 RG = 7.5

tf Fall Time ––– ––– 44

Ls +LD Total Inductance ––– 7.0 ––– nH 

Measured from Drain lead (6mm / 0.25 in

from package) to Source lead (6mm/ 0.25

in from package) with Source wire

internally bonded from Source pin to Drain

Ciss Input Capacitance ––– 570 –––

pF 

VGS = 0V

Coss Output Capacitance ––– 360 ––– VDS = -25V

Crss Reverse Transfer Capacitance ––– 65 ––– ƒ = 1.0MHz

Source-Drain Diode Ratings and Characteristics

Symbol Parameter Min. Typ. Max. Units Test Conditions

IS Continuous Source Current (Body Diode) ––– ––– -6.4

ISM Pulsed Source Current (Body Diode)  ––– ––– -26

VSD Diode Forward Voltage ––– ––– -6.3 V TJ = 25°C,IS = -6.4A, VGS = 0V

trr Reverse Recovery Time ––– ––– 200 ns TJ = 25°C, IF = -6.4A, VDD ≤-50V

Qrr Reverse Recovery Charge ––– ––– 2.2 µC di/dt = -100A/µs 

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

A 

Footnotes:

Repetitive Rating; Pulse width limited by maximum junction temperature.

VDD = -25V, starting TJ = 25°C, Peak IL = -6.4A

 ISD  -6.4A, di/dt  -200A/µs, VDD  -60V, TJ  150°C, Suggested RG = 7.5Ω

 Pulse width  300 µs; Duty Cycle  2%

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IRFF9024

International Rectifier

Fig 3. Typical Transfer Characteristics

Fig 1. Typical Output Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 2. Typical Output Characteristics

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International Rectifier HiRel Products, Inc.



Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10. Maximum Avalanche Energy

Vs. Drain Current

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International Rectifier HiRel Products, Inc.



Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms

Fig 13b. Gate Charge Test Circuit

Fig 13a. Gate Charge Waveform

Fig 14b. Switching Time Waveforms

Fig 14a. Switching Time Test Circuit

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International Rectifier HiRel Products, Inc.

Case Outline and Dimensions - TO-205AF (TO-39)

101 N. Sepulveda Boulevard, El Segundo, California 90245, USA Tel: +1 (310) 252-7105

2520 Junction Avenue, San Jose, California 95134, USA Tel: +1 (408) 434-5000

205 Crawford Street, Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776

Data and specifications subject to change without notice.

www.infineon.com/irhirel

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International Rectifier HiRel Products, Inc.

IMPORTANT NOTICE

The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The

data contained herein is a characterization of the component based on internal standards and is intended to

demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and

analysis to determine suitability in the application environment to confirm compliance to your system requirements.

With respect to any example hints or any typical values stated herein and/or any information regarding the application of

the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without

limitation warranties on non- infringement of intellectual property rights and any third party.

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this

document and any applicable legal requirements, norms and standards concerning customer’s product and any use of

the product of Infineon Technologies in customer’s applications.

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any

customer’s technical departments to evaluate the suitability of the product for the intended applications and the

completeness of the product information given in this document with respect to applications.

For further information on the product, technology, delivery terms and conditions and prices, please contact your local

sales representative or go to (www.infineon.com/hirel).

WARNING

Due to technical requirements products may contain dangerous substances. For information on the types in question,

please contact your nearest Infineon Technologies office.

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