A Business Partner of Renesas Electronics Corporation. Preliminary NE662M04 / 2SC5508 JEITA Part No. Data Sheet NPN SILICON RF TRANSISTOR R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES ORDERING INFORMATION Order Number Quantity Package NE662M04 2SC5508 NE662M04-A 2SC5508-A 50 pcs (Non reel) NE662M04-T2 2SC5508-T2 NE662M04-T2-A 2SC5508-T2-A 3 kpcs/reel 15 kpcs/reel Flat-lead 4-pin thin-type super minimold (M04) (Pb-Free) * 8 mm wide embossed taping * Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape SE - NE662M04-T2B NE662M04-T2B-A 2SC5508-T2B 2SC5508-T2B-A Supplying Form O Part Number Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TC = 25C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PtotNote Tj Tstg PH A <R> Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz fT = 25 GHz technology adopted Flat-lead 4-pin thin-type super minimold (M04) package UT * * * * * Ratings 15 3.3 1.5 35 115 150 -65 to +150 Unit V V V mA mW C C Note Free air. THERMAL RESISTANCE Parameter Junction to Case Resistance Junction to Ambient Resistance Symbol Rth j-c Rth j-a Ratings 150 650 Unit C /W C /W CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 Page 1 of 8 A Business Partner of Renesas Electronics Corporation. NE662M04 / 2SC5508 Chapter Title ELECTRICAL CHARACTERISTICS (TA = +25 C) Symbol ICBO IEBO hFENote 1 fT |S21e|2 NF Conditions MIN. TYP. MAX. Unit VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 2 V, IC = 5 mA - - 50 - - 70 200 200 100 nA nA - VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 2 V, IC = 20 mA, f = 2 GHz 20 14 25 17 - - GHz dB - 1.1 1.5 dB - - - - 0.18 19 20 11 0.24 - - - pF dB dB dBm - 22 - dBm UT Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Cre Note 2 MAG Note 3 MSG Note 4 Gain 1 dB Compression Output Power PO (1 dB) 3rd Order Intermodulation Distortion Output Intercept Point OIP3 VCE = 2 V, IC = 20 mA Note 5, f = 2 GHz O Reverse Transfer Capacitance Maximum Available Power Gain Maximum Stable Power Gain VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt VCB = 2 V, IE = 0, f = 1 MHz VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 2 V, IC = 20 mA Note 5, f = 2 GHz Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded SE - 3. MAG = S21 (K - (K2 - 1) ) S12 4. MSG = S21 S12 5. Collector current when PO (1 dB) is output hFE CLASSIFICATION Rank FB/YFB T79 50 to 100 PH A Marking hFE Value R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 Page 2 of 8 A Business Partner of Renesas Electronics Corporation. NE662M04 / 2SC5508 TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) Thermal/DC Characteristics TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE, CASE TEMPERATURE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 50 Ptot-TA: Free air Ptot-TA: Mounted on ceramic board (15 mm x 15 mm, t = 0.6 mm) Ptot-TC: When case temperature is specified 150 100 50 0 0 25 50 75 100 125 40 30 20 10 0 150 0.2 0.4 0.6 0.8 1.0 1.2 Base to Emitter Voltage VBE (V) O Ambient Temperature TA (C), Case Temperature TC (C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE VCE = 2 V UT 200 Collector Current IC (mA) Total Power Dissipation Ptot (mW) 250 DC CURRENT GAIN vs. COLLECTOR CURRENT 200 50 VCE = 2 V 500 A 450 A 400 A 350 A 300 A 250 A 200 A 150 A 100 A IB = 50 A 30 20 10 0 DC Current Gain hFE 40 SE - Collector Current IC (mA) 100 0 1 2 3 4 10 1 0.001 5 0.01 Collector to Emitter Voltage VCE (V) 0.1 1 10 100 PH A Collector Current IC (mA) Capacitance/fT Characteristics GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 0.50 f = 1 MHz Gain Bandwidth Product fT (GHz) Reverse Transfer Capacitance Cre (pF) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.40 0.30 0.20 0.10 0 0 1.0 2.0 3.0 4.0 5.0 Collector to Base Voltage VCB (V) VCE = 3 V f = 2 GHz 25 20 15 10 5 0 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 Page 3 of 8 A Business Partner of Renesas Electronics Corporation. NE662M04 / 2SC5508 Cha Gain Characteristics 40 VCE = 2 V IC = 20 mA 35 MSG 30 25 MAG |S21e|2 20 UT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 15 10 5 0 0.1 1.0 10.0 Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 f = 1 GHz VCE = 2 V MSG 20 |S21e|2 15 10 5 0 30 25 f = 2 GHz VCE = 2 V 20 1 10 MAG MSG SE - Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) 30 O INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT |S21e|2 15 10 100 5 0 1 Collector Current IC (mA) 10 100 Collector Current IC (mA) Output Characteristics OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 20 20 125 Pout 10 75 5 50 IC 0 -15 -10 -5 0 25 0 5 Input Power Pin (dBm) Output Power Pout (dBm) 100 Collector Current IC (mA) Output Power Pout (dBm) 15 -5 -20 125 f = 2 GHz VCE = 2 V f = 1 GHz VCE = 2 V Pout 15 100 10 75 5 50 IC 0 -5 -20 25 -15 -10 -5 0 Collector Current IC (mA) PH A OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 0 5 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 Page 4 of 8 A Business Partner of Renesas Electronics Corporation. NE662M04 / 2SC5508 Noise Characteristics Ga 6 25 5 4 20 3 15 10 NF 0 1 10 2 1 0 100 0 1 1 10 0 100 10 O 6 5 Noise Figure NF (dB) Associated Gain Ga (dB) 10 NF 1 5 0 100 0 1 25 20 15 2 1 30 Ga 3 5 Collector Current IC (mA) f = 2.5 GHz VCE = 2 V 4 SE - Noise Figure NF (dB) 20 15 2 0 25 Ga 3 10 NF NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 f = 2.0 GHz VCE = 2 V 4 15 Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 20 3 Collector Current IC (mA) 6 Ga 4 5 1 25 NF 10 Associated Gain Ga (dB) 2 30 f = 1.5 GHz VCE = 2 V UT Noise Figure NF (dB) 5 30 Noise Figure NF (dB) f = 1.0 GHz VCE = 2 V Associated Gain Ga (dB) 6 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT Associated Gain Ga (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 10 0 100 Collector Current IC (mA) PH A Remark The graphs indicate nominal characteristics. <R> S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] [RF Devices] [Device Parameters] URL http://www.renesas.com/products/microwave/ R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 Page 5 of 8 A Business Partner of Renesas Electronics Corporation. NE662M04 / 2SC5508 Cha EQUAL NF CIRCLE VCE = 2 V IC = 5 mA f = 1 GHz VCE = 2 V IC = 5 mA f = 2 GHz Unstable area NFmin = 1.0 dB opt 1.5 dB 2.0 3.0 dB 2.5 dB dB NFmin = 1.1 dB opt 1.5 dB 2.0 3.0 dB 2.5 dB dB 3.5 4.0 dBdB PH A SE - O 4.0 d3.5 dB B UT Unstable area R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 Page 6 of 8 A Business Partner of Renesas Electronics Corporation. NE662M04 / 2SC5508 NOISE PARAMETERS VCE = 2 V, IC = 3 mA VCE = 2 V, IC = 5 mA NFmin (dB) Ga (dB) MAG. ANG. 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 0.78 0.80 0.82 0.93 1.00 1.02 1.04 1.15 21.4 20.7 20.0 17.0 15.6 15.2 14.8 13.5 0.26 0.26 0.26 0.23 0.20 0.19 0.19 0.20 31.7 32.7 34.7 57.0 78.0 86.0 94.2 138.3 opt Rn/50 f (GHz) NFmin (dB) Ga (dB) MAG. ANG. 0.17 0.17 0.17 0.16 0.14 0.14 0.13 0.10 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 0.93 0.94 0.96 1.03 1.07 1.09 1.10 1.17 22.5 21.8 21.1 18.1 16.7 16.3 15.9 14.3 0.12 0.12 0.12 0.09 0.08 0.08 0.08 0.14 28.1 28.8 31.7 71.1 106.2 118.5 130.5 -179.7 VCE = 2 V, IC = 10 mA Rn/50 0.15 0.15 0.15 0.14 0.13 0.13 0.12 0.11 UT opt f (GHz) VCE = 2 V, IC = 20 mA Ga (dB) MAG. 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 1.28 1.29 1.30 1.37 1.41 1.43 1.44 1.51 23.7 23.0 22.3 19.3 17.8 17.3 16.9 15.3 0.07 0.07 0.08 0.13 0.16 0.17 0.19 0.25 ANG. -159.4 -157.5 -155.7 -149.2 -146.1 -145.0 -143.9 -136.7 Rn/50 f (GHz) NFmin (dB) Ga (dB) 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 1.59 1.61 1.63 1.72 1.78 1.79 1.81 1.90 24.5 23.7 23.0 19.9 18.3 17.9 17.5 15.8 opt MAG. 0.26 0.26 0.27 0.30 0.33 0.34 0.35 0.40 ANG. -158.1 -155.5 -153.1 -142.6 -137.3 -135.7 -134.1 -126.5 Rn/50 0.12 0.13 0.13 0.14 0.15 0.06 0.16 0.18 PH A SE - NFmin (dB) O opt f (GHz) R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 Page 7 of 8 A Business Partner of Renesas Electronics Corporation. NE662M04 / 2SC5508 PACKAGE DIMENSIONS UT FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT: mm) (Top View) (Bottom View) 0.65 0.30+0.1 -0.05 0.30+0.1 -0.05 4 1 SE - 1.30 O 3 (1.05) 0.65 0.60 0.65 1.25 2 1.250.1 T79 2.00.1 0.30+0.1 -0.05 0.40+0.1 -0.05 2.050.1 0.590.05 0.11+0.1 -0.05 0.5 PIN CONNECTIONS 1. Emitter 2. Collector PH A <R> 3. Emitter 4. Base R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 Page 8 of 8 NE662M04 / 2SC5508 Data Sheet Revision History Date Page 1.00 2.00 Sep 9, 2004 Mar 5, 2013 - Throughout p.1 p.5 p.8 Description Summary First edition issued Renesas format is applied to this data sheet. ORDERING INFORMATION is modified. Up to date S-PARAMETERS. Added a drawing backside to PACKAGE DIMENSIONS. PH A SE - O UT Rev. All trademarks and registered trademarks are the property of their respective owners. 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