2N682, 2N683, 2N685 - 2N692 and 2N5206 Available on commercial versions PNPN SILICON, REVERSE-BLOCKING, POWER TRIODE THYRISTORS Qualified Levels: JAN and JANTX Qualified per MIL-PRF-19500/108 DESCRIPTION This silicon controlled rectifier device is military qualified up to a JANTX level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * JEDEC registered 2N682, 2N683, 2N685, 2N687 - 2N692 and 2N5206. * JAN and JANTX qualifications are available per MIL-PRF-19500/108. * RoHS compliant versions available (commercial grade only). TO-208 / TO-48 Package APPLICATIONS / BENEFITS * A general purpose, reverse-blocking thyristor. MAXIMUM RATINGS Parameters/Test Conditions Junction Temperature Storage Temperature Gate Voltage (1) Maximum Average DC Output Current (2) Non-repetitive Peak On-State Current @ t = 7 ms Notes: Symbol Value TJ TSTG V GM IO I TSM -65 to +125 -65 to +150 5 16 150 Unit o C C V(pk) A A o 1. This average forward current is for a maximum case temperature of +65 C, and 180 electrical degrees of conduction. 2. Surge rating is non-recurrent and applies only with device in the conducting state. The peak rate of surge current must not exceed 100 amperes during the first 10 s after switching from the off (blocking) state to the on (conducting) state. This time is measured from the point where the thyristor voltage has decayed to 90 percent of its initial blocking value. MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0249, Rev. 1 (120183) (c)2011 Microsemi Corporation Page 1 of 6 2N682, 2N683, 2N685 - 2N692 and 2N5206 MECHANICAL and PACKAGING * * * * * * CASE: Nickel plated copper. TERMINALS: Nickel plated steel, solder dipped. MARKING: Manufacturer's ID, part number, date code, polarity. POLARITY: Terminal 1: gate, terminal 2: cathode, terminal 3 (stud): anode. WEIGHT: 12.36 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N682 (e3) Reliability Level JAN = Jan level JANTX = JANTX level CDS (reference JANS) Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number (See Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol V AA Anode power supply voltage (dc). T4-LDS-0249, Rev. 1 (120183) (c)2011 Microsemi Corporation Page 2 of 6 2N682, 2N683, 2N685 - 2N692 and 2N5206 ELECTRICAL CHARACTERISTICS Parameters / Test Conditions Symbol Repetitive Peak Reverse Voltage And Repetitive peak off-state voltage V RRM and V DRM Parameters / Test Conditions Symbol 2N682 2N683 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 2N5206 (1) Values applicable to zero or negative gate voltage (V GM ). Holding current: Bias condition D; V AA = 24 V maximum; I TM = I F1 = 1 A I T = I F2 = 100 mA trigger voltage source = 10 V trigger PW = 100 s (minimum) R 2 = 20 Reverse blocking current AC method, bias condition D; f = 60 Hz, V RRM = rated Forward blocking current AC method, bias condition D; f = 60 Hz; V DRM = rated Gate trigger voltage and current V 2 = V D = 6 V; R L = 50 ; R e = 20 maximum Forward on voltage I TM = 50 A(pk) (pulse); pulse width = 8.5 ms; maximum; duty cycle = 2 percent maximum Reverse gate current VG = 5 V T4-LDS-0249, Rev. 1 (120183) (c)2011 Microsemi Corporation Min. (1) IH Min. Max. Unit 50 100 200 250 300 400 500 600 700 800 1,000 V (pk) Max. 50 Unit mA I RRM1 2 mA (pk) I DRM1 2 mA (pk) V GT1 I GT1 3 35 V TM 2 V (pk) IG 250 mA V mA Page 3 of 6 2N682, 2N683, 2N685 - 2N692 and 2N5206 ELECTRICAL CHARACTERISTICS (continued) Parameters / Test Conditions Symbol Min. Max. Unit Reverse blocking current (TC = +120 C) AC method, bias condition D; f = 60 Hz; V RRM = rated I RRM2 5 mA (pk) Forward blocking current (TC = +120 C) AC method, bias condition D; f = 60 Hz; V DRM = rated I DRM2 5 mA (pk) Gate trigger voltage (TC = +120 C; R e = 20 max) V 2 = V DM = 50 V; R L = 140 V 2 = V DM = 100 V; R L = 140 V 2 = V DM = 200 V; R L = 140 V 2 = V DM = 250 V; R L = 650 V 2 = V DM = 300 V; R L = 650 V 2 = V DM = 400 V; R L = 3 k V 2 = V DM = 500 V; R L = 3 k V 2 = V DM = 600 V; R L = 3 k V 2 = V DM = 700 V; R L = 3 k V 2 = V DM = 800 V; R L = 3 k V = V = 1 000 V; R = 3 k Reverse blocking current (TC = -65 C) AC method, bias condition D; f = 60 Hz; V RRM = rated Forward blocking current (TC = -65 C) AC method, bias condition D; f = 60 Hz; V DRM = rated Gate trigger voltage and current (TC = -65 C) V 2 = V D = 6 V; R L = 50 ; R e = 20 maximum Exponential rate of voltage rise Bias condition D; T C = +120C minimum, dv/dt = 25 v/s; repetition rate = 60 pps; test duration = 15 s; C = 1.0 F; R L = 50 V AA = 50 V V AA = 100 V V AA = 200 V V AA = 250 V V AA = 300 V V AA = 400 V V AA = 500 V V AA = 600 V V AA = 700 V V AA = 800 V V AA = 1,000 V T4-LDS-0249, Rev. 1 (120183) 2N682 2N683 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 2N5206 2N682 2N683 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 2N5206 (c)2011 Microsemi Corporation V GT2 .25 V I RRM3 2 mA (pk) I DRM3 2 mA (pk) V GT3 I GT2 3 80 V mA VD 47 95 190 240 285 380 475 570 665 760 950 V Page 4 of 6 2N682, 2N683, 2N685 - 2N692 and 2N5206 ELECTRICAL CHARACTERISTICS (continued) Parameters / Test Conditions Circuit-commutated turn-off time T C = +120C minimum; I TM = 10 A; t on = 100 50 s; di/dt = 5 A/s minimum; di/dt = 8 A/s maximum; reverse voltage at t 1 = 15 V minimum; repetition rate = 60 pps maximum; di/dt = 20 V/s; gate bias conditions; gate source voltage = 0 V; gate source resistance = 100 V DM = V DRM = 50 V (pk); V RRM = 50 V maximum 2N682 V DM = V DRM = 100 V (pk); V RRM = 100 V maximum 2N683 V DM = V DRM = 200 V (pk); V RRM = 200 V maximum 2N685 V DM = V DRM = 250 V (pk); V RRM = 250 V maximum 2N686 V DM = V DRM = 300 V (pk); V RRM = 300 V maximum 2N687 V DM = V DRM = 400 V (pk); V RRM = 400 V maximum 2N688 V DM = V DRM = 500 V (pk); V RRM = 500 V maximum 2N689 V DM = V DRM = 600 V (pk); V RRM = 600 V maximum 2N690 V DM = V DRM = 700 V (pk); V RRM = 700 V maximum 2N691 V DM = V DRM = 800 V (pk); V RRM = 800 V maximum 2N692 V DM = V DRM = 1,000 V (pk); V RRM = 1,000 V max. 2N5206 Gate controlled turn-on time V AA = 50 V for 2N682 V AA = 100 V for 2N683, 2N685 through 2N692 and 2N5206 I TM = 10 A; V GG = 10 V; R e = 25 t p1 = 15 5 s; 4 A/s di/dt 200 A/s. T4-LDS-0249, Rev. 1 (120183) 2N682, 2N683, 2N685 through 2N692 and 2N5206 (c)2011 Microsemi Corporation Symbol Min. Max. Unit t off 30 30 30 30 30 30 40 40 60 60 60 s t on 5 s Page 5 of 6 2N682, 2N683, 2N685 - 2N692 and 2N5206 PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Device contour, except on hex head and noted terminal dimensions, is optional within zone defined by CD and OAH, CD not to exceed actual HF. 3. Contour and angular orientation of terminals 1 and 2 with respect to hex portion and to each other are optional. 4. Chamfer or undercut on one or both ends of the hexagonal portion are optional. 5. Square or radius on end of terminal is optional. 6. Minimum difference in terminal lengths to establish datum line for numbering terminals. 7. Dimension SD is pitch diameter of coated threads. 8. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. Ltr Dimensions Inches Millimeters Min Max Min Max b b1 .115 .210 CD CH e2 HF HT OAH S SD SL SU T T1 UD (c)2011 Microsemi Corporation 2.92 5.33 .543 .550 .125 .544 .075 .120 .422 .125 .060 .220 Terminal 1 Terminal 2 Terminal 3 T4-LDS-0249, Rev. 1 (120183) .139 .300 .563 .200 1.193 3.17 13.8 1.9 3.05 1/4 - 28 UNF 2A .453 10.7 .090 .165 .075 .249 3.17 1.52 5.59 Gate Cathode Anode (Stud) Notes 3.53 7.62 3 3 13.8 14.00 2 6 14.3 5.08 30.3 4 2 3 11.5 2.29 4.19 1.9 6.32 5 7 Page 6 of 6