AFT18H356--24SR6
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 63 W asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications covering the frequency range of
1805 to 1995 MHz.
1800 MHz
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
VDD =28Vdc,I
DQA = 1100 mA, VGSB =1.45Vdc,P
out =63WAvg.,
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz 15.1 47.3 7.6 –33.2 –13
1840 MHz 15.5 47.4 7.5 –35.5 –13
1880 MHz 15.0 46.7 7.3 –38.5 –12
1900 MHz
Typical Doherty Single--Carrier W--CDMA Performance: VDD =28Vdc,
IDQA = 950 mA, VGSB =1.3Vdc,P
out = 63 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1930 MHz 15.3 48.4 7.6 –30.3 –18
1960 MHz 15.5 48.1 7.5 –30.6 –16
1995 MHz 15.4 47.8 7.4 –31.2 –12
Features
Advanced High Performance In--Package Doherty
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
Document Number: AFT18H356--24S
Rev. 1, 3/2015
Freescale Semiconductor
Technical Data
NI--1230S--4L2L
(Top View)
RFoutA/VDSA
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
VBWA(1)
6
3
15
24
Carrier
Peaking
Figure 1. Pin Connections
1805–1995 MHz, 63 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
AFT18H356--24SR6
VBWB(1)
1. Device cannot operate with the VDD current
supplied through pin 3 and pin 6.
Freescale Semiconductor, Inc., 2013, 2015.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
AFT18H356--24SR6
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +65 Vdc
Gate--Source Voltage VGS –6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg –65 to +150 C
Case Operating Temperature Range TC–40 to +150 C
Operating Junction Temperature Range (1,2) TJ–40 to +225 C
CW Operation @ TC=25C
Derate above 25C
CW 289
1.9
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 77C, 63 W CW, 28 Vdc, IDQA = 1100 mA, VGSB = 1.45 Vdc, 1880 MHz
RJC 0.47 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (4)
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
On Characteristics -- Side A (4)
Gate Threshold Voltage
(VDS =10Vdc,I
D= 146 Adc)
VGS(th) 1.6 2.1 2.6 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
DA = 1100 mAdc, Measured in Functional Test)
VGSA(Q) 2.4 2.9 3.4 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1.5Adc)
VDS(on) 0.1 0.2 0.3 Vdc
On Characteristics -- Side B (4)
Gate Threshold Voltage
(VDS =10Vdc,I
D= 291 Adc)
VGS(th) 1.6 2.1 2.6 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=2.9Adc)
VDS(on) 0.1 0.2 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
AFT18H356--24SR6
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4 . Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (1,2) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 1100 mA, VGSB =1.45V,
Pout = 63 W Avg., f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 14.5 15.0 17.0 dB
Drain Efficiency D45.0 46.7 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.8 7.3 —dB
Adjacent Channel Power Ratio ACPR —–38.5 –26.0 dBc
Input Return Loss IRL — –12 –8 dB
Load Mismatch (2) (In Freescale Doherty Test Fixture, 50 ohm system) IDQA = 1100 mA, VGSB = 1.45 Vdc, f = 1840 MHz, 1--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth Carriers. PAR = 9.9 dB @ 0.01% Probability on CCDF.
VSWR 10:1 at 31 Vdc, 148 W W--CDMA Output Power
(3 dB Input Overdrive from P1dB with W--CDMA Test Signal)
No Device Degradation
Typical Performance (2) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 1100 mA,
VGSB = 1.45 Vdc, 1805–1880 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —400 (3,4) — W
Pout @ 3 dB Compression Point (5) P3dB —480 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805–1880 MHz bandwidth)
—–24 —
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —80 —MHz
Gain Flatness in 75 MHz Bandwidth @ Pout =63WAvg. GF—0.48 —dB
Gain Variation over Temperature
(–30Cto+85C)
G — 0.02 —dB/C
Output Power Variation over Temperature
(–30Cto+85C) (4)
P1dB —0.026 —dB/C
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. Calculated from load pull P3dB measurements.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
5. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
4
RF Device Data
Freescale Semiconductor, Inc.
AFT18H356--24SR6
Figure 2. AFT18H356--24SR6 Production Test Circuit Component Layout — 1805–1880 MHz
AFT18H356--24S
Rev. 0
D50288
C17
VGGA
C4
R1
C6
C2
C19
C20
C7
C3
R2
C1
R3
VGGB
C18
C5
C12
VDDB
C16
C14
C9
C27
C24
C26
C25
C23
C22
C21
C10
C13
VDDA
C15
C11
C8
CUT OUT AREA
C
P
Z1
Table 5. AFT18H356--24SR6 Production Test Circuit Component Designations and Values — 1805–1880 MHz
Part Description Part Number Manufacturer
C1, C2, C3, C4, C5, C8, C9,
C10, C23, C24
18 F Chip Capacitors GQM2195C2E180FB12D Murata
C6, C19, C22, C25 1.2 F Chip Capacitors GQM2195C2E1R2BB12D Murata
C7, C20 1.5 pF Chip Capacitors GQM2195C2E1R5BB12D Murata
C11, C12 4.7 F Chip Capacitors GRM32ER71H475KA88B Murata
C13, C14, C17, C18 22 F Chip Capacitors C5750Y5V1H226ZT TDK
C15, C16 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp
C21 0.6 pF Chip Capacitor ATC600F0R6BT250XT ATC
C26, C27 2.4 pF Chip Capacitors GQM2195C2E2R4BB12D Murata
R1, R2 2.2 , 1/4 W Chip Resistors CRCW12062R20JNEA Vishay
R3 50 , 10 W Terminator Resistor 81A7031-50-5F Florida Labs
Z1 1900 MHz Band, 5 dB Directional Coupler XC1900A--05S Anaren
PCB Rogers RO4350B, 0.020,r=3.66 D50288 MTL
AFT18H356--24SR6
5
RF Device Data
Freescale Semiconductor, Inc.
Figure 3. AFT18H356--24SR6 Characterization Test Circuit Component Layout — 1805–1880 MHz
AFT18H356--24S
Rev. 1
D50791
VGGA
C3
VGGB
VDDB
VDDA
C17
CUT OUT AREA
R1 C5
C1
R3
C19
C2
C4
R2
C6
C18
C14
C12 C16
C10
C8
C7
C15
C13
C11
C9
C
P
Table 6. AFT18H356--24SR6 Characterization Test Circuit Component Designations and Values — 1805–1880 MHz
Part Description Part Number Manufacturer
C1, C2, C3, C4, C9, C10 18 pF Chip Capacitors GQM2195C2E180FB12D Murata
C5, C6 2.2 F Chip Capacitors C1206C225K4RAC Kemet
C7 24 pF Chip Capacitor ATC100B240JT500XT ATC
C8 10 pF Chip Capacitor ATC100B100JT500XT ATC
C11, C12 2.2 F Chip Capacitors C1825C225J5RAC Kemet
C13, C14 22 F Chip Capacitors C5750Y5V1H226ZT TDK
C15, C16 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
C17, C18 10 F Chip Capacitors C5750X7S2A106M230KB TDK
C19 0.4 pF Chip Capacitor ATC600F0R4BT250XT ATC
R1, R2 2.2 , 1/4 W Chip Resistors CRCW12062R20JNEA Vishay
R3 50 , 10 W Terminator Resistor 81A7031--50--5F Florida Labs
PCB Rogers RO4350B, 0.020,r=3.66 D50791 MTL
6
RF Device Data
Freescale Semiconductor, Inc.
AFT18H356--24SR6
TYPICAL CHARACTERISTICS — 1805–1880 MHz
IRL, INPUT RETURN LOSS (dB)
1760
ACPR
f, FREQUENCY (MHz)
Figure 4. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 63 Watts Avg.
-- 1 3
-- 9
-- 1 0
-- 11
-- 1 2
9
19
18
17
-- 4 0
52
50
48
46
-- 3 0
-- 3 2
-- 3 4
-- 3 6
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
16
15
14
13
12
11
10
1780 1800 1820 1840 1860 1880 1900 1920
44
-- 3 8
-- 1 4
ACPR (dBc)
PARC
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 6 0
-- 1 0
-- 2 0
-- 3 0
-- 5 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
IM3--U
IM5--U
IM5--L
IM7--L
IM7--U
VDD =28Vdc,P
out = 70 W (PEP), IDQA = 1100 mA
VGSB = 1.45 Vdc, Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 1840 MHz
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
30
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
10 50 70 110
0
60
50
40
30
20
10
DDRAIN EFFICIENCY (%)
-- 3 d B = 7 9 W
90
D
PARC
ACPR (dBc)
-- 5 0
-- 2 0
-- 2 5
-- 3 0
-- 4 0
-- 3 5
-- 4 5
18
Gps, POWER GAIN (dB)
17
16
15
14
13
12
-- 1 d B = 3 0 W
-- 2 d B = 5 8 W
IRL
PARC (dB)
-- 2 . 8
-- 2
-- 2 . 2
-- 2 . 4
-- 2 . 6
-- 3
-- 5
Gps 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
IM3--L
1
VDD =28Vdc,I
DQA = 1100 mA, VGSB =1.45Vdc
f = 1840 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
VDD =28Vdc,P
out =63W(Avg.),I
DQA = 1100 mA
VGSB = 1.45 Vdc, Single--Carrier W--CDMA
-- 4 0
Gps
ACPR
AFT18H356--24SR6
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 1805–1880 MHz
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
12
18
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
17
16
10 100 300
10
-- 6 0
ACPR (dBc)
15
14
13
0
-- 3 0
-- 4 0
-- 5 0
Figure 8. Broadband Frequency Response
11
17
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQA = 1100 mA
VGSB =1.45Vdc
15
14
13
GAIN (dB)
16
12
1600 1650 1700 1750 1800 1850 1900 1950 2000
-- 2 0
10
5
0
-- 5
-- 1 0
IRL (dB)
-- 1 5
Gain
IRL
VDD =28Vdc,I
DQA = 1100 mA, VGSB =1.45Vdc
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth 1840 MHz
1805 MHz
1880 MHz
1840 MHz
1805 MHz
1880 MHz
1880 MHz
1840 MHz
1805 MHz
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
8
RF Device Data
Freescale Semiconductor, Inc.
AFT18H356--24SR6
Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,I
DQA = 777 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.20 -- j4.69 1.31 + j4.72 1.12 -- j4.80 16.2 51.5 142 56.2 -- 1 0
1840 1.35 -- j4.79 1.46 + j4.96 1.10 -- j4.89 16.1 51.5 140 55.5 -- 9
1880 1.61 -- j4.95 1.77 + j5.18 1.10 -- j4.93 16.4 51.4 139 55.4 -- 9
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.20 -- j4.69 1.20 + j4.92 1.07 -- j4.99 13.9 52.3 169 57.2 -- 1 5
1840 1.35 -- j4.79 1.36 + j5.19 1.08 -- j5.07 13.9 52.2 166 56.6 -- 1 5
1880 1.61 -- j4.95 1.69 + j5.47 1.10 -- j5.15 14.1 52.1 163 55.9 -- 1 5
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 8. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD =28Vdc,I
DQA = 777 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.20 -- j4.69 1.25 + j4.80 2.59 -- 3.98 19.1 49.6 90 68.3 -- 1 6
1840 1.35 -- j4.79 1.41 + j5.01 2.49 -- j4.11 19.0 49.5 90 66.8 -- 1 4
1880 1.61 -- j4.95 1.69 + j5.21 2.30 -- j4.09 19.1 49.5 89 65.1 -- 1 4
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.20 -- j4.69 1.15 + j4.94 2.51 -- j4.15 17.0 50.3 108 68.2 -- 2 3
1840 1.35 -- j4.79 1.33 + j5.19 2.45 -- j4.29 16.8 50.3 107 66.1 -- 2 1
1880 1.61 -- j4.95 1.63 + j5.45 2.22 -- j4.17 17.0 50.2 104 64.0 -- 2 1
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
AFT18H356--24SR6
9
RF Device Data
Freescale Semiconductor, Inc.
Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,V
GSB =1.4Vdc,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.07 -- j4.05 0.98 + j4.30 1.38 -- j4.37 14.0 54.6 291 58.2 -- 2 7
1840 1.23 -- j4.30 1.24 + j4.67 1.40 -- j4.58 13.8 54.7 293 57.4 -- 2 6
1880 1.45 -- j4.70 1.76 + j5.14 1.44 -- j4.72 13.8 54.6 288 56.5 -- 2 8
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.07 -- j4.05 0.951 + j4.39 1.98 -- j3.71 13.2 54.4 277 68.0 -- 3 7
1840 1.23 -- j4.30 1.25 + j4.81 1.83 -- j4.08 12.7 54.9 307 65.6 -- 3 7
1880 1.45 -- j4.70 1.88 + j5.34 2.11 -- j4.65 12.1 55.0 316 59.5 -- 2 8
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 10. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD =28Vdc,V
GSB =1.4Vdc,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.07 -- j4.05 0.853 + j4.24 2.37 -- j1.94 15.4 51.6 145 73.1 -- 3 6
1840 1.23 -- j4.30 1.08 + j4.59 2.18 -- j2.05 15.4 51.6 144 73.1 -- 3 6
1880 1.45 -- j4.70 1.55 + j5.03 2.14 -- j2.33 15.3 51.8 150 72.0 -- 3 6
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1805 1.07 -- j4.05 0.92 + j4.37 2.53 -- j2.47 13.4 52.9 193 73.1 -- 4 3
1840 1.23 -- j4.30 1.19 + j4.76 2.34 -- j2.65 13.4 53.0 200 73.2 -- 4 3
1880 1.45 -- j4.70 1.81 + j5.26 2.89 -- j3.68 12.9 54.0 249 74.2 -- 3 7
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
10
RF Device Data
Freescale Semiconductor, Inc.
AFT18H356--24SR6
P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 9. P1dB Load Pull Output Power Contours (dBm)
REAL ()
IMAGINARY ()
1.5
142.5
233.5
-- 6
-- 3 . 5
-- 4
-- 4 . 5
-- 5
-- 5 . 5
-- 3
Figure 10. P1dB Load Pull Efficiency Contours (%)
REAL ()
IMAGINARY ()
1.5
142.5
233.5
-- 6
-- 3 . 5
-- 4
-- 4 . 5
-- 5
-- 5 . 5
-- 3
IMAGINARY ()
1.5
142.5
233.5
-- 6
-- 3 . 5
-- 4
-- 4 . 5
-- 5
-- 5 . 5
-- 3
Figure 11. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 12. P1dB Load Pull AM/PM Contours ()
REAL ()
E
P49
48.5
48
48.5
49.5
50
50.5
51
47.5
50 58
52 54
60
56
62
64
66
E
P
P
E
16
16.5 17
17.5
18 18.5
19
19.5
20
10.5 31.5 2 2.5
-- 5 . 5
-- 3
-- 3 . 5
-- 4
-- 4 . 5
-- 5
-- 6
IMAGINARY ()
P
E
-- 8
-- 1 0
-- 1 2
-- 1 4
-- 1 6
-- 1 8
-- 2 0
-- 2 2
AFT18H356--24SR6
11
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz
IMAGINARY ()
1.5
142.5
233.5
-- 6
-- 3 . 5
-- 4
-- 4 . 5
-- 5
-- 5 . 5
-- 3
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 13. P3dB Load Pull Output Power Contours (dBm)
REAL ()
IMAGINARY ()
1.5
142.5
233.5
-- 6
-- 3 . 5
-- 4
-- 4 . 5
-- 5
-- 5 . 5
-- 3
Figure 14. P3dB Load Pull Efficiency Contours (%)
REAL ()
IMAGINARY ()
1.5
142.5
233.5
-- 6
-- 3 . 5
-- 4
-- 4 . 5
-- 5
-- 5 . 5
-- 3
IMAGINARY ()
1.5
142.5
233.5
-- 6
-- 3 . 5
-- 4
-- 4 . 5
-- 5
-- 5 . 5
-- 3
Figure 15. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 16. P3dB Load Pull AM/PM Contours ()
REAL ()
E
P
49
49.5
51
48.5
50
50.5
E
P
51.5
52
60
58
56
62
64
66
E
P
56
50 52 54
14.5
14
15 15.5 16 16.5
17
17.5
18
-- 1 6
-- 2 4
-- 2 6
-- 2 2
-- 1 2
-- 1 8
-- 2 0
-- 1 4
E
P
12
RF Device Data
Freescale Semiconductor, Inc.
AFT18H356--24SR6
P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz
IMAGINARY ()
1.5
152.5
233.5
-- 6
-- 1
-- 2
-- 3
-- 4
-- 5
0
44.5
IMAGINARY ()
1.5
152.5
233.5
-- 6
-- 1
-- 2
-- 3
-- 4
-- 5
0
44.5
IMAGINARY ()
1.5
152.5
233.5
-- 6
-- 1
-- 2
-- 3
-- 4
-- 5
0
44.5
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 17. P1dB Load Pull Output Power Contours (dBm)
REAL ()
IMAGINARY ()
1.5
152.5
233.5
-- 6
-- 1
-- 2
-- 3
-- 4
-- 5
0
Figure 18. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 19. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 20. P1dB Load Pull AM/PM Contours ()
REAL ()
44.5
E
P
50.5
51
51.5
52
52.5
53
53.5
54
54.5
58
60
62
64
66
E
P
68
70
72
62
60 64
P
E
12 13.5
13
14
14.5
12.5
15
15.5
14
E
P
-- 2 4
-- 2 6
-- 2 8
-- 3 0
-- 3 2
-- 3 4
-- 3 6
-- 3 8
-- 4 0
AFT18H356--24SR6
13
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz
IMAGINARY ()
1.5
152.5
233.5
-- 5
-- 1 . 5
-- 2
-- 2 . 5
-- 3
-- 3 . 5
-- 1
-- 4
-- 4 . 5
44.5
IMAGINARY ()
1.5
152.5
233.5
-- 5
-- 1 . 5
-- 2
-- 2 . 5
-- 3
-- 3 . 5
-- 1
-- 4
-- 4 . 5
44.5
IMAGINARY ()
1.5
152.5
233.5
-- 5
-- 1 . 5
-- 2
-- 2 . 5
-- 3
-- 3 . 5
-- 1
-- 4
-- 4 . 5
44.5
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 21. P3dB Load Pull Output Power Contours (dBm)
REAL ()
IMAGINARY ()
1.5
152.5
233.5
-- 5
-- 1 . 5
-- 2
-- 2 . 5
-- 3
-- 3 . 5
-- 1
Figure 22. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 23. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 24. P3dB Load Pull AM/PM Contours ()
REAL ()
-- 4
-- 4 . 5
44.5
E
P
51.5
52
52.5
53
53.5
54
54.5
55 60
68
70
E
P62
64
66
72
E
P
E
P
12.5
1212
12
13
13.5
12
11.5
-- 3 2
-- 3 6
-- 3 8
-- 4 2
-- 3 4
-- 4 0
-- 4 4
-- 4 6
-- 4 8
14
RF Device Data
Freescale Semiconductor, Inc.
AFT18H356--24SR6
ALTERNATE CHARACTERIZATION — 1930–1995 MHz
Figure 25. AFT18H356--24SR6 Test Circuit Component Layout — 1930–1995 MHz
CUT OUT AREA
AFT18H356--24S
Rev. 2
D53347
VGGA
C5
C
P
VGGB
VDDA
VDDB
C3 R1
C1
C2
C4
R2
C6
R3
C17
C14 C16
C10
C12
C8
C11
C7
C9
C18
C13
C15
Table 11. AFT18H356--24SR6 Test Circuit Component Designations and Values — 1930–1995 MHz
Part Description Part Number Manufacturer
C1, C2, C3, C4, C7, C9,
C10
18 pF Chip Capacitors GQM2195C2E180FB12D Murata
C5, C6 2.2 F Chip Capacitors C1206C225K4RAC Kemet
C8 12 pF Chip Capacitor ATC100B120JT500XT ATC
C11, C12 0.1 pF Chip Capacitors ATC600F0R1BT250XT ATC
C13, C14 10 F Chip Capacitors C5750X7S2A106M230KB TDK
C15, C16 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
C17, C18 10 F Chip Capacitors GRM32ER61H106KA12L Murata
R1, R2 2.2 , 1/4 W Chip Resistors CRCW12062R20JNEA Vishay
R3 50 Ω, 10 W Chip Resistor 81A7031--50--5F Florida RF Labs
PCB Rogers RO4350B, 0.020,r=3.66 D53347 MTL
AFT18H356--24SR6
15
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 1930–1995 MHz
IRL, INPUT RETURN LOSS (dB)
1880
ACPR
f, FREQUENCY (MHz)
Figure 26. Single--Carrier Output Peak--to--Average Ratio
Compression (PARC) Broadband Performance @ Pout = 63 Watts Avg.
-- 1 7
-- 9
-- 11
-- 1 3
-- 1 5
10
20
19
18
-- 3 2
52
50
48
46
-- 2 7
-- 2 8
-- 2 9
-- 3 0
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
17
16
15
14
13
12
11
1900 1920 1940 1960 1980 2000 2020 2040
44
-- 3 1
-- 1 9
ACPR (dBc)
PARC
IRL
PARC (dB)
-- 3 . 6
-- 2
-- 2 . 4
-- 2 . 8
-- 3 . 2
-- 4
Gps
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
1
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 27. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 2 0
-- 3 0
10
22
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
20
18
10 100 300
10
-- 7 0
ACPR (dBc)
16
14
12
-- 1 0
-- 4 0
-- 5 0
-- 6 0
Figure 28. Broadband Frequency Response
10
16
f, FREQUENCY (MHz)
14
13
12
GAIN (dB)
15
11
1810 1850 1890 1930 1970 2010 2050 2090 2130
-- 3 0
30
20
10
0
-- 1 0
IRL (dB)
-- 2 0
Gain
IRL
1960 MHz
VDD =28Vdc,P
out =63W(Avg.),I
DQA = 950 mA
VGSB = 1.3 Vdc, Single--Carrier W--CDMA
VDD =28Vdc,I
DQA = 950 mA
VGSB = 1.3 Vdc, Single--Carrier
W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB
@ 0.01%= Probability on CCDF
1930 MHz
1995 MHz
Gps
1930 MHz
1995 MHz
1960 MHz
1930 MHz
1960 MHz
1995 MHz
VDD =28Vdc
Pin =0dBm
IDQA = 950 mA
VGSB =1.3Vdc
16
RF Device Data
Freescale Semiconductor, Inc.
AFT18H356--24SR6
Table 12. Carrier Side Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,I
DQA = 775 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1930 1.98 -- j5.37 2.22 + j5.56 1.13 -- j5.10 16.4 51.2 132 53.7 -- 1 0
1960 2.08 -- j5.43 2.59 + j5.75 1.11 -- j5.19 16.2 51.1 129 52.4 -- 1 0
1995 2.42 -- j5.68 3.14 + j5.82 1.10 -- j5.38 16.2 50.9 124 50.1 -- 1 0
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1930 1.98 -- j5.37 2.20 + j5.93 1.10 -- j5.31 14.1 51.9 155 53.4 -- 1 6
1960 2.08 -- j5.43 2.64 + j6.19 1.10 -- j5.49 13.8 51.8 151 51.2 -- 1 5
1995 2.42 -- j5.68 3.29 + j6.34 1.07 -- j5.53 13.9 51.6 146 49.9 -- 1 5
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 13. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD =28Vdc,I
DQA = 775 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1930 1.98 -- j5.37 2.13 + j5.54 2.20 -- j4.31 19.0 49.4 87 61.8 -- 1 3
1960 2.08 -- j5.43 2.43 + j5.74 2.15 -- j4.14 19.1 48.9 78 59.9 -- 1 4
1995 2.42 -- j5.68 2.94 + j5.79 2.15 -- j4.62 18.9 49.1 81 57.3 -- 11
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1930 1.98 -- j5.37 2.14 + j5.88 2.08 -- j4.39 16.8 50.2 105 61.2 -- 1 9
1960 2.08 -- j5.43 2.51 + j6.12 1.91 -- j4.22 16.8 49.9 98 59.4 -- 2 1
1995 2.42 -- j5.68 3.21 + j6.20 2.11 -- j4.65 16.8 50.0 99 57.1 -- 1 7
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
AFT18H356--24SR6
17
RF Device Data
Freescale Semiconductor, Inc.
Table 14. Peaking Side Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,V
GSB =1.4Vdc,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1930 2.34 -- j5.33 3.02 + j6.08 1.58 -- j4.91 13.9 54.5 285 56.8 -- 2 8
1960 3.57 -- j5.40 4.37 + j6.41 1.79 -- j5.19 13.8 54.5 281 55.9 -- 2 7
1995 4.83 -- j4.85 6.83 + j5.71 1.98 -- j5.45 13.8 54.4 276 55.5 -- 2 6
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1930 2.34 -- j5.33 3.31 + j6.32 1.96 -- j5.00 12.1 55.2 330 60.6 -- 3 5
1960 3.57 -- j5.40 4.91 + j6.61 1.98 -- j5.29 11.9 55.2 331 58.7 -- 3 4
1995 4.83 -- j4.85 7.71 + j5.38 2.23 -- j5.91 11.5 55.2 331 55.3 -- 3 1
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 15. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD =28Vdc,V
GSB =1.4Vdc,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1930 2.34 -- j5.33 2.65 + j5.93 1.99 -- j2.55 15.2 51.8 151 71.0 -- 3 5
1960 3.57 -- j5.40 3.82 + j6.34 1.88 -- j2.67 15.1 51.7 147 70.1 -- 3 5
1995 4.83 -- j4.85 6.03 + j5.96 2.00 -- j2.88 15.0 51.8 152 69.7 -- 3 3
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1930 2.34 -- j5.33 3.03 + j6.23 1.97 -- j3.02 13.3 53.0 200 70.7 -- 4 4
1960 3.57 -- j5.40 4.45 + j6.62 1.85 -- j3.07 13.2 52.8 189 69.6 -- 4 4
1995 4.83 -- j4.85 7.11 + j5.78 1.94 -- j3.28 13.1 52.9 196 69.7 -- 4 2
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
18
RF Device Data
Freescale Semiconductor, Inc.
AFT18H356--24SR6
P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1960 MHz
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 29. P1dB Load Pull Output Power Contours (dBm)
REAL ()
IMAGINARY ()
1.5
142.5
233.5
-- 6
-- 3 . 5
-- 4
-- 4 . 5
-- 5
-- 5 . 5
-- 3
Figure 30. P1dB Load Pull Efficiency Contours (%)
REAL ()
IMAGINARY ()
1.5
142.5
233.5
-- 6
-- 3 . 5
-- 4
-- 4 . 5
-- 5
-- 5 . 5
-- 3
IMAGINARY ()
1.5
142.5
233.5
-- 6
-- 3 . 5
-- 4
-- 4 . 5
-- 5
-- 5 . 5
-- 3
Figure 31. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 32. P1dB Load Pull AM/PM Contours ()
REAL ()
IMAGINARY ()
-- 6
-- 3 . 5
-- 4
-- 4 . 5
-- 5
-- 5 . 5
-- 3
E
P
49
48
48.5
49.5
50
50.5
51
47.5
47
50
58
52
54
56
E
P
46 48
46
48
50
16 16.5
17 17.5 18
18.5
19
19.5
20
E
P
10.5 31.5 2 2.5
E
P
-- 1 2
-- 1 6
-- 1 8
-- 1 4
-- 2 0
-- 2 2
-- 1 0
-- 1 0
-- 2 4
-- 2 6
AFT18H356--24SR6
19
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1960 MHz
-- 7
-- 3 . 5
-- 4
-- 4 . 5
-- 5
-- 5 . 5
-- 3
-- 6
-- 6 . 5
-- 7
-- 3 . 5
-- 4
-- 4 . 5
-- 5
-- 5 . 5
-- 3
-- 6
-- 6 . 5
IMAGINARY ()
1.5
152.5
233.544.5
IMAGINARY ()
1.5
152.5
233.544.5
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 33. P3dB Load Pull Output Power Contours (dBm)
REAL ()
IMAGINARY ()
1.5
152.5
233.5
-- 7
-- 3 . 5
-- 4
-- 4 . 5
-- 5
-- 5 . 5
-- 3
Figure 34. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 35. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 36. P3dB Load Pull AM/PM Contours ()
-- 6
-- 6 . 5
44.5
E
P
48.5
48
44
E
P
14
13.5
49
49.5
50
50.5
51
51.5
E
P
14.5 15
15.5 16
16.5
17
17.5
46
48
50
52
54
56
58
10.5 31.5 2 2.5
-- 5 . 5
-- 3
-- 3 . 5
-- 4
-- 4 . 5
-- 5
-- 6
IMAGINARY ()
-- 1 4
-- 1 6
-- 1 8
-- 2 2
-- 2 4
-- 2 6
E
P
-- 2 0
-- 2 8
-- 3 0
REAL ()
20
RF Device Data
Freescale Semiconductor, Inc.
AFT18H356--24SR6
P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1960 MHz
-- 6
-- 1
-- 2
-- 3
-- 4
-- 5
-- 7
1.5152.5
233.5
-- 6
-- 1
-- 2
-- 3
-- 4
-- 5
44.5
-- 7
1.5152.5
233.5
-- 6
-- 1
-- 2
-- 3
-- 4
-- 5
44.5
-- 7
IMAGINARY ()
IMAGINARY ()IMAGINARY ()
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 37. P1dB Load Pull Output Power Contours (dBm)
REAL ()
IMAGINARY ()
1.5152.5
233.5
-- 6
-- 1
-- 2
-- 3
-- 4
-- 5
Figure 38. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 39. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 40. P1dB Load Pull AM/PM Contours ()
REAL ()
44.5
-- 7
E
P
50.5 51
51.5
52
52.5
53
53.5
54
54
56
P
E
13.5
14
14.5
15
53.5
53
E
P
58
60
62
64
66
68
54
56
11.5 12 12.5 13
13.5 14
-- 2 4
-- 2 2
1.5152.5
23 3.5 4 4.5
P
E
-- 2 6
-- 2 8
-- 3 0
-- 3 2
-- 3 4
-- 3 6
-- 3 8
AFT18H356--24SR6
21
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1960 MHz
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 41. P3dB Load Pull Output Power Contours (dBm)
REAL ()
IMAGINARY ()
1.5
142.5
233.5
-- 6
-- 2
-- 3
-- 4
-- 5
-- 1
Figure 42. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 43. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 44. P3dB Load Pull AM/PM Contours ()
REAL ()
IMAGINARY ()
1.5
142.5
233.5
-- 6
-- 2
-- 3
-- 4
-- 5
-- 1
IMAGINARY ()
1.5
142.5
233.5
-- 6
-- 2
-- 3
-- 4
-- 5
-- 1
IMAGINARY ()
1.5
142.5
233.5
-- 6
-- 2
-- 3
-- 4
-- 5
-- 1
E
51 51.5
P
52
52.5
53
53.5
54
54.5
55 60
58
56
62
64
66
54
E
P
68
56
54
11.5
11
P
E
P
E
12
12.5
13
11 11.5 12
-- 3 4
-- 3 6
-- 4 0
-- 3 2
-- 3 8
-- 3 0
-- 4 2
-- 4 4
-- 4 6 -- 3 0
22
RF Device Data
Freescale Semiconductor, Inc.
AFT18H356--24SR6
PACKAGE DIMENSIONS
AFT18H356--24SR6
23
RF Device Data
Freescale Semiconductor, Inc.
24
RF Device Data
Freescale Semiconductor, Inc.
AFT18H356--24SR6
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to
Software & Tools on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
1Mar. 2015 Initial Release of Data Sheet
AFT18H356--24SR6
25
RF Device Data
Freescale Semiconductor, Inc.
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Document Number: AFT18H356--24S
Rev. 1, 3/2015
