CSTLF4M00G58C-B0 - MURATA MANUFACTURING

TLP160G

2010-10-01

TOSHIBA Photocoupler GaAs Ired & Photo-Triac

TLP160G

Triac Drive

Programmable Controllers

AC−Output Module

Solid State Relay

The TOSHIBA mini flat coupler TLP160G is a small outline coupler,

suitable for surface mount assembly.

The TLP160G consists of a photo triac, optically coupled to a gallium

arsenide infrared emitting diode.

• Peak off-state voltage: 400 V (min.)

• Trigger LED current: 10 mA (max.)

• On−state current: 70 mA (max.)

• Isolation voltage: 2500 Vrms (min.)

• UL recognized: UL1577, file No. E67349

Trigger LED Current

*Ex. (IFT5); TLP160G (IFT5)

(Note) Application type name for certification test, please

use standard product type name, i.e.

TLP160G(IFT5): TLP160G

Unit in mm

TOSHIBA 11−4C3

Weight: 0.09 g (typ.)

Trigger LED Current (mA)

VT=3V, Ta=25°C

Classi−

fication* Min. Max.

Marking of

Classification

(IFT5) ― 5 T5

(IFT7) ― 7 T5, T7

Standard ― 10 T5, T7, blank

Pin Configurations

1. Anode

3. Cathode

4. Terminal 1

6. Terminal 2

TLP160G

2010-10-01

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Forward current IF 50 mA

Forward current derating (Ta ≥ 53°C) ΔIF / °C −0.7 mA / °C

Peak forward current (100μs pulse, 100 pps) IFP 1 A

Reverse voltage VR 5 V

LED

Junction temperature Tj 125 °C

Off− state output terminal voltage VDRM 400 V

Ta=25°C 70

On−state RMS current

Ta=70°C

IT(RMS)

On−state current derating (Ta ≥ 25°C) ΔIT / °C −0.67 mA / °C

Peak on−state current (100μs pulse, 120 pps) ITP 2 A

Peak nonrepetitive surge current

(PW=10ms) ITSM 1.2 A

Detector

Junction temperature Tj 115 °C

Storage temperature range Tstg −55 to 125 °C

Operating temperature range Topr −40 to 100 °C

Lead soldering temperature (10s) Tsol 260 °C

Isolation voltage (AC, 1 min., R.H. ≤ 60%) (Note) BVS 2500 Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(Note) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4

and 6 shorted together.

Recommended Operating Conditions

Characteristics Symbol Min. Typ. Max. Unit

Supply voltage VAC ― ― 120 Vac

Forward current IF 15 20 25 mA

Peak on−state current ITP ― ― 1 A

Operating temperature Topr −25 ― 85 °C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.

TLP160G

2010-10-01

Individual Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF I

F=10mA 1.0 1.15 1.3 V

Reverse current IR V

R=5V ― ― 10 μA

LED

Capacitance CT V=0, f=1MHz ― 30 ― pF

Peak off−state current IDRM V

DRM=400V ― 10 1000 nA

Peak on−state voltage VTM I

TM=70mA ― 1.7 2.8 V

Holding current IH ― ― 0.6 ― mA

Critical rate of rise

of off−state voltage dv / dt Vin=120Vrms, Ta=85°C (Fig.1) 200 500 ― V / μs

Detector

Critical rate of rise

of commutating voltage dv / dt(c) IT=15mA, Vin=30Vrms (Fig.1) ― 0.2 ― V / μs

Coupled Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min. Typ. Max. Unit

Trigger LED current IFT V

T=3V ― 5 10 mA

Capacitance input to output Cs V

S=0, f=1MHz ― 0.8 ― pF

Isolation resistance RS V

S=500V, R.H. ≤ 60% 1×1012 1014 ― Ω

AC, 1 minute 2500 ― ―

AC, 1 second, in oil ― 5000 ―

Vrms

Isolation voltage BVS

DC, 1 minute, in oil ― 5000 ― Vdc

Turn−on time tON VD=6→4V, RL = 100Ω

IF=rated IFT×1.5 ― 30 100 μs

Fig.1 dv / dt Test Circuit

1 6

3 4

～

5V，VCC

Vin

2kΩdv / dt (c)

VCC +

－

dv / dt

Rin

120Ω

TLP160G

2010-10-01

ΔVF / ΔTa - I F

Forward current IF (mA)

Forward voltage temperature

coefficient ΔVF / ΔTa (mV / °C)

－3.2

－0.4

0.1

－2.0

－1.6

－1.2

－0.8

0.5 1 3 5 10 30 50

－2.4

0.3

－2.8

IFP – DR

Duty cycle ratio DR

Allowable pulse forward

current IFP (mA)

3000

1000

100

10－3 3 10－2 3 10－1 3 100

Pulse width ≤ 100μs

Ta = 25°C

500

IF – VF

Forward voltage VF (V)

Forward current IF (mA)

100

0.1

0.6

0.3

0.8 1.0 1.2 1.4 1.6 1.8

Ta = 25°C

0.5

Allowable forward current

F (mA)

IF – Ta

120

－20

0 20

40 80 100

Ambient temperature Ta (°C)

IT(RMS) – Ta

Ambient temperature Ta (°C)

R.m.s. on-state current

IT(RMS) (mA)

120

－20

100

0 40 80 100

120

IFP – VFP

Pulse forward voltage VFP (V)

Pulse forward current

FP (mA)

1000

0.6 1.0 2.2 2.6 3.0

500

100

1.4 1.8

300

5Pulse width ≦ 10 μs

Repetitive frequency

= 100 Hz

Ta = 25°C

TLP160G

2010-10-01

Off-state output terminal voltage

VDRM(arbitrary unit)

Normalized VDRM – Ta

Ambient temperature Ta (°C)

100

1.4

－40

0.8

0.4

－20 0 80 40

0.2

1.0

1.2

0.6

20 60

Normalized LED Current

－LED Current Pulse Width

Ambient temperature Ta (°C)

Trigger LED current IFT

(arbitrary unit)

Normalized IFT – Ta

100

－40

0.5

0.3

－20 0 20 60 80

0.1

1.2

VT＝3V

Ambient temperature Ta (°C)

Normalized IH – Ta

Holding current IH

(arbitray unit)

100

－40

0.5

0.3

－20 0 20 60 80

0.1

1.2

Normalized IDRM – Ta

Peak off-state current IDRM

(Arbitrary unit)

Ambient temperature Ta (°C)

100

103

101

100

20 40 80 60

102

VDRM=Rated

Normalized LED current

IF / IFT

LED current pulse width Pw (μs)

1.8

1.4

1.6

50 100 300 500 1000

1.2

TLP160G

2010-10-01

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively “Product”) without notice.

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TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the

Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of

all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes

for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the

instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their

own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such

design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,

diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating

parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR

APPLICATIONS.

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• GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or

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