TLP160G
2010-10-01
1
TOSHIBA Photocoupler GaAs Ired & Photo-Triac
TLP160G
Triac Drive
Programmable Controllers
ACOutput Module
Solid State Relay
The TOSHIBA mini flat coupler TLP160G is a small outline coupler,
suitable for surface mount assembly.
The TLP160G consists of a photo triac, optically coupled to a gallium
arsenide infrared emitting diode.
Peak off-state voltage: 400 V (min.)
Trigger LED current: 10 mA (max.)
Onstate current: 70 mA (max.)
Isolation voltage: 2500 Vrms (min.)
UL recognized: UL1577, file No. E67349
Trigger LED Current
*Ex. (IFT5); TLP160G (IFT5)
(Note) Application type name for certification test, please
use standard product type name, i.e.
TLP160G(IFT5): TLP160G
Unit in mm
TOSHIBA 114C3
Weight: 0.09 g (typ.)
Trigger LED Current (mA)
VT=3V, Ta=25°C
Classi
fication* Min. Max.
Marking of
Classification
(IFT5) 5 T5
(IFT7) 7 T5, T7
Standard 10 T5, T7, blank
Pin Configurations
1. Anode
3. Cathode
4. Terminal 1
6. Terminal 2
1
3
6
4
TLP160G
2010-10-01
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Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Forward current IF 50 mA
Forward current derating (Ta 53°C) ΔIF / °C 0.7 mA / °C
Peak forward current (100μs pulse, 100 pps) IFP 1 A
Reverse voltage VR 5 V
LED
Junction temperature Tj 125 °C
Off state output terminal voltage VDRM 400 V
Ta=25°C 70
Onstate RMS current
Ta=70°C
IT(RMS)
40
mA
Onstate current derating (Ta 25°C) ΔIT / °C 0.67 mA / °C
Peak onstate current (100μs pulse, 120 pps) ITP 2 A
Peak nonrepetitive surge current
(PW=10ms) ITSM 1.2 A
Detector
Junction temperature Tj 115 °C
Storage temperature range Tstg 55 to 125 °C
Operating temperature range Topr 40 to 100 °C
Lead soldering temperature (10s) Tsol 260 °C
Isolation voltage (AC, 1 min., R.H. 60%) (Note) BVS 2500 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4
and 6 shorted together.
Recommended Operating Conditions
Characteristics Symbol Min. Typ. Max. Unit
Supply voltage VAC 120 Vac
Forward current IF 15 20 25 mA
Peak onstate current ITP 1 A
Operating temperature Topr 25 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP160G
2010-10-01
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Individual Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF I
F=10mA 1.0 1.15 1.3 V
Reverse current IR V
R=5V 10 μA
LED
Capacitance CT V=0, f=1MHz 30 pF
Peak offstate current IDRM V
DRM=400V 10 1000 nA
Peak onstate voltage VTM I
TM=70mA 1.7 2.8 V
Holding current IH 0.6 mA
Critical rate of rise
of offstate voltage dv / dt Vin=120Vrms, Ta=85°C (Fig.1) 200 500 V / μs
Detector
Critical rate of rise
of commutating voltage dv / dt(c) IT=15mA, Vin=30Vrms (Fig.1) 0.2 V / μs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min. Typ. Max. Unit
Trigger LED current IFT V
T=3V 5 10 mA
Capacitance input to output Cs V
S=0, f=1MHz 0.8 pF
Isolation resistance RS V
S=500V, R.H. 60% 1×1012 1014
AC, 1 minute 2500
AC, 1 second, in oil 5000
Vrms
Isolation voltage BVS
DC, 1 minute, in oil 5000 Vdc
Turnon time tON VD=64V, RL = 100
IF=rated IFT×1.5 30 100 μs
Fig.1 dv / dt Test Circuit
1 6
3 4
5VVCC
0V
Vin
RL
2kΩdv / dt (c)
VCC +
dv / dt
Rin
120Ω
TLP160G
2010-10-01
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ΔVF / ΔTa - I F
Forward current IF (mA)
Forward voltage temperature
coefficient ΔVF / ΔTa (mV / °C)
3.2
0.4
0.1
2.0
1.6
1.2
0.8
0.5 1 3 5 10 30 50
2.4
0.3
2.8
IFP – DR
Duty cycle ratio DR
Allowable pulse forward
current IFP (mA)
3000
10
1000
100
103 3 102 3 101 3 100
Pulse width 100μs
Ta = 25°C
500
50
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.1
0.6
30
10
3
1
0.3
0.8 1.0 1.2 1.4 1.6 1.8
Ta = 25°C
50
5
0.5
Allowable forward current
I
F (mA)
IF – Ta
120
60
20
10
50
40
30
20
0 20
40 80 100
60
0
Ambient temperature Ta (°C)
IT(RMS) – Ta
Ambient temperature Ta (°C)
R.m.s. on-state current
IT(RMS) (mA)
120
20
0
100
80
60
20
0 40 80 100
120
60
20
40
IFP – VFP
Pulse forward voltage VFP (V)
Pulse forward current
I
FP (mA)
1000
1
0.6 1.0 2.2 2.6 3.0
500
100
50
10
3
1.4 1.8
300
30
5Pulse width 10 μs
Repetitive frequency
= 100 Hz
Ta = 25°C
TLP160G
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Off-state output terminal voltage
VDRM(arbitrary unit)
Normalized VDRM – Ta
Ambient temperature Ta (°C)
100
1.4
40
0.8
0.4
20 0 80 40
0.2
1.0
1.2
0.6
20 60
Normalized LED Current
LED Current Pulse Width
Ambient temperature Ta (°C)
Trigger LED current IFT
(arbitrary unit)
Normalized IFT – Ta
100
3
40
2
1
0.5
0.3
20 0 20 60 80
40
0.1
1.2
VT3V
Ambient temperature Ta (°C)
Normalized IH – Ta
Holding current IH
(arbitray unit)
100
3
40
2
1
0.5
0.3
20 0 20 60 80
40
0.1
1.2
Normalized IDRM – Ta
Peak off-state current IDRM
(Arbitrary unit)
Ambient temperature Ta (°C)
100
103
0
101
100
20 40 80 60
102
VDRM=Rated
Normalized LED current
IF / IFT
LED current pulse width Pw (μs)
1.8
1.4
10
10
3
1.6
2
1
50 100 300 500 1000
5
30
1.2
TLP160G
2010-10-01
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