VTB Process Photodiodes VTB100H PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue response. RoHS Compliant CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40C to 100C -40C to 100C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTB curves, pages 21-22) SYMBOL CHARACTERISTIC VTB100H TEST CONDITIONS Min. ISC TC ISC VOC TC VOC ID RSH UNITS Max. Short Circuit Current H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K Open Circuit Voltage H = 100 fc, 2850 K 490 mV VOC Temperature Coefficient 2850 K -2.0 mV/C Dark Current H = 0, VR = 10 V 50 Shunt Resistance H = 0, V = 10 mV 1.4 -8.0 RSH Temperature Coefficient H = 0, V = 10 mV CJ Junction Capacitance H = 0, V = 0 SR Sensitivity 365 nm TC R SH range Spectral Application Range 50 Typ. 65 .12 A .23 500 pA G %/C 2.0 .1 320 %/C nF A/W 1100 nm p Spectral Response - Peak VBR Breakdown Voltage 1/2 Angular Resp. - 50% Resp. Pt. 70 Degrees NEP Noise Equivalent Power 2.6 x 10-14 (Typ.) Specific Detectivity 1.05 x 10 13 (Typ.) W Hz cm Hz W D* PerkinElmer Optoelectronics 22001 Dumberry, Vaudreuil, Canada J7V 8P7 30 920 nm 40 V Phone: 877-734-6786 Fax: 450-424-3413 23 www.perkinelmer.com/opto