InSb Hall Element HW-300A Please be aware that AKE products are not intended for use in life support equipment, devices, or systems. Use of AKE products in such applications requires the advance written approval of the appropriate AKE officer. Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of AKE products in such applications is understood to be fully at the risk of the customer using AKE devices or systems. *High-sensitivity InSb Hall element. *DIP package. *Shipped in bulk (500pcs per pack). Note : It is requested to read and accept "IMPORTANT NOTICE". *Absolute Maximum Ratings Item Symbol Limit Unit Max. Input Current Ic 20 mA Operating Temp. Range Topr. -40 to +110 C Storage Temp. Range Tstg. -40 to +125 C Const. Current Drive *Classification of Output Hall Voltage (VH) VH [ mV ] Rank *Electrical Characteristics(Ta=25C) Symbol Item Output Hall Voltage Input Resistance VH Rin Conditions Const. Voltage Drive B=50mT, Vc=IV B=0mT, Ic=0.1mA Min. Typ. 122 Max. Unit 320 240 mV 550 Conditions A 122 to 150 B 144 to 174 C 168 to 204 D 196 to 236 E 228 to 274 F 266 to 320 B=50mT, Vc=IV Constant Voltage Drive Note : When ordering, specify 3-rank or wider range(e*g*,BCD). Output Resistance Rout B=0mT, Ic=0.1mA Offset Voltage Vos B=0mT, Vc=IV 240 550 -7 +7 *Input Current Derating Curve mV Input Resistance Temp. Coefficient of Rin VH B=50mT, Ic=5mA -1.8 %/C Rin B=0mT, Ic=0.1mA -1.8 %/C Dielectric Strength 100V D.C 1.0 Input Current(mA) 20 Temp. Coefficient of VH M Rin : 240 to 550 10 Notes : 1. VH = VHM - Vos (VHM:meter indication) 1 3) - VH (T2) X 100 2. VH = VH (T1) X VH (T (T3 - T2) 1 Rin (T3) - Rin (T2) X 100 3. Rin = Rin (T1) X (T - T ) 3 0 2 - 40 T1 = 20C, T2 = 0C, T3 = 40C 0 20 40 60 100 120 Note : Rin of Hall element decreases rapidly as ambient temperature increases. Ensure compliance with input current derating curve envelope, throughout the operating temperature range. 2.40.1 1.5 0.4 2 *Input Voltage Derating Curve Input Resistance 0.7 7.0 80 Ambient Temperature.(C) *Dimensional Drawing (mm) 1 - 20 2.0 Rin : 240 to 550 Input Voltage(V) N 2.90.1 0.4 7.0 0.4 0.75 8 5 4 3 Pinning 1.15 0.15 0 - 40 8 1.70.1 () Output 1() 2 - 20 0 20 40 60 80 100 120 Ambient Temperature.(C) () Input 0.55 1.0 3 Note : For constant-voltage drive, stay within this input voltage derating curve envelope. 4() 5 23 HW-300A a *Characteristic Curves Rin-T VH-B 2000 600.0 Ic const Vc const 500.0 1600 Output Voltage:VH(mV) Input Resistance:Rin( ) 1800 1400 1200 1000 800 600 400 Ic = 5 (mA) Vc = 1 (V) Ta = 25 (C) 400.0 Ic 300.0 Vin 200.0 100.0 200 0 -50 0 50 100 0.0 0 150 10 20 Ambient Temperature(C) 30 40 50 Magnetic Flux Density B (mT) e VH-T VH-Vc, VH-Ic 2000 1200 Output Voltage:VH(mV) 1750 Ic = 5 (mA) Vc = 1 (V) B = 50 (mT) 1500 Ic 1250 Output Voltage:VH(mV) Ic const Vc const 1000 750 500 250 Vin Ic const Vc const 1000 Ic B = 50 (mT) Ta = 25 (C) 800 f 600 Vin 400 200 0 -50 0 50 100 0 0.0 150 5 10 15 20 Ic:(mA) 0.5 1.0 1.5 2.0 Vc:(V) Ic (mA) Input Current Vc (V) Input Voltage Ambient Temperature(C) VOS-T VOS-Vc, VOS-Ic 40 20 30 Ic = 5 (mA) Vc = 1 (V) B = 0 (mT) Ic Ic const Vc const 18 Offset Voltage:Vos(mV) Offset Voltage:Vos(mV) Ic const Vc const 20 10 16 i Ic B = 0 (mT) Ta = 25 (C) 14 12 10 8 Vin 6 4 Vin 2 0 -50 0 50 100 0 0.0 150 Ambient Temperature(C) 5 10 15 0.5 1.0 1.5 Ic (mA) Input Current Vc (V) Input Voltage *Magnetic Flux Density 1(mT)=10(G) In This Example : Rin=350( ), Vos=4.7(mV), Vc=1(V) 24 20 Ic:(mA) 2.0 Vc:(V)