InSb Hall Element
•Absolute Maximum Ratings
•Electrical Characteristics(Ta=25˚C)
•Dimensional Drawing (mm)
•Classification of Output Hall Voltage (VH)
Input Voltage(V) Input Current(mA)
23
Note : When ordering, specify 3-rank or wider range(e·g·,BCD).
•Input Current Derating Curve
•Input Voltage Derating Curve
Note : For constant-voltage drive, stay within this input voltage derating
curve envelope.
Note : Rin of Hall element decreases rapidly as ambient temperature
increases. Ensure compliance with input current derating curve envelope,
throughout the operating temperature range.
20
10
–40 –20 0 20 40 60 80 100 120
Input Resistance
Rin : 240 to 550
2.0
1.0
–40 –20 0 20 40 60 80 100 120
0
Ambient Temperature.(˚C)
0
Ambient Temperature.(˚C)
HW-300A
•High-sensitivity InSb Hall element.
•DIP package.
•Shipped in bulk (500pcs per pack).
Item
Symbol
Topr.
Tstg.
Ic
Const. Current Drive
Limit
20
–40 to +125
–40 to +110
Unit
mA
˚C
˚C
Pinning
Conditions
VH [ mV ]
Rank
B=50mT, Vc=IV
Constant Voltage Drive
Max. Input Current
Operating Temp. Range
Storage Temp. Range
Dielectric Strength
Output Hall Voltage
Input Resistance
Output Resistance
Offset Voltage
Temp. Coefficient of VH
Temp. Coefficient of Rin
Item
100V D.C
Const. Voltage Drive
B=50mT, Vc=IV
B=0mT, Ic=0.1mA
B=0mT, Ic=0.1mA
B=0mT, Vc=IV
B=50mT, Ic=5mA
B=0mT, Ic=0.1mA
Conditions
1.0
122
240
240
–7
Min.
mV
mV
%/˚C
%/˚C
Unit
–1.8
–1.8
Typ.
550
320
550
+7
Max.
1(±) 3
(±)
Input
4(±)
2
(±)
Output
A 122 to 150
B 144 to 174
C 168 to 204
D 196 to 236
F 266 to 320
E 228 to 274
Input Resistance
Rin : 240 to 550
1.7±0.1 1.15
0.55
5˚
8˚
8˚
5˚
0.4 0.75 2.9±0.1
7.0 7.0
0.15
0.4
0.7
0.4
1.5 2.4±0.1
4 3
21
N
M
VH
Rin
Rout
Vos
VH
Rin
Symbol
Notes : 1. VH = VHM – Vos (VHM:meter indication)
2. VH = X X 100
3. Rin = X X 100
Rin (T1)
1(T3 – T2)
VH (T3) – VH (T2)
(T3 – T2)
Rin (T3) – Rin (T2)
VH (T1)
1
T1 = 20˚C, T2 = 0˚C, T3 = 40˚C
Note : It is requested to read and accept "IMPORTANT NOTICE".
Please be aware that AKE products are not intended for use in life
support equipment, devices, or systems. Use of AKE products in such
applications requires the advance written approval of the appropriate
AKE officer.
Certain applications using semiconductor devices may involve potential
risks of personal injury, property damage, or loss of life. In order to
minimize these risks, adequate design and operating safeguards
should be provided by the customer to minimize inherent or procedural
hazards. Inclusion of AKE products in such applications is understood to
be fully at the risk of the customer using AKE devices or systems.
24
•Characteristic Curves
2000
1800
1600
1400
1200
1000
800
600
400
200
0
-50 0 50 100 150
–50 0 50 100 150
2000
1750
1500
1250
1000
750
500
250
0
Ic
Vin
–50 0 50 100 150
40
30
20
10
0
Ic
Vin
600.0
500.0
400.0
300.0
200.0
100.0
0.0
0 10 20 30 40 50
Ic
Vin
1200
1000
800
600
400
200
0
0.0 0.5 1.0 1.5 2.0
20
Ic
Vin
20
18
16
14
12
10
8
6
4
2
00.0 0.5 1.0 1.5 2.0
5 10 15 20
Ic
Vin
5 10 15
a
e
f
i
VH-B
VH-Vc, VH-Ic
VH-T
VOS-Vc, VOS-Ic
VOS-T
*Magnetic Flux Density
1(mT)=10(G)
Rin-T
Ambient Temperature(˚C) Magnetic Flux Density B (mT)
Ambient Temperature(˚C)
Ambient Temperature(˚C)
Output Voltage:VH(mV)Offset Voltage:Vos(mV)
Ic (mA) Input Current
Vc (V) Input Voltage
Ic (mA) Input Current
Vc (V) Input Voltage
Ic:(mA)
Vc:(V)
Ic:(mA)
V
c
:(V)
B = 50 (mT)
Ta = 25 (˚C)
Ic const
Vc const
B = 0 (mT)
Ta = 25 (˚C)
Ic const
Vc const
Output Voltage:VH(mV)Output Voltage:VH(mV)Offset Voltage:Vos(mV)
Ic const
Vc const
Ic = 5 (mA)
Vc = 1 (V)
B =50 (mT)
Ic = 5 (mA)
Vc = 1 (V)
B = 0 (mT)
Ic const
Vc const
Ic = 5 (mA)
Vc = 1 (V)
Ta = 25 (˚C)
Ic const
Vc const
HW-300A
Input Resistance:Rin( )
In This Example : Rin=350( ), Vos=4.7(mV), Vc=1(V)
