FDG6331L - ON SEMICONDUCTOR

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2001 Fairchild Semiconductor Corporation FDG6331L Rev B11 (W)

FDG6331L

Integrated Load Sw itch

General Description

This device is particularly suited for compact power

management in portable electronic equipment where

2.5V to 8V input and 0.8A output current capability are

needed. This load switch integrates a sm all N-Channel

power MOSFET (Q1) that drives a large P-Channel

power MOSFET (Q2) in one tiny S C70-6 package.

Applications

• Power managem ent

• Load switch

Features

• –0.8 A, –8 V . RDS(ON) = 260 mΩ @ VGS = –4.5 V

RDS(ON) = 330 m Ω @ V GS = –2.5 V

RDS(ON) = 450 m Ω @ VGS = –1.8 V

• Control MOSFE T (Q1) i ncludes Zener protec tion for

ESD ruggedness (>6KV Hum an body model)

• High performance trench t echnology for extremel y

low RDS(ON)

• Compac t industry standard SC70-6 surfac e mount

package

Pin 1

SC70-6

Vout,C1

Vin,R1

ON/OFF

R1,C1

See Application Circuit

Equivalent Circuit

DROP

+–

IN OU

ON/OFF

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VIN Gate-Source Voltage (Q2) ± 8 V

VON/OFF Gate-Source Voltage (Q1) –0.5 to 8 V

ILoad Load Current – Continuous (Note 2) 0.8 A

– Pulsed (Note 2) 2.4

PD Maximum Power Dissipat i o n (Note 1) 0.3 W

TJ, TSTG Operating and St orage Junction Temperature Range –55 to +150 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 415 °C/W

Package Marking and Ordering Information

Device Marki ng Device Reel Siz e Tape width Quantity

.31 FDG6331L 7’’ 8mm 3000 units

FDG6331L

November 2014

FDG6331L Rev B1 (W)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVIN Vin Breakdown Voltage VON/OFF = 0 V, I D = –250 µA 8 V

ILoad Zero Gate Volt age Drai n Current VIN = –6.4 V, VON/OFF = 0 V –1 µA

IFL Leakage Current, Forward VON/OFF = 0 V, VIN = 8 V 100 nA

IRL Leakage Current, Reverse VON/OFF = 0 V, VIN = –8 V –100 nA

On Characteristics (Note 2)

VON/OFF (th) Gate Threshold V ol t age VIN = VON/OFF, ID = –250 µA 0.4 0.9 1.5 V

RDS(on) Static Drain–Source

On–Resistance (Q2) VIN = 4.5 V, ID = –0.8 A

VIN =2.5 V, ID = –0.7 A

VIN = 1.8 V, ID = –0.6 A

155

193

248

260

330

450

mΩ

RDS(on) Static Drain–Source

On–Resistance (Q1) VIN = 4.5 V, ID = 0.4A

VIN = 2.7 V, ID = 0.2 A 310

380 400

500 mΩ

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Cont i nuous Drain–Source Diode Forward Current –0.25 A

VSD Drain–Source Di ode Forward

Voltage VON/OFF = 0 V, IS = –0.25 A(Note 2) –1.2 V

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJC is guaranteed by design whil e RθJA is determined by the user’s board design.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDG6331L Load Switch Application Circuit

IN OUT

ON/OFF LOAD

External Component Recommendation:

For additional i n-rush current cont rol , R2 and C1 can be added. For m ore i nf ormation, see applicati on not e AN1030.

FDG6331L

FDG6331L Rev B1 (W)

Typical Characteristics

0.2

0.4

0.6

0.8

0 0.4 0.8 1.2 1.6 2 2.4

-IL, (A)

-V

DROP

, (V)

TJ = 25OC

TJ = 125OC

VIN = -1.8V

VON/OFF = -1.5-8V

PW = 300us, D < 2%

0.2

0.4

0.6

0.8

0 0.4 0.8 1.2 1.6 2 2.4

-IL, (A)

-V

DROP

, (V)

TJ = 25OC

TJ = 125OC

VIN = -2.5V

VON/OFF = -1.5-8V

PW = 300us, D < 2%

Figure 1. Conduction Voltage Drop

Variation with Load Current. Figure 2. Conduction Voltage Drop

Variation with Load Current.

0.2

0.4

0.6

0.8

0 0.4 0.8 1.2 1.6 2 2.4

-IL, (A)

-V

DROP

, (V)

VIN = -4.5V

VON/OFF = -1.5-8V

PW = 300us, D < 2%

TJ = 125OC

TJ = 25OC

0.1

0.2

0.3

0.4

0.5

0.6

1.25 2 2.75 3.5 4.25 5

-VIN, INPUT VOLTAGE (V)

DS(ON)

, ON-RESIST ANCE (Ω)

TJ = 25OC

TJ = 125OC

IL = -1A

VON/OFF = 1.5 - 8V

PW = 300us, D < 2%

Figure 3. Conduction Voltage Drop

Variation with Load Current. Figure 4. On-Resistance Variation

With Input Voltage

FDG6331L

Dimensional Outline and Pad Layout

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FDG6331L

FDG6331L Rev B1 (W)

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FDG6331L

FDG6331L Rev B1 (W)

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

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