MITSUBISHI INTELLIGENT POWER MODULES PM200DVA120 FLAT-BASE TYPE INSULATED PACKAGE T - 4 TYP. A D X (2 PLACES) H J F B E V U R Q S NUTS - 3 TYP. Q K C K P W SQ. PIN (10 PLACES) N G M K TERMINAL CODE 1. VP1 1. VN1 2. SNR 2. SPR 3. CN1 3. CP1 4. VNC 4. VPC 5. FNO 5. FPO L Y CN1 VNC VN1 FNO SNR CI VPC SR SPR CI RFO IN CP1 RFO IN FO GND VP1 FPO SR FO Features: u Complete Output Power Circuit GND VCC SENS OUT 1 SINK OUT 2 TEMP VCC SENS OUT 1 SINK OUT 2 TEMP RREF AMP u Gate Drive Circuit AMP u Protection Logic - Short Circuit - Over Temperature - Under Voltage RG RG TH E2 C2E1 C1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.72 120.0 N 0.12 3.0 B 2.76 70.0 P 1.50 38.0 C 1.14 +0.04/-0.02 29.0 +1.0/-0.5 Q 0.98 25.0 D 4.170.010 106.00.25 R 0.37 9.3 E 2.200.010 56.00.25 S M6 Metric M6 F 1.52 38.5 T 0.26 Dia. Dia. 6.5 G 0.16 4.0 U 0.72 H 0.16 4.01 V 0.10 2.54 18.3 J 0.40 10.16 W 0.025 SQ 0.64 SQ K 0.55 14.0 X 0.14 Dia. 3.5 Dia. Y 1.10 L 1.02 26.0 M 0.45 11.5 Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. Applications: u Inverters u UPS u Motion/Servo Control u Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM200DVA120 is a 1200V, 200 Ampere Intelligent Power Module. Type PM Current Rating Amperes VCES Volts (x 10) 200 120 28.0 Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM200DVA120 FLAT-BASE TYPE INSULATED PACKAGE Absolute Maximum Ratings, Tj = 25C unless otherwise specified Symbol Ratings Units Tj -20 to 150 C Storage Temperature Tstg -40 to 125 C Case Operating Temperature TC -20 to 100 C Mounting Torque, M6 Mounting Screws -- 3.92 ~ 5.88 N*m Mounting Torque, M6 Main Terminal Screws -- 3.92 ~ 5.88 N*m Power Device Junction Temperature Module Weight (Typical) -- 510 Grams Supply Voltage (Applied between C1-E2) VCC(surge) 1000 Volts Supply Voltage Protected by SC (V D = 13.5 ~16.5V, Inverter Part, Tj = 125C Start) VCC(prot.) 800 Volts Viso 2500 Vrms VD 20 Volts Input Voltage (Applied between CP1-VPC, VN1 -VNC) VCIN 20 Volts Fault Output Supply Voltage (Applied between FPO-VPC, FNO-VNC) VFO 20 Volts I FO 20 mA VCES 1200 Volts IC 200 Amperes Peak Collector Current, (TC = 25C) I CP 400 Amperes Collector Dissipation (T C = 25C) PC 962 Watts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Control Sector Supply Voltage (Applied between VP1-VPC, VN1-VNC) Fault Output Current (Sink Current at FPO, FNO Terminal) IGBT Inverter Sector Collector-Emitter Voltage (VD = 15V, VCIN = 5V) Collector Current, (TC = 25C) Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM200DVA120 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units SC -20C Tj 125C, VD = 15V 240 -- -- Amperes toff(SC) VD = 15V -- 10 -- s Control Sector Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection OT Trip Level 100 110 120 C (VD = 15V, Lower Arm) OTr Reset Level 85 95 105 C Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts (-20C Tj 125C) UVr Reset Level -- 12.5 -- Volts ID VD = 15V, VCIN = 5V, VN1-VNC -- 37 48 mA VD = 15V, VCIN = 5V, VP1-VPC -- 37 48 mA Circuit Current Input ON Threshold Voltage Vth(on) Applied between 1.2 1.5 1.8 Volts Input OFF Threshold Voltage Vth(off) CP1-VPC, C N1-VNC 1.7 2.0 2.3 Volts Fault Output Current I FO(H) VD = 15V, VFO = 15V -- -- 0.01 mA IFO(L) VD = 15V, VFO = 15V -- 10 15 mA Minimum Fault Output Pulse Width SXR Terminal Output Voltage t FO VD = 15V 1.0 1.8 -- ms VSXR Tj 125C, Rin = 6.8k (S PR, SNR) 4.5 5.1 5.6 Volts Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM200DVA120 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units VCE = VCES, VD = 15V, Tj = 25C -- VCE = VCES, VD = 15V, Tj = 125C -- -- 1.0 mA -- 10.0 mA IGBT Inverter Sector Collector-Emitter Cutoff Current ICES FWDi Forward Voltage Collector-Emitter Saturation Voltage VEC -IC = 200A, VD = 15V, VCIN = 5V -- 2.50 3.50 Volts VCE(sat) VD = 15V, VCIN = 0V, I C = 200A, -- 2.65 3.30 Volts -- 2.60 3.25 Volts 0.4 0.9 2.3 s Pulsed, Tj = 25C VD = 15V, VCIN = 0V, I C = 200A, Pulsed, Tj = 125C Inductive Load Switching Times t on t rr VD = 15V, VCIN = 0V 5V -- 0.2 0.3 s t C(on) VCC = 600V, IC = 200A, -- 0.4 1.0 s t off Tj = 125C -- 2.4 3.4 s -- 0.7 1.2 s t C(off) Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance Rth(j-c)Q Each Inverter IGBT -- -- 0.11 C/Watt Contact Thermal Resistance Rth(j-c)F Each Inverter FWDi -- -- 0.18 C/Watt Rth(c-f) Case to Fin Per Module, -- -- 0.081 C/Watt Value Units 800 Volts Thermal Grease Applied Recommended Conditions for Use Characteristic Symbol Supply Voltage VCC Applied across C1-E2 Terminals Condition VCE(surge) Applied across C1-E1, C2-E2 Terminals 1000 Volts VD Applied between 15 1.5 Volts Applied between 0.8 Volts VP1-VPC, VN1 -VNC Input ON Voltage VCIN(on) Input OFF Voltage VCIN(off) CP1-VPC, CN1 -VNC 4.0 Volts t dead For IPM's each Input Signal 3.5 s Arm Shoot-Through Blocking Time Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM200DVA120 FLAT-BASE TYPE INSULATED PACKAGE COLLECTOR-EMITTER SATURATON VOLTAGE CHARACTERISTICS (TYPICAL) 3.0 2.0 1.0 1.0 VD = 15V VCIN = 0V Tj = 25C Tj = 125C 0 IC = 200A VCIN = 0V Tj = 25C Tj = 125C 0 100 200 300 VD = 17V 13 100 13 15 17 0 10 20 30 CONTROL SUPPLY VOLTAGE, VD, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS CHARACTERISTICS (TYPICAL) VCC = 600V VD = 15V Inductive Load Tj = 25C Tj = 125C 102 100 tc(off) tc(on) 10-1 101 103 COLLECTOR CURRENT, IC, (AMPERES) Irr 102 100 trr 10-1 VCC = 600V VD = 15V Inductive Load Tj = 25C Tj = 125C 102 COLLECTOR CURRENT, IC, (AMPERES) 101 100 103 103 102 103 103 VCC = 600V VD = 15V Inductive Load Tj = 25C Tj = 125C 102 PSW(off) PSW(on) 101 PSW(off) 100 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) DIODE FORWARD CHARACTERISTICS CIRCUIT CURRENT VS. CARRIER FREQUENCY 150 VD = 15V VCIN = 15V Tj = 25C Tj = 125C EMITTER CURRENT, IE, (AMPERES) 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) 101 SWITCHING ENERGY, PSW(on), PSW(off), (mJ/PULSE) ton VCC = 600V VD = 15V Inductive Load Tj = 25C Tj = 125C VD = 15V Tj = 25C CIRCUIT CURRENT, ID, (mA) SWITCHING TIMES, tc(on), tc(off), (s) 101 100 10-2 101 15 200 COLLECTOR CURRENT, IC, (AMPERES) toff 10-1 101 Tj = 25oC VCIN = 0V 0 0 101 SWITCHING TIMES, ton, toff, (s) 300 2.0 0 REVERSE RECOVERY TIME, trr, (s) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) 3.0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(SAT), (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE(SAT), (VOLTS) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 102 101 100 50 0 0 1.0 2.0 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 0 10 20 30 CARRIER FREQUENCY, fC, (kHz) Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM200DVA120 OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) Tj = 25C 1.0 0.8 0 13 15 17 1.2 1.2 1.0 0.8 VD = 15V 0 -60 CONTROL SUPPLY VOLTAGE, VD, (VOLTS) VD = 15V UVt UVr 13 11 100 JUNCTION TEMPERATURE, Tj, (C) 100 0.8 VD = 15V 0 -60 180 180 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 0.11C/W 10-2 10-1 TIME, (s) 100 100 180 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) 101 10-3 10-3 20 JUNCTION TEMPERATURE, Tj, (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) SUPPLY CIRCUIT UNDER VOLTAGE PROTECTION, TRIP RESET LEVEL, UVt, UVr, (VOLTS) 15 20 20 1.0 JUNCTION TEMPERATURE, Tj, (C) CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDENCY (TYPICAL) 0 -60 FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL) 10 1 TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 0 OVER CURRENT TRIP LEVEL TEMPERATURE DEPENDENCY (TYPICAL) FAULT OUTPUT PULSE WIDTH TRIP LEVEL, tFO (Tj = 25C) = 1.0 1.2 SHORT CIRCUIT CURRENT TRIP LEVEL, (Tj = 25C) = 1.0 SHORT CIRCUIT CURRENT TRIP LEVEL, (VD = 1EV) = 1.0 FLAT-BASE TYPE INSULATED PACKAGE 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)F = 0.18C/W 10-3 10-3 10-2 10-1 100 10 1 TIME, (s) Sep.2000