SIEMENS Silicon PIN Diodes @ RF switch @ RF attenuator for frequencies above 10 MHz BAR 60 BAR 61 { vPS05178 Type Marking Ordering Code Pin Configuration Package") (tape and reel) BAR 60 60 Q62702-A786 ! SOT-143 4 3 cao7013 BAR 61 61 Q62702-A120 3 ! 2 4 EHAOTO14 Maximum Ratings per Diode Parameter Symboi Values Unit Reverse voltage Ve 100 Vv Forward current Ir 140 mA Total power dissipation, Ts < 65 C?) Prot 250 mW Junction temperature Tj 150 C Storage temperature range Tatg 55 ... + 150 Operating temperature range Top - 55... + 150 Thermal Resistance Junction - ambient Rinsa < 80 KAW Junction - soldering point Rin ss < 340 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 152 07.94 SIEMENS BAR 60 BAR 61 Electrical Characteristics per Diode at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min, | typ. max. DC/AC Characteristics Reverse current Tr Va= 50V ~ - 100 nA Vr = 100 V - ~ 1 pA Forward voltage VF - - 125 |V Ir=100mA Diode capacitance Cr pF Va = 50 V, f= 1 MHz - 0.25 |0.5 Va = 0, f= 100 MHz - 0.2 - Zero bias conductance & - 50 - nS Va = 0, f= 100 MHz Charge carrier life time a ~_ 1 - ps Ir-=10mA, In=6mMA Differential forward resistance n Q f= 100 MHz, Ir =0.01 mA - 2800 |- ie=0.1 mA - 380 |- Ir=1.0mA - 45 - fe=10mMA - 7 - Semiconductor Group 153 SIEMENS BAR 60 BAR 61 Forward current Ir = f (Vr) Forward current fr = f (7's; Ta*) *Package mounted on alumina 102 BAR 60/61 EHDO7C69 200 BAR HOO7072 1 i mA f; oma a9) 160 140 120 10 100 80 60 1071 40 20 P00 0.5 10 Vv 15 {9 50 100 150 V, 1:1; Forward resistance rn = f (Ir) f= 100 MHz 104 BAR 60/61 HD07070 m0 105 102 10! 10 10? = t078 19 10' ma 10? am Ty Semiconductor Group Diode capacitance Cr = f (Vr) BAR 60/61 EHDO7071 hor TI 7 c pF 0.5 \ ~~ j ae. f= MHz | =100 MHz | 00g aE OCS V0 154 SIEMENS BAR 60 BAR 61 Application circuit for attenuation networks with diode BAR 60 I T inf == inf Fo +12V HMO7025 Application circuit for attenuation networks with diode BAR 61 +12V 1.8k 2.2k EHMO7026 Semiconductor Group 155