SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE BVcEO hee VcE (sat) fr Cop @ 10V Ic Pr Device Type @10mA Typical 1MHz Continuous @ 25C (V) Min. Max. @ Ic(mA)|Vc_e (V) Max. @ I{mA) fg(mA) (MHz) Typical (Pe) = (mA) (mw) 2N3903 40 300 2N3904 40 350 2N3905 40 250 2N3906 40 300 2N4123 30 300 2N4124 _ 25 350 2N4125 / 30 250 2N4126 | 25 300 2N4400 40 225 2N4401_ | 40 275 2N4402 40 300 2N4403 40 350 2N4409 50 100 2N4410 100 2N5088 75 2N5089 75 2N5219 2N5220 2N5221 2N5223 2N5225 2N5226 2N5227 GES929 GES930 GES2221 GES2221A GES2222 GES2222A GES2483 GES2906 GES2907 GES5305 GES5306 GES5307 GES5308 GES5368 GES5369 GES5370 GES5371 GES5372 GES5373 GES5374 103 DEVICE NPN PNP 2N3903 2N4402 2N4403 1 2N4126 GES5371 GES5373 ES5374 7 G 10 GES5812 GES5817 GES5823 1 SILICON SIGNAL TRANSISTORS BVceo (Vv) TO-92 PACKAGE hee COMPLEMENTARY PAIRS VcE(SAT) MIN.-MAX. @ Ic, Vee (V) 50-150 10mA 50-150 50-1 100-300 50-150 100- 50-150 120-360 50-150 120-360 200 100-300 60-600 100-300 200-400 60-300 30-150 1 50-150 150-500 150-500 60-160 60-160 1 100-200 NIN INI N EDN 150-300 160 i 100-200 100-200 NIN 100-300 1 wafer f a} li] / fo} f if] af af fe] lpn 200-500 1 1 1 107 (V) MAX. @ COMPLEMENT 2N3905 2N3904 2N4125 DQ OOO) Oj;O1a) GES6013 12 GES6015 17 $601 GES2906 (Continued) Silicon Transistors Features: Performance comparable to hermetic units High Gain Medium Voltage == Low Verean High Frequency The General Electric GES2221 and GES2222 units are silicon, NPN, planar passi- vated, epitaxial devices specifically developed for high speed switching, amplifier and core driver applications. Te jt absolute maximum ratingS: (T.=25C,unless otherwise specified) fr Voltages GES2221 GES2222 ky i Collector to Emitter Vero 30 30 Volts Lt A 2st | Eo Collector to Emitter Vous 40 40 Volts SEATINGPLANE | EMITTER Emitter to Base Veso 5 5 Volts TO-92 3 COLLECTOR Collector to Base Voso 60 60 Volts j Current Collector Ic 400 400 mA 407| 482/ols6loisl 3 Collector ( peak, pulsed 10 usec, =2% duty cycle) Io 800 800 mA Dissipation Total Power (Tc25C) Pr 1.0 10 Watts Total Power (Ts25C) Pr 0.360 0.360 Watts Derate Factor (Tc2=25C) 10.0 10.0 mW/C Q Derate Factor (Ts225C) 3.6 3.6 mW/C votes: Temperature 1. THREE LEADS Storage Tate < 65 to +150 C 2.CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE Operating 7; < ~65to 4125 > C NPD APPLIES SETWEEN Pe aNOTE TO NaN 5B) PP +1L from FROM THE SEATING PLANE. DIAMETER IS UN- head (he ie we) r. __ 4260 C CONTROLLED. IN Ly AND BEYOND 12. 70MM (500") electrical characteristics: (T, = 25C,unless otherwise specified) GES2221 GES2222 STATIC CHARACTERISTICS Symbol Min. Max. Min. Max. Collector-Emitter Breakdown Voltage (Ic = 10mA, In = 0) Vee cro* 30 30 Volts Emitter-Base Breakdown Voltage (In = 10zA, Ic => 0) Vispweso 5 5 Volts Collector-Base Breakdown Voltage (Ic = 10zA, In = 0) Visco 60 60 Volts Collector-Emitter Breakdown Voltage (Ic = 10nA, Ver = 0) Virpcers 40 40 Volts Collector-Emitter Saturation Voltage (Ic = 150mA, In = 15mA) Vernsar* 3 3 Volts (Ic = 500mA, Is = 50mA) Voerwar* 1.2 1.2 Volts Base-Emitter Saturation Voltage (Ic = 150mA, Ig = 15mA) Vergan* 1.1 1.1 Volts (Ic = 500mA, In = 50mA) Vaxean 2.4 2.4 Volts 1195 GES2221, 2 | STATIC CHARACTERISTICS (Continued) Forward Current Transfer Ratio (Ven = 1.0V, Ic = 150mA) (Vez = 10V, Ic = 0.1mA) (Vcz = 10V, Ic = 1.0mA) (Vcr = 10V, Tex 10mA) (Vez = 10V, Ic = 150mA) (Ven = 10V, Ic = 500mA) Collector Cutoff Current (Vcs = 50V, In = 0) (Ves = 50V, Is = 0, Ta = 100C) Emitter-Base Reverse Current (Vue = 3.0V, Ic = 0) DYNAMIC CHARACTERISTICS Gain Bandwidth Product (Vee = 20V, Ic = 20mA, f = 100MHz) Collector-Base Capacitance (Vos = 10V, In = 0, f = 1 MHz) Emitter-Base Capacitance (Ves = 0.5V, Ic = 0, f= 1MHz) *Pulse width S 300usec., Duty Cycle $ 2% Symbol hrs * hre hrs hyn * here * hre* Tczo Tczo Tuo 1196 GES2221 Min. Max. 20 20 25 85 40 120 20 10 10 50 250 8.0 25 GES2222 Min, Max. 50 35 50 75 100 3800 30 10 10 50 250 8.0 25 nA nA MHz pF pF