NRVUA160VT3G - ON SEMICONDUCTOR

July, 2020 − Rev. 8

1Publication Order Number:

MURA160T3/D

Surface Mount

Ultrafast Power Rectifier

MURA160, NRVUA160V,

SURA8160

Ideally suited for high voltage, high frequency rectification, or as

free wheeling and protection diodes in surface mount applications

where compact size and weight are critical to the system.

Features

•Small Compact Surface Mountable Package with J−Bend Leads

•Rectangular Package for Automated Handling

•High Temperature Glass Passivated Junction

•Low Forward Voltage Drop (1.05 V Max @ 1.0 A, TJ = 150°C)

•NRVUA and SURA8 Prefixes for Automotive and Other

Applications Requiring Unique Site and Control Change

Requirements; AEC−Q101 Qualified and PPAP Capable*

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Mechanical Characteristics:

•Case: Epoxy, Molded

•Weight: 70 mg (Approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•Polarity: Polarity Band Indicates Cathode Lead

•ESD Protection:

♦Human Body Model > 4000 V (Class 3)

♦Machine Model > 400 V (Class C)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping†

ORDERING INFORMATION

ULTRAFAST RECTIFIER

1 AMPERE, 600 VOLTS

www.onsemi.com

MURA160T3G SMA

(Pb−Free)

5,000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SMA

CASE 403D

MARKING DIAGRAM

U4J

AYWW G

U4J = Device Code

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

NRVUA160VT3G SMA

(Pb−Free)

5,000/Tape & Reel

SURA8160T3G SMA

(Pb−Free)

5,000/Tape & Reel

MURA160, NRVUA160V, SURA8160

www.onsemi.com

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

600 V

Average Rectified Forward Current

@ TL = 145°C

@ TL = 110°C

IF(AV) 1.0

2.0

Non-Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

IFSM 30

Operating Junction Temperature Range TJ−65 to +175 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Lead (TL = 25°C) (Note 1)

Thermal Resistance, Junction−to−Ambient (Note 1)

PsiJL

(Note 2)

RqJA

216

°C/W

Thermal Resistance, Junction−to−Case Top (Note 1) YJCT 16 °C/W

1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR−4.

2. In compliance with JEDEC 51, these values (historically represented by RqJL) are now referenced as PsiJL.

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Max Unit

Maximum Instantaneous Forward Voltage (Note 3)

(iF = 1.0 A, TJ = 25°C)

(iF = 1.0 A, TJ = 150°C)

vF1.25

1.05

Maximum Instantaneous Reverse Current (Note 3)

(Rated dc Voltage, TJ = 25°C)

(Rated dc Voltage, TJ = 150°C)

iR5.0

150

Maximum Reverse Recovery Time

(iF = 1.0 A, di/dt = 50 A/ms)

trr 75

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

MURA160, NRVUA160V, SURA8160

www.onsemi.com

0.1

200100 600

VR, REVERSE VOLTAGE (VOLTS)

, INSTANTANEOUS VOLTAGE (VOLTS)

Figure 1. Typical Reverse Current Figure 2. Maximum Reverse Current

Figure 3. Typical Forward Voltage Figure 4. Maximum Forward Voltage

100

IR, REVERSE CURRENT (mA)

1.10.90.70.5 1.3

0.01

0.1

1.5

, INSTANTANEOUS FORWARD CURRENT (A)

100

200100 600

VR, REVERSE VOLTAGE (VOLTS)

, INSTANTANEOUS VOLTAGE (VOLTS)

1000

IR, REVERSE CURRENT (mA)

1.10.9 1.3

0.01

0.1

1.71.5

, INSTANTANEOUS FORWARD CURRENT (A)

TJ = 150°C

TJ = 100°C

TJ = 25°C

TJ = 150°C

TJ = 100°C

TJ = 25°C

TC = 150°C100°C

25°C

TC = 150°C100°C

25°C

300 300

1.7 1.9

400 500

0.01 400 500

0.70.50.3 0.3

MURA160, NRVUA160V, SURA8160

www.onsemi.com

322416

0840

VR, REVERSE VOLTAGE (VOLTS)

TL, LEAD TEMPERATURE (°C)

Figure 5. Typical Capacitance Figure 6. Maximum Capacitance

Figure 7. Current Derating, Lead Figure 8. Current Derating, Ambient

(FR−4 Board with Minimum Pad)

100

120 180

IF(AV), AVERAGE FORWARD CURRENT (A)

VR, REVERSE VOLTAGE (VOLTS)

TA, AMBIENT TEMPERATURE (°C)

80604020 100

0.1

140120

Figure 9. Power Dissipation

1.5

021.510.5

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

282012436

C, CAPACITANCE (pF)

3224168400282012436

C, CAPACITANCE (pF)

, AVERAGE POWER DISSIPATION (W)

160 180

NOTE: TYPICAL

CAPACITANCE AT

0 V = 24 pF

NOTE: MAXIMUM

CAPACITANCE AT

0 V = 27 pF

SQUARE WAVE

SQUARE

WAVE

140 160

2.5

3.5

0.5

IF(AV), AVERAGE FORWARD CURRENT (A)

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

2.5 3

3.5

4.5

DIM

MIN NOM MAX MIN

MILLIMETERS

1.97 2.10 2.20 0.078

INCHES

A1 0.05 0.10 0.20 0.002

b1.27 1.45 1.63 0.050

c0.15 0.28 0.41 0.006

D2.29 2.60 2.92 0.090

E4.06 4.32 4.57 0.160

L0.76 1.14 1.52 0.030

0.083 0.087

0.004 0.008

0.057 0.064

0.011 0.016

0.103 0.115

0.170 0.180

0.045 0.060

NOM MAX

4.83 5.21 5.59 0.190 0.205 0.220

SCALE 1:1

SMA

CASE 403D

ISSUE H

DATE 23 SEP 2015

xxxx = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

STYLE 1:

PIN 1. CATHODE (POLARITY BAND)

2. ANODE

STYLE 2:

NO POLARITY

STYLE 1 STYLE 2

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present.

A1 xxxx

AYWWG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,

1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.

POLARITY INDICATOR

OPTIONAL AS NEEDED

(SEE STYLES)

xxxx

AYWWG

GENERIC

MARKING DIAGRAM*

4.000

0.157

2.000

0.079

2.000

0.079

ǒmm

inchesǓ

SCALE 8:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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