NJG1129MD7
- 1 -
Ver.2009-11-25
UHF BAND LOW NOISE AMPLIFIER GaAs MMIC
Q GENERAL DESCRIPTION Q PACKAGE OUTLINE
The NJG1129MD7 is a low noise amplifier GaAs MMIC
designed for mobile digital TV application (470 ~770 MHz).
This IC has a LNA pass-through function to select high
gain mode or low gain mode by si ngle bit control.
Also, the ESD protection circuit is integrated into the IC to
achieve high ESD tolerance.
Q FEATURES
O Low voltage operation +2.8V typ.
O Low voltage control +1.85V typ.
O Package EQFN14-D7 (Package size: 1.6mm x 1.6mm x 0.397mm t yp.)
[High gain mode]
O Low current consumption 5.0mA typ.
O High gain 15.0dB typ.
O Low noise figure 1.4dB typ.
O High input IP3 +1.0dBm typ.
[Low gain mode]
O Low current consumption 16μA typ.
O Gain -4.0dB typ.
O High input IP3 +20.0dBm typ.
Q PIN CONFIGURATION
Q TRUTH TABLE
Pin Connection
1. GND 8. GND
2. GND 9. GND
3. VINV 10. GND
4. GND 11. GND
5. GND 12. RFIN
6. GND 13. GND
7. RFOUT 14. VCTL
* Exposed PAD: GND
(Top View)
1 42 3
5
7
613
11 9 810
12
14
Logic
circuit
Bypass circuit
LNA circuit
Bias
circuit
VCTL LNA Mode
H High G ain m ode
L Low Gain mode
“H”=VCTL
(
H
)
, “L”=VCTL
(
L
)
NJG11 29MD7
Note: Specifications and description listed in this datasheet are subject to change without notice.
NJG1129MD7
- 2 -
Q ABSOLUTE MAXIMUM RATINGS Ta=+25°C, Zs=Zl=50 ohm
PARAMETER SYMBOL CONDITIONS RATINGS UNITS
Drain voltage VDD 5.0 V
Inverter voltage VINV 5.0 V
Control voltage VCTL 5.0 V
Input power Pin V
DD=VINV=2.8V +15 dBm
Power dissipation PD 4-layer FR4 PCB with through-hol e
(74.2x74.2mm), Tj=150°C 1300 mW
Operating temperature Topr -40~+85 °C
Storage temperature Tstg -55~+150 °C
Q ELECTRICAL CH ARACTERISTI CS1 (DC CHARACTERISTICS)
General conditions: VDD=VINV=2.8V, Ta=+25°C, Zs=Zl=50 ohm, with application circuit
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating voltage VDD 2.3 2.8 3.6 V
Inverter voltage VINV 2.3 2.8 3.6 V
Control voltage (High) VCTL(H) 1.5 1.85 3.6 V
Control voltage (Low) VCTL(L) 0 0 0.3 V
Operating current1 IDD1 RF OFF, VCTL=1.85V - 5.0 8.0 mA
Operating current2 IDD2 RF OFF, VCTL=0V - 1 5
μA
Inverter current1 IINV1 RF OFF, VCTL=1.85V - 90 180
μA
Inverter current2 IINV2 RF OFF, VCTL=0V - 15 40
μA
Control current ICTL RF OFF, VCTL=1.85V - 5 10
μA
NJG1129MD7
- 3 -
Q ELECTRICAL CHARACTERI STICS2 (High Gain mode)
General conditions: VDD=VINV=2.8V, VCTL=1.85V, Ta=+25 °C, Zs=Zl=50 ohm, with application circuit
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating frequenc y fRF 470 620 770 MHz
Small signal gain1 Gain1 11.0 15.0 19.0 dB
Noise figure NF Exclude PCB & connector
losses*1 - 1.4 1.9 dB
Input power at 1dB gain
compression point1 P-1dB(IN)1 -14.0 -6.0 - dBm
Input 3rd order
intercept point1 IIP3_1 f1=fRF, f2=fRF+100kHz,
PIN=-25dBm -6.0 +1.0 - dBm
RF IN VSWR1 VSWRi1 - 1.5 4.5 -
RF OUT VSWR1 VSWRo1 - 1.5 2.8 -
Q ELECTRICAL CHARACTERI STICS3 (Low Gain mode)
General conditions: VDD=VINV=2.8V, VCTL=0V, T a=+25°C, Zs=Zl=50 oh m, with application circuit.
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating frequenc y fRF 470 620 770 MHz
Small signal gain2 Gain2 Exclude PCB & connector
losses*2 -6.0 -4.0 - dB
Input power at 1dB gain
compression point2 P-1dB(IN)2 +5.0 +12.0 - dBm
Input 3rd order
intercept point2 IIP3_2 f1=fRF, f2=fRF+100kHz,
PIN=-12dBm +14.0 +20.0 - dBm
RF IN VSWR2 VSWRi2 - 1.5 3.0 -
RF OUT VSWR2 VSWRo2 - 1.5 2.8 -
*1 Input PCB and connector losses: 0.036 dB(at 470MHz), 0.053dB(at 770MHz)
*2 Input & output PCB and connector losses: 0.072dB(at 470 MHz), 0.105dB(at 770MHz)
NJG1129MD7
- 4 -
Q TERMINAL INFORMATION
No. SYMBOL DESCRIPTION
1, 2, 4, 5,
6, 8, 9, 10,
11, 13 GND Ground terminal. These terminals should be connected to the ground
plane as close as possible for excellent RF p erformance.
3 VINV Inverter voltage supply t erminal.
7 RFOUT
RF Output terminal. RF signal comes out from this terminal, and goes
through an external matching circuit connected to this. Inductor L4 as
shown in the application circuit is a part of an external matching circuit,
and also provide DC po wer to LNA.
12 RFIN
RF input terminal. The RF signal is input through external matching
circuit connected to this terminal.
Since this IC is integrated an input DC blocking capacitor.
14 VCTL Control voltage supply t erminal.
NJG1129MD7
- 5 -
Q ELECTRICAL CHARACTERI STICS (High Gain mode )
Conditions: Ta=+25°C, VDD= VINV=2.8V, VCTL=1. 85V, Zs=Zl=50 ohm, with application circuit
-30
-25
-20
-15
-10
-5
0
5
10
15
-40 -35 -30 -25 -20 -15 -10 -5 0
Pout vs. Pin
(f=620MHz)
Pou t ( d Bm )
Pin ( dB m )
Pout
P-1dB(IN)=-6.0dBm
0
5
10
15
20
2
4
6
8
10
-40 -35 -30 -25 -20 -15 -10 -5 0
Gain, IDD vs. Pin
(f=620MHz)
Gain (dB)
IDD (mA)
Pin (dBm )
IDD
Gain
P-1dB(IN)=-6.0dBm
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
Pout, IM3 vs. Pin
(f1=620MHz, f2=620.1MHz)
Pout, IM3 (dBm)
Pin (dBm )
Pout
IM3
IIP3=+4.5dBm
11
12
13
14
15
16
17
18
19
0
0.5
1
1.5
2
2.5
3
3.5
4
400 450 500 550 600 650 700 750 800
Gain, NF vs. Frequency
Gain (dB)
NF (dB)
Frequency (MHz)
NF
Gain
(Ex clude P CB, Connector L o sses)
-20
-15
-10
-5
0
400 450 500 550 600 650 700 750 800
P-1dB(IN) vs. Frequency
P-1dB(IN) (dBm)
Frequency (MHz)
P-1dB(IN)
-5
0
5
10
15
20
25
400 450 500 550 600 650 700 750 800
IIP3, OIP3 vs. Frequency
(f1=frequency, f2=f1+100kHz, Pin=-25dBm)
IIP3, OIP3 (dBm)
Frequency (MHz)
OIP3
IIP3
NJG1129MD7
- 6 -
Q ELECTRICAL CHARACTERI STICS (High Gain mode )
Conditions: Ta=+25°C, VDD= VINV=2.8V, VCTL=1. 85V, Zs=Zl=50 ohm, with application circuit
-15
-10
-5
0
5
012345
P-1dB(IN) vs. VDD=VINV
(f=620MHz)
P-1dB(IN) (dBm)
VDD (V)
P-1dB(IN)
0
5
10
15
20
0
0.5
1
1.5
2
2.5
3
3.5
4
012345
Gain, NF vs. VDD=VINV
(f=620MHz)
Gain (dB)
NF (dB)
VDD (V)
NF
Gain
0
5
10
15
20
05000 10000 15000 20000
K-factor vs. Frequency
K-factor
Frequency (MHz)
0
1
2
3
4
5
6
7
8
012345
VSWR vs. VDD=VINV
VSWRi(max.), VSWRo(max)
VDD (V)
VSWRo(max.)
VSWRi(max.)
-5
0
5
10
15
20
25
012345
IIP3, OIP3 vs. VDD=VINV
(f1=620MHz, f2=620.1MHz, Pin=-25dBm)
IIP3, OIP3 (dBm)
VDD (V)
OIP3
IIP3
0
5
10
15
012345
IDD vs. VDD=VINV
ID D (m A)
VDD (V)
IDD
NJG1129MD7
- 7 -
Q ELECTRICAL CHARACTERI STICS (High Gain mode )
Conditions: Ta=+25°C, VDD=2.8V, Zs=Zl=50 ohm, with application circuit
0
1
2
3
4
5
6
00.5 11.5 2
IDD vs. VCTL
IDD (m A)
VCTL (V)
NJG1129MD7
- 8 -
Q ELECTRICAL CHARACTERI STICS (High Gain mode )
Conditions: VDD= VINV=2.8V, VCTL=1. 85V, Zs=Zl=50 ohm, with application circuit
0
1
2
3
4
5
6
00.511.52
IDD vs. VCTL
IDD (m A)
VCTL (V)
85oC
75oC
50oC
25oC
0oC
-25oC
-40oC
0
1
2
3
4
5
6
7
8
-50 0 50 100
VSW R v s. Te m p.
(fRF=470~770MHz)
VSWRi(max.), VSWRo(max.)
Temperature (oC)
VSWRi(max.)
VSWRo(max.)
0
1
2
3
4
5
6
7
-50 0 50 100
IDD vs. Temp.
(RF OFF)
IDD (m A )
Tempe r atur e (oC)
IDD
0
5
10
15
20
25
-50 0 50 100
IIP3, OIP3 vs. Temp.
( f1=620MHz , f2=620. 1MHz, Pin= -25d Bm )
IIP3, OIP3 (dBm)
Temperature (oC)
IIP3
OIP3
-10
-8
-6
-4
-2
0
-50 0 50 100
P-1dB(IN) vs. Temp.
(fRF=620MHz)
P-1 dB (I N) (dBm)
Temper ature (oC)
P-1dB(IN)
0
5
10
15
20
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 0 50 100
Gain, NF vs. Temp.
(fRF=620MHz)
Gain (dB)
NF (dB)
Temperature (oC)
NF
Gain
NJG1129MD7
- 9 -
Q ELECTRICAL CHARACTERI STICS (High Gain mode )
Conditions: Ta=+25°C, VDD= VINV=2.8V, VCTL=1. 85V, Zs=Zl=50 ohm, with application circuit
S11, S22 S21, S12
VSWR Zin, Zout
S11, S22 (50MHz~20GHz) S21, S12 (50MHz~20GHz)
NJG1129MD7
- 10 -
Q ELECTRICAL CHARACTERI STICS (Low Gain mode)
Conditions: Ta=+25°C, VDD= VINV=2.8V, VCTL=0 V, Zs=Zl=50 ohm, with application circuit
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
-40 -30 -20 -10 0 10 20
Pout vs. Pin
(f=620MHz)
Pout (dBm )
Pin (dBm)
Pout
P-1dB(IN)=+13.3dBm
-10
-8
-6
-4
-2
0
0
0.2
0.4
0.6
0.8
1
-40 -30 -20 -10 0 10 20
Gain, IDD vs. Pin
(f=620MHz)
Gain (dB)
IDD (mA)
Pin (dBm )
IDD
Gain
P-1dB(IN)=+13.3dBm
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10 20 30
Pout, IM3 vs. Pin
(f1=620MHz, f2 =620.1MHz )
Pout, IM3 (dBm)
Pin (dBm)
Pout
IM3
IIP3=+24.8dBm
-10
-8
-6
-4
-2
0
0
2
4
6
8
10
400 450 500 550 600 650 700 750 800
Gain, NF vs. Frequency
Gain (dB)
NF (dB)
Frequency (MHz)
NF
Gain
(Exclude PCB, Connector Losses)
0
5
10
15
400 450 500 550 600 650 700 750 800
P-1dB(IN) vs. Frequency
P-1dB(IN) (dBm)
Frequency (MHz)
P-1dB(IN)
10
12
14
16
18
20
22
24
26
400 450 500 550 600 650 700 750 800
IIP3, OIP3 vs. Frequency
(f1=frequency , f2=f1+100kHz, Pin=-12dBm)
IIP3, OIP3 (dBm)
Frequency (MHz)
OIP3
IIP3
NJG1129MD7
- 11 -
Q ELECTRICAL CHARACTERI STICS (Low Gain mode)
Conditions: Ta=+25°C, VDD= VINV=2.8V, VCTL=0 V, Zs=Zl=50 ohm, with application circuit
0
0.5
1
1.5
2
2.5
3
-50 0 50 100
VSW R vs. Te m p.
(fRF=470~770MHz)
VSWRi(max.), VSWRo(max.)
Temperature (oC)
VSWRi(max.)
VSWRo(max.)
0
0.2
0.4
0.6
0.8
1
-50 0 50 100
IDD vs. Temp.
(RF OFF)
ID D (μA)
Tem p er atu r e (oC)
IDD
5
10
15
20
25
-50 0 50 100
P-1dB(IN) vs. Temp.
(fRF=620MHz)
P-1 dB (I N) (dBm)
Temper ature (oC)
P-1dB(IN)
0
5
10
15
20
25
30
-50 0 50 100
IIP3, OIP3 vs. Temp.
( f1=620MHz , f2=620. 1MHz, Pin= -12dB m )
IIP3, OIP3 (dBm)
Temperatur e (oC)
IIP3
OIP3
-5
-4
-3
-2
-1
0
-50 0 50 100
Gain vs. Temp.
(fRF=620MHz)
Gain (dB)
Temperat u r e (oC)
Gain
0
5
10
15
20
05000 10000 15000 20000
K-factor vs. Frequency
K-factor
Frequency (MHz)
NJG1129MD7
- 12 -
Q ELECTRICAL CHARACTERI STICS (Low Gain mode)
Conditions: Ta=+25°C, VDD= VINV=2.8V, VCTL=0 V, Zs=Zl=50 ohm, with application circuit
S11, S22 S21, S12
VSWR Zin, Zout
S11, S22 (50MHz~20GHz) S21, S12 (50MHz~20GHz)
NJG1129MD7
- 13 -
Q APPLICATION CIRCUIT
Q TEST PCB LAYOUT
PRECAUTIONS
[1] L1-L4, C1 and C2 form ed the external matching circuit.
[2] C3 is a bypass capacitor.
[3] Ground terminals should be connected with ground plane as close as possible in order to avoid
parasitic inductance.
[4] Please place the ground trac e between RFI N(12pin) and RFOUT (7pin) on the top PCB la yout to
have better isolation betwee n input and output RF ports.
[5] Please place all external parts around the IC as close as possible.
Parts ID Notes
L1, L3, L4 MURATA
LQP03T series
L2 TAIYO-YUDEN
HK1005 series
C1~C3 MURATA
GRM03 series
PCB (FR-4):
t=0.2mm
MICROSTRIP LINE
WIDTH=0.4mm (Z0=50 ohm)
PCB SIZE=16.8mmx16.8mm
Parts List
1 42 3
5
7
613
11 9 810
12
14
Logic
circuit
Bypass circuit
LNA circuit
Bias
circuit
L1
22nH C1
3pF
RF IN RF OUT
VDD
VCTL
VINV
L2
27nH L3
22nH
L4
15nH
C2
5pF
C3
1000pF
RF IN RF OUT
VDD
VCTL VINV
L1
L2
L4
L3 C2
C3
C1
NJG1129MD7
- 14 -
Q MEASUREMENT BLOCK DIAGRAM
V
DD
=2.8V
DUT RF OutputRF Input
Network
A
nalyze
r
V
CTL
= 1.85V or 0. 0V
V
INV
=2.8V
S parameter Measurement Block Diagram
RF OutputRF Input
NF
A
nalyze
r
Noise Sou rce
V
DD
=2.8V
V
CTL
= 1.85V or 0. 0V
V
INV
=2.8V
DUT
Noise Figure Measurement Block Diagram
Input IP3 Measurement Block Diagram
RF OutputRF Inp ut Spectrum
A
nalyzer
Signal
Generator
freq.1
freq.2
2dB
A
ttenuator
2dB
A
ttenuator
Power
Comb.
V
DD
=2.8V
V
CTL
= 1.8 5V or 0 . 0V
V
INV
=2.8V
DUT
Signal
Generator
NJG1129MD7
- 15 -
Q PACKAGE OUTLINE (EQFN14-D7)
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this p roduct.
• To waste this
p
roduct,
p
lease obe
y
the relatin
g
law of
y
our countr
y
.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please
handle with care to avoid t hese dama
es.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions.
The application circuits in this databook are
described only to show representative
usages of the product and not intended for
the guarantee or permission of any right
including the ind ustrial rights.
Details of"A" part（× ２）
B
φ0.05
S
M
AB
C0.1
"A"
0.05
S
3-R0.2
A
S
0.075
S
R0.06
2
-
R
0
.
0
8
2-R0.06
C
0
.
1
R0.03
1.6±0.05
1.6±0.05
0.397±0.03
0.010
min0.15
0.74
＋0.07
－0.03
0.21±0.10
0.21±0.1
0.18
－0.04
＋0.06
0.2
0.4
0.11
0.075
0.05
0.176
＋0.010
－0.008
UNIT：mm
SUBSTRATE MATERIAL：Copper
TERMINAL FINISH：Sn-Bi plating
MOLD MATERIAL：Epoxy resin
MASS（TYP.）：0.0034（g）