A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL NONETEST CONDITIONS MINIMUM
TYPICAL
MAXIMUM
UNITS
BVCBO IC = 50 mA 36 V
BVCES IC = 100 mA 36 V
BVCEO IC = 50 mA 18 V
BVEBO IE = 10 mA 3.5 V
ICES VCE = 15 V 10 mA
hFE VCE = 5.0 V IC = 5.0 A 10 --- ---
COB VCB = 12.5 V f = 1.0
MHz 270 pF
GP
ηηC VCE = 12.5 V POUT = 70 W f = 50 MHz
10
60 dB
%
NPN SILICON RF POWER TRANSISTOR
VLB70-12S
DESCRIPTION:
The ASI VLB70-12S is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 12.0 A
VCBO
36 V
VCEO 18 V
VEBO 3.5 V
PDISS
183 W @ TC = 25 OC
TJ -65 OC to +200 OC
TSTG -65 OC to +150 OC
θθJC 1.05 OC/W
PACKAGE STYLE .380 4L STUD
ORDER CODE: ASI12738
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inches / mm
H.090 / 2.29 .100 / 2.54
DIM
.220 / 5.59 .230 / 5.84
.490 / 12.45.450 / 11.43
I
J
.155 / 3.94 .175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E F
D
ØC
B
.112x45°
G
H
J
I
A
#8-32 UNC-2A
