IRFWZ14/10 N-CHANNEL IRF1IZ14/10 POWER MOSFETS FEATURES DUPAK + Lower Ros(on) * Improved inductive Ruggedness Fast switching times + Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area 3 Improved high temperature reliability nN 1. Gate 2. Drain 3. Source IRFWZ14/10 F-PAK PRODUCT SUMMARY Part Number BVpss Rosjon) Ib IRFWZ14/1Z14 60 0.20 410A ' IRFWZ10/1210 50 0.20 10A 1. Gate 2. Drain 3. Source IRFIZ14/10 ABSOLUTE MAXIMUM RATINGS . IRFWZ14 IRFWZ10 . Characteristic Symbol IRFIZ14 IRFIZi0 Unit Drain-Source Voltage (1) Voss 60 50 Vdc Drain-Gate Voltage (Ras=1M0 )(1) VoGR 60 50 Vde Gate-Source Voltage Ves +20 Adc Continuous Drain Current Tc=25 C i) 10 Adc Continuous Drain Current Tc=100 C Ip 7.2 Adc Drain Current - Pulsed (3) lpm 40 Adc Single Pulsed Avalanche Energy (4) Eas 47 mJ Avalanche Current las 10 A Total Power Dissipation Tc=25 C p 43 Watts D Derate Above 25 C 0.29 w/c i t Operating and Storage Ty, Ts1a 55 to +175 C Junction Temperature Range Maximum Lead Temp. for Soldering Tt 300 C Purposes, 1/8" from case for 5 seconds Notes : (1) Tu=25C to 175C (2) Pulse test : Pulse width < 3004s, Duty Cycle< 2% (3) Repetitive rating : Pulse width limited by max. junction temperature (4) L= 548#H, Vad=25V, Re=2500 , Starting Ts=25C ELECTRONICS Mm 7964142 0029531 293 IRFW2Z14/10 N-CHANNEL IRFIZ14/10 POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) Symbol Characteristic Min | Typ | Max | Units Test Conditions BVpss | Drain-Source Breakdown Voltage 4 IRFWZ14/Z14 60 - - V_ | Ves=0V, Ip=250nA IRFWZ10/1Z10 50 - - Vestn) | Gate Threshold Voltage 2.0 - 4.0 V | Vos=Ves, Ip=250A less | Gate-Source Leakage Forward - - 100 | nA | Ves=20V Iess Gate-Source Leakage Reverse - - | -100) nA | Ves=-20V Ipss_ | Zero Gate Voltage Drain Current - - 250 | #A | Vps=Max. Rating, Vas=0V - - | 1000} #A | Vos=0.8 Max. Rating, Vas=OV, Tc=150C Rosjon) | Static Drain-Source On - - 0.2 Q | Vas=10V, IpD=5A Resistance(2) Qts Forward Transconductance (2) 2.4 - - MU | Vas=50V, lpD=5A Ciss Input Capacitance - 358 - pF Coss | Output Capacitance - 134 - pF / Vas=0V, Vos=25V, f=1MHz Crss Reverse Transfer Capacitance - 55 - pF td{on) Turn-On Delay Time - - 15 ns | Vop=0.5 BVoss, ID=10A, Zo=240 tr Rise Time - - 75 ns_ | (MOSFET switching times are essentially tafof) | Turn-Off Delay Time - - 20 ns | independent of operating temperature) tf Fall Time - - 2g ns Qg Total Gate Charge - - 12 | nC | Vas=10V, Vos=10A, Vos=0.8 Max. Rating (Gate-Source Pius Gate-Drain) (Gate charge is essentially independent of Qgs Gate-Source Charge - 3.0 - nC } operating temperature} Qga Gate-Drain ("Miller") Charge - 5.8 - nc THERMAL RESISTANCE Symbol Characteristics All Units Remark Rthuc Junction-to-Case MAX 3.5 KAW Rthya Junction-to-Ambient MAX 62.5 K/W | Free Air Operation Notes : (1) Tu=25C to 175C (2) Pulse test : Pulse width< 300s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature ELECTRONICS MB 7964142 0029532 Let IRFW2Z14/10 N-CHANNEL IRFIZ14/10 POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Min | Typ | Max | Units Test Conditions Is Continuous Source Current ; . 40 A | Modified MOSFET - (Body Diode) symbol showing the &) Pulse Source Current integral reverse 4 IsM | - - 40 | A | P-Njunction rectifier (Body Diode) (3) Vsb Diode Forward Voltage (2) - - 1.6 V_ | Ty=25C, Is=10A, Vas=0V tr | Reverse Recovery Time - - | 140 | ns | Ty=25C, IF=10A, die/dt=100A/S ' Notes : (1) Tu=25C to 175C (2) Pulse test : Pulse width<300us, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. Junction temperature Me 7964142 0029533 Obb ELECTRONICS