OM6413SP3 OM6414SP3 OM6415SP3 OM6416SP3 THREE PHASE MOSFET HALF BRIDGE IN A PLASTIC SIP PACKAGE 100V Thru 500V, Up to 6 Amp, Three Phase MOSFET Half Bridge FEATURES * * * * * * Isolated High Density, Low Profile Package 6 MOSFETs Per Package Fast Switching, Low Drive Current Heat Sinkable Low RDS(on) P-Channel Also Available DESCRIPTION This series of three phase MOSFET half bridge products feature the latest advanced MOSFET and packaging technology. They are ideally suited where small size, high performance and high reliability are required in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS (Per MOSFET) PART NUMBER OM6413SP3 OM6414SP3 OM6415SP3 OM6416SP3 VDS 100V 200V 400V 500V SCHEMATIC D G S D G 1 3 4 G 5 D G S D S S D G 1 S 6 9 10 11 12 14 15 3 VCC N/C Gate Gate Pin 5: Pin 6: Pin 7: Pin 8: 5 9 11 13 15 17 16 17 18 Source Drain/Source N/C N/C Pin 9: Pin 10: Pin 11: Pin 12: Gate Gate Source Drain/Source 4 2.1 - 115 6 Pin 13: Pin 14: Pin 15: Pin 16: Note: Pin 1 and Pin 18 are common 4 11 R1 Supersedes 1 06 R0 7 S 2 Pin 1: Pin 2: Pin 3: Pin 4: ID(MAX) 6A 4A 2.5A 2A PIN CONNECTION D G RDS(on) .085 .180 .55 .85 8 10 12 14 16 18 N/C Gate Gate Source Pin 17: Drain/Source Pin 18: VCC 2.1 TC = 25 unless otherwise noted STATIC P/N OM6413SP3 ELECTRICAL CHARACTERISTICS: TC = 25 unless otherwise noted STATIC P/N OM6414SP3 Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-Source Breakdown 100 BVDSS Drain-Source Breakdown 200 V Voltage ID = 250 mA VGS(th) Gate-Threshold Voltage IGSSF Gate-Body Leakage Forward 100 IGSSR Gate-Body Leakage Reverse -100 IDSS VGS = 0, 2.0 4.0 V V VGS = 0, V VDS = VGS, ID = 250 mA Voltage ID = 250 mA VDS = VGS, ID = 250 mA VGS(th) Gate-Threshold Voltage nA VGS = 20 V IGSSF Gate-Body Leakage Forward 100 nA VGS = 20 V nA VGS = - 20 V IGSSR Gate-Body Leakage Reverse - 100 nA VGS = - 20 V IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, 2.0 4.0 Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, TC = 100 C ID(on) On-State Drain Current1 6 VDS(on) Static Drain-Source On-State 1.275 1.425 TC = 100 C VDS 2 VDS(on), VGS = 10 V ID(on) V VGS = 10 V, ID = 6 A VDS(on) Static Drain-Source On-State VGS = 10 V, ID = 6 A RDS(on) Static Drain-Source On-State Voltage1 .085 .095 Resistance1 .130 .155 VGS = 10 V, ID = 6 A, 2.1 - 116 Resistance1 RDS(on) Static Drain-Source On-State Input Capacitance 1.8 VDS 2 VDS(on), VGS = 10 V V VGS = 10 V, ID = 4 A 0.14 0.18 VGS = 10 V, ID = 4 A 0.28 0.36 VGS = 10 V, ID = 4 A, Resistance1 TC = 100 C DYNAMIC Ciss 1.4 A Resistance1 RDS(on) Static Drain-Source On-State Forward Transductance1 4 Voltage1 RDS(on) Static Drain-Source On-State gfs On-State Drain Current1 A TC = 100 C DYNAMIC 6.0 7.2 1275 1600 S VDS 2 VDS(on), ID = 6 A gfs Forward Transductance1 pF VGS = 0 Ciss Input Capacitance 6.0 9.0 1000 1600 S VDS 2 VDS(on), ID = 4 A pF VGS = 0 Coss Output Capacitance 550 800 pF VDS = 25 V Coss Output Capacitance 250 750 pF VDS = 25 V Crss Reverse Transfer Capacitance 160 300 pF f = 1 MHz Crss Reverse Transfer Capacitance 100 300 pF f = 1 MHz Td(on) Turn-On Delay Time 16 30 ns VDD = 30 V, ID @ 15 A Td(on) Turn-On Delay Time 17 30 ns VDD = 75 V, ID @ 10 A tr Rise Time 19 60 ns Rg = 5 W , RL = 2 W tr Rise Time 52 60 ns Rg = 5 W , RL = 7.3 W Td(off) Turn-Off Delay Time 42 80 ns Td(off) Turn-Off Delay Time 36 80 ns tf Fall Time 24 30 ns (MOSFET) switching times are essentially independent of operating temperature. tf Fall Time 30 60 ns (MOSFET) switching times are essentially independent of operating temperature. BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current -6 A (Body Diode) ISM trr Reverse Recovery Time IS Continuous Source Current G ISM the integral P-N - 2.5 V TC = 25 C, IS = -12 A, VGS = 0 VSD Diode Forward Voltage1 ns TJ = 150 C,IF = IS, trr Reverse Recovery Time Junction rectifier. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. Modified MOSPOWER D G - 25 A the integral P-N -2 V TC = 25 C, IS = -9 A, VGS = 0 (Body Diode) S dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. A symbol showing Source Current1 A 400 -4 (Body Diode) - 20 (Body Diode) Diode Forward Voltage1 D symbol showing Source Current1 VSD BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER Junction rectifier. 350 ns TJ = 150 C,IF = IS, dlF/ds = 100 A/ms S OM6413SP3 - OM6416SP3 2.1 ELECTRICAL CHARACTERISTICS: ELECTRICAL CHARACTERISTICS: ELECTRICAL CHARACTERISTICS: TC = 25 unless otherwise noted STATIC P/N OM6415SP3 TC = 25 unless otherwise noted STATIC P/N OM6416SP3 Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-Source Breakdown 400 BVDSS Drain-Source Breakdown 500 V Voltage ID = 250 mA VGS(th) Gate-Threshold Voltage IGSSF Gate-Body Leakage Forward 100 IGSSR Gate-Body Leakage Reverse -100 IDSS VGS = 0, 2.0 4.0 V V VGS = 0, V VDS = VGS, ID = 250 mA Voltage ID = 250 mA VDS = VGS, ID = 250 mA VGS(th) Gate-Threshold Voltage nA VGS = 20 V IGSSF Gate-Body Leakage Forward 100 nA VGS = 20 V nA VGS = - 20 V IGSSR Gate-Body Leakage Reverse - 100 nA VGS = - 20 V IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, 2.0 4.0 Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, TC = 100 C ID(on) On-State Drain Current1 2.5 VDS(on) Static Drain-Source On-State 2.35 2.75 TC = 100 C VDS 2 VDS(on), VGS = 10 V ID(on) V VGS = 10 V, ID = 2.5 A VDS(on) Static Drain-Source On-State Voltage1 0.47 0.55 VGS = 10 V, ID = 2.5 A RDS(on) Static Drain-Source On-State Resistance1 0.93 1.10 VGS = 10 V, ID = 2.5 A, 2.1 - 117 Resistance1 RDS(on) Static Drain-Source On-State Forward Transductance1 Ciss Input Capacitance 1150 1600 Coss Output Capacitance 165 450 pF Crss Reverse Transfer Capacitance 70 150 pF Td(on) Turn-On Delay Time 17 35 ns tr Rise Time 12 15 ns Td(off) Turn-Off Delay Time 45 90 ns tf Fall Time 30 35 ns 4.0 4.4 Continuous Source Current 0.8 0.85 VGS = 10 V, ID = 2 A 1.50 1.65 VGS = 10 V, ID = 2 A, TC = 100 C VDS 2 VDS(on), ID = 2.5 A gfs Forward Transductance1 pF VGS = 0 Ciss Input Capacitance 1225 1600 VDS = 25 V Coss Output Capacitance 200 350 pF VDS = 25 V f = 1 MHz Crss Reverse Transfer Capacitance 85 150 pF f = 1 MHz VDD = 175 V, ID @ 5 A Td(on) Turn-On Delay Time 17 35 ns VDD = 200 V, ID @ 4 A Rg = 5 W , RL = 35 W tr Rise Time 5 15 ns Rg = 5 W , RL = 49 W (MOSFET) switching times are essentially independent of operating temperature. Td(off) Turn-Off Delay Time 42 90 ns tf Fall Time 14 30 ns (MOSFET) switching times are essentially independent of operating temperature. - 2.5 A IS D Continuous Source Current G the integral P-N -2 V TC = 25 C, IS = -5 A, VGS = 0 VSD Diode Forward Voltage1 ns TJ = 150 C,IF = IS, trr Reverse Recovery Time Junction rectifier. ISM VDS 2 VDS(on), ID = 2 A VGS = 0 A Modified MOSPOWER G -8 A the integral P-N -2 V TC = 25 C, IS = -9 A, VGS = 0 Junction rectifier. 400 ns TJ = 150 C,IF = IS, dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. D symbol showing (Body Diode) S dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. -2 Source Current1 A 400 S pF (Body Diode) - 10 (Body Diode) 4.8 BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER symbol showing Source Current1 4.0 S 2.1 OM6413SP3 - OM6416SP3 (Body Diode) Reverse Recovery Time VGS = 10 V, ID = 2 A 3.4 S BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS trr V 3.2 DYNAMIC gfs Diode Forward Voltage1 VDS 2 VDS(on), VGS = 10 V Resistance1 TC = 100 C DYNAMIC VSD A Resistance1 RDS(on) Static Drain-Source On-State ISM 2.0 Voltage1 RDS(on) Static Drain-Source On-State IS On-State Drain Current1 A OM6413SP3 - OM6416SP3 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) OM6413 OM6414 OM6415 OM6416 Units VDS Parameter Drain-Source Voltage 100 200 400 500 V VDGR Drain-Gate Voltage (RGS = 1 M ) 100 200 400 500 V ID @ TC = 25C Continuous Drain Current 6 4 2.5 2 A IDM Pulsed Drain Current 30 25 20 15 A VGS Gate-Source Voltage 20 20 20 20 V PD @ TC = 25C Maximum Power Dissipation 50 50 50 50 W Junction To Case Linear Derating Factor 0.5 0.5 0.5 0.5 W/C Junction To Ambient Linear Derating Factor .020 .020 .020 .020 W/C 1 TJ Operating and Tstg Storage Temperature Range -55 to 125 Lead Temperature (1/16" from case for 5 secs.) 225 225 2.00 C/W -55 to 125 -55 to 125 -55 to 125 225 225 C C 1 Pulse Test: Pulse width 300 sec. Duty Cycle 2%. 2 Pan Head Screw, Non-Lubricated Threads THERMAL RESISTANCE RthJC Junction-to-Case RthJA Junction-to-Ambient 50 C/W Mounting Torque 3.0 LBF*IN 2.1 PD - POWER DISSIPATION (WATTS) POWER RATING Free Air Operation MECHANICAL OUTLINE 150 .240 MAX. 2.800 125 2.500 .150 100 .810 .115 .187 R 2 PLCS. .150 75 .075 R 2 PLCS. .405 50 .100 .300 MIN. 25 0 0 25 50 75 100 125 150 175 .400 .100 17 PLCS. .018 18 PLCS. TC - CASE TEMPERATURE (C) 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 .450 MIN. .010 .060