OM6413SP3 - International Rectifier

2.1 - 115

2.1

100V Thru 500V, Up to 6 Amp, Three Phase

MOSFET Half Bridge

4 11 R1

Supersedes 1 06 R0

THREE PHASE MOSFET HALF BRIDGE

IN A PLASTIC SIP PACKAGE

FEATURES

• Isolated High Density, Low Profile Package

• 6 MOSFETs Per Package

• Fast Switching, Low Drive Current

• Heat Sinkable

• Low RDS(on)

• P-Channel Also Available

DESCRIPTION

This series of three phase MOSFET half bridge products feature the latest advanced

MOSFET and packaging technology. They are ideally suited where small size, high

performance and high reliability are required in applications such as switching power

supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse

circuits.

OM6415SP3

OM6416SP3

OM6413SP3

OM6414SP3

PART NUMBER VDS RDS(on) ID(MAX)

OM6413SP3 100V .085 6A

OM6414SP3 200V .180 4A

OM6415SP3 400V .55 2.5A

OM6416SP3 500V .85 2A

SCHEMATIC PIN CONNECTION

1 3 4 5 6 9 10 11 12 14 15 16 17 18

MAXIMUM RATINGS (Per MOSFET)

Pin 1: VCC Pin 5: Source Pin 9: Gate Pin 13: N/C Pin 17: Drain/Source

Pin 2: N/C Pin 6: Drain/Source Pin 10: Gate Pin 14: Gate Pin 18: VCC

Pin 3: Gate Pin 7: N/C Pin 11: Source Pin 15: Gate

Pin 4: Gate Pin 8: N/C Pin 12: Drain/Source Pin 16: Source

Note: Pin 1 and Pin 18 are common

1357911131517

2 4 6 8 10 12 14 16 18

2.1 - 116

OM6413SP3 - OM6416SP3

2.1

ELECTRICAL CHARACTERISTICS: TC= 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: TC= 25° unless otherwise noted

STATIC P/N OM6413SP3 STATIC P/N OM6414SP3

Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source Breakdown 100 V VGS = 0, BVDSS Drain-Source Breakdown 200 V VGS = 0,

Voltage ID= 250 mA Voltage ID= 250 mA

VGS(th) Gate-Threshold Voltage 2.0 4.0 V VDS = VGS, ID= 250 mAV

GS(th) Gate-Threshold Voltage 2.0 4.0 V VDS = VGS,ID= 250 mA

IGSSF Gate-Body Leakage Forward 100 nA VGS = 20 V IGSSF Gate-Body Leakage Forward 100 nA VGS = 20 V

IGSSR Gate-Body Leakage Reverse -100 nA VGS = - 20 V IGSSR Gate-Body Leakage Reverse - 100 nA VGS = - 20 V

IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0

Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,

TC= 100° C TC= 100° C

ID(on) On-State Drain Current16AV

DS 2 VDS(on), VGS = 10 V ID(on) On-State Drain Current14AV

DS 2 VDS(on), VGS = 10 V

VDS(on) Static Drain-Source On-State 1.275 1.425 V VGS = 10 V, ID= 6 A VDS(on) Static Drain-Source On-State 1.4 1.8 V VGS = 10 V, ID= 4 A

Voltage1Voltage1

RDS(on) Static Drain-Source On-State .085 .095 VGS = 10 V, ID= 6 A RDS(on) Static Drain-Source On-State 0.14 0.18 VGS = 10 V, ID= 4 A

Resistance1Resistance1

RDS(on) Static Drain-Source On-State .130 .155 VGS = 10 V, ID= 6 A, RDS(on) Static Drain-Source On-State 0.28 0.36 VGS = 10 V, ID= 4 A,

Resistance1TC= 100 C Resistance1TC= 100 C

DYNAMIC DYNAMIC

gfs Forward Transductance16.0 7.2 S VDS 2 VDS(on), ID= 6 A gfs Forward Transductance16.0 9.0 S VDS 2 VDS(on), ID= 4 A

Ciss Input Capacitance 1275 1600 pF VGS = 0 Ciss Input Capacitance 1000 1600 pF VGS = 0

Coss Output Capacitance 550 800 pF VDS = 25 V Coss Output Capacitance 250 750 pF VDS = 25 V

Crss Reverse Transfer Capacitance 160 300 pF f = 1 MHz Crss Reverse Transfer Capacitance 100 300 pF f = 1 MHz

Td(on) Turn-On Delay Time 16 30 ns VDD = 30 V, ID@15 A Td(on) Turn-On Delay Time 17 30 ns VDD = 75 V, ID@10 A

trRise Time 19 60 ns Rg= 5 W, RL= 2 WtrRise Time 52 60 ns Rg= 5 W, RL= 7.3 W

Td(off) Turn-Off Delay Time 42 80 ns Td(off) Turn-Off Delay Time 36 80 ns

tfFall Time 24 30 ns tfFall Time 30 60 ns

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

ISContinuous Source Current - 6 A Modified MOSPOWER ISContinuous Source Current - 4 A Modified MOSPOWER

(Body Diode) symbol showing (Body Diode) symbol showing

ISM Source Current1- 20 A the integral P-N ISM Source Current1- 25 A the integral P-N

(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.

VSD Diode Forward Voltage1- 2.5 V TC= 25 C, IS= -12 A, VGS = 0 VSD Diode Forward Voltage1- 2 V TC= 25 C, IS= -9 A, VGS = 0

trr Reverse Recovery Time 400 ns TJ= 150 C,IF= IS,t

rr Reverse Recovery Time 350 ns T J= 150 C,IF= IS,

dlF/ds = 100 A/ms dlF/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

(MOSFET) switching times are

essentially independent of

operating temperature.

(MOSFET) switching times are

essentially independent of

operating temperature.

2.1 - 117

OM6413SP3 - OM6416SP3

2.1

ELECTRICAL CHARACTERISTICS: TC= 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: TC= 25° unless otherwise noted

STATIC P/N OM6415SP3 STATIC P/N OM6416SP3

Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source Breakdown 400 V VGS = 0, BVDSS Drain-Source Breakdown 500 V VGS = 0,

Voltage ID= 250 mA Voltage ID= 250 mA

VGS(th) Gate-Threshold Voltage 2.0 4.0 V VDS = VGS, ID= 250 mAV

GS(th) Gate-Threshold Voltage 2.0 4.0 V VDS = VGS,ID= 250 mA

IGSSF Gate-Body Leakage Forward 100 nA VGS = 20 V IGSSF Gate-Body Leakage Forward 100 nA VGS = 20 V

IGSSR Gate-Body Leakage Reverse -100 nA VGS = - 20 V IGSSR Gate-Body Leakage Reverse - 100 nA VGS = - 20 V

IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0

Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,

TC= 100° C TC= 100° C

ID(on) On-State Drain Current12.5 A VDS 2 VDS(on), VGS = 10 V ID(on) On-State Drain Current12.0 A VDS 2 VDS(on), VGS = 10 V

VDS(on) Static Drain-Source On-State 2.35 2.75 V VGS = 10 V, ID= 2.5 A VDS(on) Static Drain-Source On-State 3.2 3.4 V VGS = 10 V, ID= 2 A

Voltage1Voltage1

RDS(on) Static Drain-Source On-State 0.47 0.55 VGS = 10 V, ID= 2.5 A RDS(on) Static Drain-Source On-State 0.8 0.85 VGS = 10 V, ID= 2 A

Resistance1Resistance1

RDS(on) Static Drain-Source On-State 0.93 1.10 VGS = 10 V, ID= 2.5 A, RDS(on) Static Drain-Source On-State 1.50 1.65 VGS = 10 V, ID= 2 A,

Resistance1TC= 100 C Resistance1TC= 100 C

DYNAMIC DYNAMIC

gfs Forward Transductance14.0 4.4 S VDS 2 VDS(on), ID= 2.5 A gfs Forward Transductance14.0 4.8 S VDS 2 VDS(on), ID= 2 A

Ciss Input Capacitance 1150 1600 pF VGS = 0 Ciss Input Capacitance 1225 1600 pF VGS = 0

Coss Output Capacitance 165 450 pF VDS = 25 V Coss Output Capacitance 200 350 pF VDS = 25 V

Crss Reverse Transfer Capacitance 70 150 pF f = 1 MHz Crss Reverse Transfer Capacitance 85 150 pF f = 1 MHz

Td(on) Turn-On Delay Time 17 35 ns VDD = 175 V, ID@5 A Td(on) Turn-On Delay Time 17 35 ns VDD = 200 V, ID@4 A

trRise Time 12 15 ns Rg= 5 W, RL= 35 WtrRise Time 5 15 ns Rg= 5 W, RL= 49 W

Td(off) Turn-Off Delay Time 45 90 ns Td(off) Turn-Off Delay Time 42 90 ns

tfFall Time 30 35 ns tfFall Time 14 30 ns

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

ISContinuous Source Current - 2.5 A Modified MOSPOWER ISContinuous Source Current - 2 A Modified MOSPOWER

(Body Diode) symbol showing (Body Diode) symbol showing

ISM Source Current1- 10 A the integral P-N ISM Source Current1- 8 A the integral P-N

(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.

VSD Diode Forward Voltage1- 2 V TC= 25 C, IS= -5 A, VGS = 0 VSD Diode Forward Voltage1- 2 V TC= 25 C, IS= -9 A, VGS = 0

trr Reverse Recovery Time 400 ns TJ= 150 C,IF= IS,t

rr Reverse Recovery Time 400 ns T J= 150 C,IF= IS,

dlF/ds = 100 A/ms dlF/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

(MOSFET) switching times are

essentially independent of

operating temperature.

(MOSFET) switching times are

essentially independent of

operating temperature.

OM6413SP3 - OM6416SP3

2.1

205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246

ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted)

Parameter OM6413 OM6414 OM6415 OM6416 Units

VDS Drain-Source Voltage 100 200 400 500 V

VDGR Drain-Gate Voltage (RGS = 1 M ) 100 200 400 500 V

ID@ TC= 25°C Continuous Drain Current ± 6 ± 4 ± 2.5 ± 2 A

IDM Pulsed Drain Current1± 30 ± 25 ± 20 ± 15 A

VGS Gate-Source Voltage ± 20 ± 20 ± 20 ± 20 V

PD@ TC= 25°C Maximum Power Dissipation 50 50 50 50 W

Junction To Case Linear Derating Factor 0.5 0.5 0.5 0.5 W/°C

Junction To Ambient Linear Derating Factor .020 .020 .020 .020 W/°C

TJOperating and

Tstg Storage Temperature Range -55 to 125 -55 to 125 -55 to 125 -55 to 125 °C

Lead Temperature (1/16" from case for 5 secs.) 225 225 225 225 °C

1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.

2 Pan Head Screw, Non-Lubricated Threads

THERMAL RESISTANCE

RthJC Junction-to-Case 2.00 °C/W

RthJA Junction-to-Ambient 50 °C/W Free Air Operation

Mounting Torque 3.0 LBF•IN

POWER RATING MECHANICAL OUTLINE

.100

17 PLCS.

.300 MIN.

.400

.405

2.800

2.500

.810 .187 R

2 PLCS.

.075 R

2 PLCS.

.150

.010

.060

.115

.240

MAX.

.450

MIN.

.018

18 PLCS.

0 25 50 75 100 125 150 175

PD - POWER DISSIPATION (WATTS)

TC- CASE TEMPERATURE (°C)

150

125

100