a | TELEFUNKEN ELECTRONIC L7E D MM 8920096 0009403 1 MBALGG yr . . . . TELEFUNKEN electronic BF 420S - BF 4225S Creative Technologies + Silicon NPN Epitaxial Planar RF Transistors T- 31-23 Applications: Video B-class power stages in TV-receivers Features: @ BF 420S complementary to BF 421S @ BF 422S complementary to BF 4238 @ No heg rift dependent of temperature Dimensions in mm i fechnical drawings according to DIN OT - speciicebone ! _ 2.8 8 aes #82 Standard plastic case E : 1043 DIN 41868 ry JEDEC TO 922 Weight max. 0.5 g : Absolute maximum ratings BF 420S BF422S j Collector-base voltage Vogo 300 250 Vv Collector-emitter voltage Voeo 300 250 Vv 4 Emitter-base voltage Veno 5 Vv Collector current Ip 25 mA Collector peak current long 100 ~ mA . . Total power dissipation Piya 150 K/W, Ty ny S25 OC Prot 830 mw - Junction temperature Tj 150 2 Storage temperature range Ty 65,..4150 C Maximum thermal resistances Min. Typ. Max. Junction ambient {3 mm,on copper cooling area 210 mmx10 mm with 35 ym thickness Pua 150 K/w T1.2/1014.0888 E 2540 6-01 . 19a TELEFUNKEN ELECTRONIC BF 4205 - BF 4228 Characteristics Tomb = 25 C, unless otherwise specified Collector cut-off current Veg = 250 V ; BF 420S Veg = 200 V BF 4228S Vog = 200 V. Fae = 2.7 kQ, T= 160C Emitter cut-off current Vag = 5 V Collector-base breakdown voltage {,= 10 pA BF 420S BF 422S Collector-emitter breakdown voltage L=1mA BF 420S BF 4228S DC forward current transfer ratio Veg = 20 VI, =25 mA Gain bandwidth product Vog= 10 V, i, =10mA Feedback capacitance Vog = 30 V, =O, f= 1.0 MHz Feedback time constant Von = 20 V, J = 10 mA, f= 10.7 MHz Collector saturation RF voltage i, = 26 mA, T= 150C 20 2541 6~02 L7E D MM 89200564 o0094o4 3 MEALGG Ieso Iso Ioen leso Viericeo {BR)CBO Vieryceo {8R)CEO Mee f, Cree low Cre VoesathF 300 250 300 250 50 60 90 1.0 20 Max. 50 50 10 10 1.6 70 T-3/-23 Typ. nA pA yA: MHz pF ps math eaein | TELEFUNKEN ELECTRONIC L7E D a9200%b o009405 5 MMALGG BF 420S- BF 422S THF 1-235 Rot '800 mW 600 ~ 400 : 200 i { 0 : Tamb : Yoe=30V 20V 10V 2542 6-03 21oe ee = ee I TELEFUNKEN ELECTRONIC L7E D M@ 4920056 oooquok ? MBALGG BF 420S- BF 422S | F TP1-23 | f sasoss ec Ci2e t rentals ned et aptacntomat: Tamb25 C 4 pF 100 MHz be eh reenetne Dpatennn yo tab Ay memento 10 Oo 20 30V 1 Aamet aank 4 tetartn Ne dante am eration etennaanatmetee it 4 ete ee ey 225543 = G04TELEFUNKEN ELECTRONIC = =617E D Ml 8920056 0005380 4 MmMALGG @ Family ofcurves _ . ] 1 -20 Besides the static (d. .) and dynamic {a. c.) charac- paste ao AEG CORP teristics, family of curves are given for specified = operating conditions. They show the typical inter- depedence of individual characteristics. Partly are given the scattering limits. They signify that at least 95% of the delivery lies inside these tolerances. . 6.6. Additional informations Preliminary specifications This heading indicates that some information on the device concerned maybe subject to slight chan- ges. Not for new developments This heading indicates that the device concerned should not be used in equipment under develop- ment, it is, however, available for prasent produc- tion. "7. Taping and reeling 7.1. Taping of TO-92 transistors Standard reeling: Taped on reel, reeled together with a paper film. 7.1.1, Order Numbers Add the taping-code to the order number. Example: 1 BC238C DU 06} t Zz Order-No. of Type Code for TO-92 Transistors | Orientation of transistor on tape "? Additional marking for specials 2) 1 06 = View on flat side of transistor, view on gummed tape O5 = View on round side of transistor, view on gummed tape 9) Additional marking O" : Taping without paper film Additional marking 2: Zigzag folded tape inspecial box. Marking for orientation of transistor not necessary, because box can be opened on top or botton. Example for order No.: BC 237C DUZ 2517 E~06 144 Fig. 7.1, Dimensions of reel in mm ensasee Fig. 7.2. Dimension of box for Zigzag folding inmm weap wane Fig. 7.3. Dimensions of tape in mm 7.1.2 Quantity of devices 1000 devices per reel 2.000 devices per folded tape in special box. 7.2 Taped transistors in SOT 23 and SOT 143 case a) Standard taping Designation is attached with code GS 08 in case of standard taping. Example for normal version transistors as standard taped: BF 569- Gsos. Example for R-version transistors as standard taped: BF 569 R-GS 08. In case of standard taping, the transistor orienta- tion on the tape is shown in Fig. 7.4 and Fig. 7.5. rece fe ee 8 ereemrernntate aint me weeds fb petamense tie dimer SmaI hs ene aay ee pepe AQ ee htI = L7E D Mm 492005. De-resiing direction oacnsee Fig. 7.4 Standard taped SOT 23 ensesee 0009381 & BMALGG | Fig. 7.6 Reverse taped SOT 23 -De-reating direction . 18 1 ' sue Se ee Sy Cn raccn accanynd | ra 1g pot Liwod ot J YH aap eh aL Brus 17 writen aimee eet tm wade | e + LTGser i wtb = eats a we] asus { _ ea sO 3095 }) 208 estas Lassa] BSSEE soa || Fig. 7.6 Standard taped SOT 143 Fig. 7.7 Dimensions of tape in mm : b} Reverse taping : Desigantionis attached with codeGS07 incase veuene of reverse taping. Example for normal version ast ase 5 transistors as reverse taped: BF 569 R-GS 07. . ae 3 Example for R-version transistors as reverse ta- y | soeant : ing: BF 569 R-GS 07. asae : ping Vg Sy, i In case of reverse taping, the transistor orientation HL $F ataus : on the tape is shown in Fig. 6. Cees, a Regarding MOF-FET and MES-FET devices, reverse + te ~ 3 taping is at present not available. j 300. iszgt . Fig. 7.8 Dimensions of reel in mm 7.2.2 Quantity of devices 8. Assessories 3000 devices per ree! Number Fig. Designation For case 119880 8.1. Isolating washer thickness 60 pm 12A3 DIN 41869 JEDEC TO 126 (SOT 32) 564542 8.2. Isolating washer thickness 50 pm 14A3 DIN 41 869 - JEDEC TO 220 (SOT 78) 912884 83 Isolating washer thickness 50 pm 15A3 DIN 41869 (TOP 3) for clip mounting 191131 8.4 Isolating washer thickness 50 pm 15A 3 DIN 41869 (TOP 3) for screw mounting 191140 8.5 Mounting clip 15A3 DIN 41869 (TOP3) 669624 8.6 lsolating washer thickness 100 pm +50um 38 2 DIN 41872 JEDEC TO 3 Devices with high reverse voltage E-07 A28 2518 v