polyfet rf devices SK702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 90.0 Watts Push - Pull Package Style AK TM "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 190 Watts o 0.85 C/W Maximum Junction Temperature o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL Gps VSWR PARAMETER MIN Common Source Power Gain TYP 11.5 A MAX 55 Load Mismatch Tolerance Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V 90.0 WATTS OUTPUT ) 10 Drain Efficiency Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz % Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz Relative Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS V 65 TEST CONDITIONS Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 2.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 7 V Ids = 0.20 A, Vgs = Vds gM Forward Transconductance Rdson Saturation Resistance Idsat 1 Ids = 40.00 mA, Vgs = 0V 2.4 Mho Vds = 10V, Vgs = 5V 0.50 Ohm Vgs = 20V, Ids = 5.00 A Saturation Current 14.00 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 100.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 6.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 64.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/28/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com SK702 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE SK702 F=500MHZ, VDS=28V, Idq=.8A S1A 2 DICE CAPACITANCE 110 13 1000 100 90 12 80 Efficiency = 55% 70 Ciss Pout 100 11 60 Coss 50 10 Gain 40 10 30 9 20 Crss 10 0 8 0 2 4 6 8 10 12 14 1 16 0 PIN IN WATTS 5 10 15 20 25 30 VDS IN VOLTS IV CURVE ID & GM VS VGS S1A 2 DIE IV S1A 2 DIE ID & GM Vs VG 100.00 Id in amps; Gm in mhos 16 14 ID IN AMPS 12 Id 10.00 10 8 1.00 6 4 gM 2 0.10 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDSINVOLTS vg=8v Vg=6v 14 16 0 18 vg=12v 20 0 2 Zin Zout 4 6 8 Vgs in Volts 10 12 14 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 03/28/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com