Order this document by BC517/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 1 BASE 2 EMITTER 3 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit VCES 30 Vdc Collector - Base Voltage VCB 40 Vdc Emitter - Base Voltage Collector - Emitter Voltage CASE 29-04, STYLE 17 TO-92 (TO-226AA) VEB 10 Vdc Collector Current -- Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25C Derate above 25C PD 625 12 mW mW/C Total Power Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg - 55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector - Emitter Breakdown Voltage (IC = 2.0 mAdc, VBE = 0) V(BR)CES 30 -- -- Vdc Collector - Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 40 -- -- Vdc Emitter - Base Breakdown Voltage (IE = 100 nAdc, IC = 0) V(BR)EBO 10 -- -- Vdc Collector Cutoff Current (VCE = 30 Vdc) ICES -- -- 500 nAdc Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO -- -- 100 nAdc Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO -- -- 100 nAdc OFF CHARACTERISTICS Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 BC517 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Typ Max Unit hFE 30,000 -- -- -- Collector - Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) -- -- 1.0 Vdc Base - Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) VBE(on) -- -- 1.4 Vdc fT -- 200 -- MHz Characteristic ON CHARACTERISTICS(1) DC Current Gain (IC = 20 mAdc, VCE = 2.0 Vdc) SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 2. fT = |hfe| * ftest v 2.0%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data BC517 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 500 2.0 BANDWIDTH = 1.0 Hz RS 0 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 200 BANDWIDTH = 1.0 Hz 100 10 A 50 100 A 20 IC = 1.0 mA 10 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 A 0.1 0.07 0.05 10 A 0.03 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 0.02 10 20 50 k 100 k 50 100 200 50 k 100 k Figure 3. Noise Current 200 14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) IC = 10 A 70 50 100 A 30 20 1.0 mA 10 1.0 2.0 10 10 A 8.0 100 A 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) 500 100 0 Figure 4. Total Wideband Noise Voltage Motorola Small-Signal Transistors, FETs and Diodes Device Data 0 1.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) 500 100 0 Figure 5. Wideband Noise Figure 3 BC517 SMALL-SIGNAL CHARACTERISTICS 20 |h fe |, SMALL-SIGNAL CURRENT GAIN 4.0 TJ = 25C C, CAPACITANCE (pF) 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 200 k hFE, DC CURRENT GAIN TJ = 125C 25C 30 k 20 k 10 k 7.0 k 5.0 k - 55C VCE = 5.0 V 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 RV, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 0.8 VCE(sat) @ IC/IB = 1000 0.6 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 10. "On" Voltages 4 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 TJ = 25C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A) 500 1000 Figure 9. Collector Saturation Region 1.6 10 2.0 3.0 Figure 8. DC Current Gain 5.0 7.0 1.0 Figure 7. High Frequency Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 100 k 70 k 50 k VCE = 5.0 V f = 100 MHz TJ = 25C 500 - 1.0 - 2.0 *APPLIES FOR IC/IB hFE/3.0 25C TO 125C *RqVC FOR VCE(sat) - 55C TO 25C - 3.0 25C TO 125C - 4.0 qVB FOR VBE - 5.0 - 55C TO 25C - 6.0 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 Figure 11. Temperature Coefficients Motorola Small-Signal Transistors, FETs and Diodes Device Data BC517 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE ZJC(t) = r(t) * RJC TJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 300 200 FIGURE A 1.0 ms tP TA = 25C TC = 25C 100 s PP 1.0 s 100 70 50 PP t1 30 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 0.4 0.6 1/f DUTY CYCLE 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area 40 + t1 f + ttP1 PEAK PULSE POWER = PP Design Note: Use of Transient Thermal Resistance Data Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 BC517 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X-X N N CASE 029-04 (TO-226AA) ISSUE AD DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data BC517/D