1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCES 30 Vdc
Collector–Base Voltage VCB 40 Vdc
Emitter–Base Voltage VEB 10 Vdc
Collector Current — Continuous IC1.0 Adc
Total Power Dissipation @ TA = 25°C
Derate above 25°CPD625
12 mW
mW/°C
Total Power Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to
Ambient R
q
JA 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 2.0 mAdc, VBE = 0) V(BR)CES 30 — — Vdc
Collector–Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0) V(BR)CBO 40 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 100 nAdc, IC = 0) V(BR)EBO 10 — — Vdc
Collector Cutoff Current
(VCE = 30 Vdc) ICES — — 500 nAdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0) ICBO — — 100 nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0) IEBO — — 100 nAdc
Order this document
by BC517/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR 1
BASE
2
EMITTER 3
BC517
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 20 mAdc, VCE = 2.0 Vdc) hFE 30,000 — — —
Collector–Emitter Saturation V oltage
(IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) — — 1.0 Vdc
Base–Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc) VBE(on) — — 1.4 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT— 200 — MHz
1. Pulse Test: Pulse Width
v
2.0%.
2. fT = |hfe|• ftest
RSin
enIDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
BC517
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
Figure 2. Noise Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
Figure 3. Noise Current
f, FREQUENCY (Hz)
Figure 4. Total Wideband Noise Voltage
RS, SOURCE RESISTANCE (k
Ω
)
Figure 5. Wideband Noise Figure
RS, SOURCE RESISTANCE (k
Ω
)
5.0
50
70
100
200
30
10
20
1.0
10
10
20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
RS
≈
0
IC = 1.0 mA
100
µ
A
10
µ
A
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100
µ
A
10
µ
A
en, NOISE VOLTAGE (nV)
in, NOISE CURRENT (pA)
2.0 5.0 10 20 50 100 200 500 100
0
BANDWIDTH = 10 Hz TO 15.7 kHz
IC = 10
µ
A
100
µ
A
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0 2.0 5.0 10 20 50 100 200 500 100
0
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10
µ
A
100
µ
A
IC = 1.0 mA
VT, T OTAL WIDEBAND NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
BC517
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
SMALL–SIGNAL CHARACTERISTICS
Figure 6. Capacitance
VR, REVERSE VOLTAGE (VOL TS)
5.0
7.0
10
20
3.0
Figure 7. High Frequency Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
IB, BASE CURRENT (
µ
A)
2.0
200 k
5.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
TJ = 25
°
C
C, CAPACITANCE (pF)
1.5
2.0
2.5
3.0
1.0
0.5
|hfe|, SMALL–SIGNAL CURRENT GAIN
hFE, DC CURRENT GAIN
VCE, COLLECTOR–EMITTER VOLTAGE (VOL TS)
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
Cibo
Cobo
0.5 1.0 2.0 0.5 10 20 50 100 200 500
VCE = 5.0 V
f = 100 MHz
TJ = 25
°
C
100 k
70 k
50 k
30 k
20 k
10 k
7.0 k
5.0 k
3.0 k
2.0 k 7.0 10 20 30 50 70 100 200 300 500
TJ = 125
°
C
25
°
C
–55
°
CVCE = 5.0 V
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
TJ = 25
°
C
IC = 10 mA 50 mA 250 mA 500 mA
Figure 10. “On” Voltages
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
1.6
5.0
–1.0
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6 7.0 10 20 30 50 70 100 200 300 500
VBE(sat) @ IC/IB = 1000
RV, TEMPERATURE COEFFICIENTS (mV/ C)
°
θ
TJ = 25
°
C
VBE(on) @ VCE = 5.0 V
VCE(sat) @ IC/IB = 1000
–2.0
–3.0
–4.0
–5.0
–6.05.0 7.0 10 20 30 50 70 100 200 300 500
25
°
C TO 125
°
C
–55
°
C TO 25
°
C
*R
q
VC FOR VCE(sat)
q
VB FOR VBE
25
°
C TO 125
°
C
–55
°
C TO 25
°
C
*APPLIES FOR IC/IB
≤
hFE/3.0
BC517
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 12. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
2.0 5.01.00.50.20.1
RESIST ANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01 20 5010 200 500100 1.0 k 2.0 k 5.0 k 10 k
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0 k
0.4
700
500
300
200
100
70
50
30
20
10 0.6 1.0 2.0 4.0 6.0 10 20 40
IC, COLLECTOR CURRENT (mA)
TA = 25
°
C
D = 0.5
0.2
0.1 0.05 SINGLE PULSE
SINGLE PULSE
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
Z
θ
JC(t) = r(t)
•
R
θ
JC TJ(pk) – TC = P(pk) Z
θ
JC(t)
Z
θ
JA(t) = r(t)
•
R
θ
JA TJ(pk) – TA = P(pk) Z
θ
JA(t)
1.0 ms
100
µ
s
TC = 25
°
C
1.0 s
Design Note: Use of Transient Thermal Resistance Data
FIGURE A
tP
PPPP
t1
1/f
DUTY CYCLE
+
t1f
+
t1
tP
PEAK PULSE POWER = PP
BC517
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA/EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center , 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: RMF AX0@email.sps.mot.com – T OUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com 5 1 Ti ng Ko k Road, Tai Po, N.T., Hong Kong. 852–26629298
BC517/D
◊
