IMAGE SENSOR
CCD area image sensor
1024 × 1024 pixels, front-illuminated FFT-CCDs
S9737 series
S9737 series is a family of FFT-CCD area image sensors specifically designed for low-light-level detection in scientific applications. S9737 series
also features low noise and low dark current (MPP mode operation). These enable low-light-level detection and long integration time, thus
achieving a wide dynamic range.
Three different packages (ceramic DIP, metal, plate type) are provided. Metal package type (S9737-02) has a four-stage TE-cooled element built
into the same package for thermoelectric cooling. At room temperature operation, the device can be cooled down to -70 ˚C with using forced air
cooling. In addition, since both the CCD chip and TE-cooled element are hermetically sealed, no dry air is required, thus allowing easy handling.
Features
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1024 (H) × 1024 (V) pixel format
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Pixel size: 12 × 12 µm
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100 % fill factor
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Wide dynamic range
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Low dark current
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Low readout noise
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MPP operation
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3 types of packages are available
Applications
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Astronomy
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Scientific measuring instrument
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Fluorescence spectrometer
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Raman spectrophotometer
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Optical and spectrophotometric analyzer
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For low-light-level detection requiring
■ General ratings
Parameter S9737-01 S9737-02 S9737-03
CCD structure Full frame transfer
Fill factor 100 %
Number of active pixels 1024 (H) × 1024 (V)
Pixel size 12 (H) × 12 (V) µm
Active area 12.288 (H) × 12.288 (V) mm
Vertical clock phase 2 phase
Horizontal clock phase 2 phase
Output circuit One-stage MOSFET source follower
Cooling Non-cooled Four-stage TE-cooled Non-cooled
Package 24-pin ceramic DIP 28-pin metal package Plate type
Window None (covered with tape) AR coated Sapphire None
1
CCD area image sensor
S9737 series
■ Absolute maximum ratings (Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Operating temperature Topr -50 - +30 °C
Storage temperature Tstg -50 -+70 °C
CCD cooling temperature - -70 - +30 °C
OD voltage VOD -0.5 -+25 V
RD voltage VRD -0.5 - +18 V
ISV voltage VISV -0.5 -+18 V
ISH voltage VISH -0.5 - +18 V
IGV voltage VIG1V, VIG2V -15 -+15 V
IGH voltage VIG1H, VIG2H -15 - +15 V
SG voltage VSG -15 -+15 V
OG voltage VOG -15 - +15 V
RG voltage VRG -15 -+15 V
TG voltage VTG -15 - +15 V
Vertical clock voltage VP1V, VP2V -15 -+15 V
Horizontal clock voltage VP1H, VP2H -15 - +15 V
■ Operating conditions (MPP mode, Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Output transistor drain voltage VOD 18 20 22 V
Reset drain voltage VRD 12 13 14 V
Output gate voltage VOG -0.5 2 - V
Substrate voltage VSS - 0 - V
Test point (vertical input source) VISV -V
RD -V
Test point (horizontal input source) VISH - VRD - V
Test point (vertical input gate) VIG1V, VIG2V -8 0 - V
Test point (horizontal input gate) VIG1H, VIG2H -8 0 - V
High VP1VH, VP2VH 036
Vertical shift register
clock voltage Low VP1VL, VP2VL -9 -8 -7 V
High VP1HH, VP2HH 036
Horizontal shift register
clock voltage Low VP1HL, VP2HL -9 -8 -7 V
High VSGH 036
Summing gate voltage Low VSGL -9 -8 -7 V
High VRGH 036
Reset gate voltage Low VRGL -9 -8 -7 V
High VTGH 036
Transfer gate voltage Low VTGL -9 -8 -7 V
■ Electrical characteristics (Ta=25 °C)
Parameter Symbol Remark Min. Typ. Max. Unit
Signal output frequency fc - - 0.1 1 MHz
Vertical shift register capacitance CP1V, CP2V - - 6000 -pF
Horizontal shift register capacitance CP1H, CP2H - - 200 - pF
Summing gate capacitance CSG - - 5 - pF
Reset gate capacitance CRG -- 5 -pF
Transfer gate capacitance CTG - - 50 -pF
Transfer efficiency CTE *10.99995 0.99999 - -
DC output level Vout *212 15 18 V
Output impedance Zo *2-3-k
Ω
Power dissipation P *2, *3-15 -mW
*1: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*2: The values depend on the load resistance. (VOD=20 V, Load resistance=22 kΩ)
*3: Power dissipation of the on-chip amplifier.
2
CCD area image sensor
S9737 series
■Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter Symbol Remark Min. Typ. Max. Unit
Saturation output voltage Vsat - - Fw × Sv - V
Vertical 30 60 -
Full well
capacity Horizontal Fw --72 -ke-
CCD node sensitivity Sv *4-4.5-µV/e
-
+25 °C -100 1500
0 °C - 5 75
Dark current
(MPP mode) -70 °C
DS *5
-0.0005 0.005
e-/pixel/s
Readout noise Nr *6-418e
-rms
Dynamic range (Area scanning) *7-15000 - -
Spectral response range λ- - 400 to 1100 - nm
Photo response non-uniformity PRNU *8- - ±10 %
Point defects *9--0
Cluster defects *10 --0Blemish
Column defects
-
*11 --0
-
*4: VOD=20 V , Load resistance=22 kΩ
*5: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*6: -40 °C, operating frequency is 80 kHz.
*7: DR = Fw / Nr
*8: Measured at half of the full well capacity. PRNU = noise / signal × 100 [%], noise: fixed pattern noise (peak to peak)
*9: White spots > 3 % of full well at 0 °C after Ts=1 s, Black spots > 50 % reduction in response relative to adjacent pixels
*10: A group of 2 to 9 continuous point defects
*11: A group of 10 or more continuous point defects
■ Pin connections (S9737-01)
Pin No. Symbol Description Remark
1 RG Reset gate -
2RD Reset drain -
3 OS Output source -
4OD Output transistor drain -
5 OG Output gate -
6SG Summing gate -
7 P2H CCD horizontal register clock-2 -
8NC No connection -
9 P1H CCD horizontal register clock-1 -
10 NC No connection -
11 IG2H Test point (horizontal input gate-2) Shorted to ground
12 IG1H Test point (horizontal input gate-1) Shorted to ground
13 ISH Test point (horizontal input source) Shorted to RD
14 TG Transfer gate -
15 P2V CCD vertical register clock-2 -
16 NC No connection -
17 P1V CCD vertical register clock-1 -
18 NC No connection -
19 NC No connection -
20 SS Substrate (GND) -
21 NC No connection -
22 ISV Test point (vertical input source) Shorted to RD
23 IG2V Test point (vertical input gate-2) Shorted to ground
24 IG1V Test point (vertical input gate-1) Shorted to ground
3
CCD area image sensor
S9737 series
4
■ Pin connections (S9737-02)
Pin No. Symbol Description Remark
1 P- TE-cooler-
2NC
3 SS Substrate (GND)
4NC
5 ISV Test point (vertical input source) Shorted to RD
6IG2V Test point (vertical input gate-2) Shorted to 0 V
7 IG1V Test point (vertical input gate-1) Shorted to 0 V
8RG Reset gate
9 RD Reset drain
10 OS Output transistor source
11 OD Output transistor drain
12 OG Output gate
13 SG Summing gate Same timing as P2H
14 P+ TE-cooler+
15 TSH1 Temperature sensor (hot side)
16 TSC1 Temperature sensor (cool side)
17 TSC2 Temperature sensor (cool side)
18 P2H CCD horizontal register clock-2
19 P1H CCD horizontal register clock-1
20 IG2H Test point (horizontal input gate-2) Shorted to 0 V
21 IG1H Test point (horizontal input gate-1) Shorted to 0 V
22 ISH Test point (horizontal input source) Shorted to RD
23 P2V CCD vertical register clock-2
24 P1V CCD vertical register clock-1
25 TG Transfer gate Same timing as P2V *12
26 NC
27 NC
28 TSH2 Temperature sensor (hot side)
■ Pad connections (S9737-03)
Pad No. Symbol Description Remark
1 RG Reset gate
2RD Reset drain
3 OS Output transistor source
4OD Output transistor grain
5 OG Output gate
6SG Summing gate
7NC
8NC
9 P2H CCD horizontal register clock-2
10 P1H CCD horizontal register clock-1
11 IG2H Test point (horizontal input gate-2)
12 IG1H Test point (horizontal input gate-1)
13 ISH Test point (horizontal input source)
14 P2V CCD vertical resister clock-2
15 P1V CCD vertical resister clock-1
16 TG Transfer gate Same timing as P2V*12
17 NC
18 NC
19 NC
20 SS Substrate (GND)
21 NC
22 ISV Test point (vertical input source)
23 IG2V Test point (vertical input gate-2)
24 IG1V Test point (vertical input gate-1)
*12: TG is an isolation gate between vertical register and horizontal register.
In standard operation, the same pulse of P2V should be applied to the TG.
CCD area image sensor
S9737 series
50
40
30
20
10
0
400 500 600 700
WAVELENGTH (nm)
800 900 1000 1100 1200
QUANTUM EFFICIENCY (%)
(Typ. Ta=25 ˚C)
KMPDB0244EA
■ Spectral response (without window)
100 (Typ. Ta=25 ˚C)
95
90
85
80
400 500 600 700 800
WAVELENGTH (nm)
TRANSMITTANCE (%)
900 1000 1100 1200
AR COATED SAPPHIRE
KMPDB0106EA
■ Dimensional outlines (unit: mm)
■ Spectral transmittance characteristics
of window material
5
KMPDA0140EB
1.27
3.0 2.4
12.288
22.73 ± 0.3
23.11 ± 0.3
22.86 ± 0.3
1.3 ± 0.3
2.54
30.48 ± 0.3 12
1324
12.288
27.0
R1.2
PHOTOSENSITIVE
SURFACE
PIN No. 1
S9737-02
2
3
12
13
14
27
26
17
16
15
28
12.288
35.0
47.0
36.0
44.0
50.0
20.0
12.288
4.0 1.0
PIN No. 1
PINCHED
OFF TUBE
1st PIN INDEX
MARK 7.0
5.0
2.54 0.46
27.94
50.8
18.5 ± 0.5
6.3 ± 0.5
AR-COATED
SAPPHIRE WINDOW
FOUR-STAGE TE-COOLER
PHOTOSENSITIVE SURFACE
KMPDA0142EB
S9737-01
S9737-03
12.288
19
24
1
6
18
13
12
7
0.625
0.635 ± 0.07
26.00 ± 0.3
12.2880.635 ± 0.07
21.00 ± 0.3
KMPDA0183EA
CCD area image sensor
S9737 series
KMPDC0156EA
INTEGRATION PERIOD
(Shutter must be open)
P1V
RG
OS
P2V, TG
P1H
P2H, SG
READOUT PERIOD (Shutter must be closed)
ENLARGED VIEW
4..1031
Tpwv
Tovr
Tpwr
D1 D2 D3 D4 D18 D19 D20
D5..D12, S1..S1024, D13..D17
P2V, TG
P1H
P2H, SG
RG
OS
Tpwh, Tpws
123 1032←1024+8 (ISOLATION)
■ Device structure, line output format (S9737-01)
......
......
......
H
IG1V IG2V ISV SS
RG
RD
OS
OD OG SG
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
D11
D12
D13
D14
D15
D16
D17
D18
D19
D20
1
2
3
456
20
23 2224 14 17
V=1024
H=1024
ISH
IG1H
IG2H
P1HP2H
13
12
1197
4 BLANK4 BLANK 4 OPTICAL
BLACK
4 ISOLATION
1024
SIGNAL OUT
4 ISOLATION
TG P1V 15
P2V
1
V
Pixel format
Left ← Horizontal Direction → Right
Blank Optical Black Isolation Effective Isolation Optical Black Blank
4 4 4 1024 4 - 4
Top ← Vertical Direction → Bottom
Isolation Effective Isolation
4 1024 4
KMPDC0155EA
■ Timing chart
● Area scanning 1 (low dark current mode)
6
CCD area image sensor
S9737 series
Parameter Symbol Remark Min. Typ. Max. Unit
Pulse width Tpwv 6 18 - µs
P1V
P2V, TG Rise and fall time Tprv, Tpfv *13
200 - - ns
Pulse width Tpwh 500 5000 -ns
Rise and fall time Tprh, Tpfh 10 - - nsP1H, P2H
Duty ratio -
*13
-50 - %
Pulse width Tpws 500 5000 - ns
Rise and fall time Tprs, Tpfs 10 - - nsSG
Duty ratio -
-
-50- %
Pulse width Tpwr 100 500 -ns
RG Rise and fall time Tprr, Tpfr -5 - - ns
TG – P1H Overlap time Tovr - 3 6 - µs
*13: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.
KMPDC0157EA
● Area scanning 2 (large full well mode)
INTEGRATION PERIOD
(Shutter must be open)
P1V
RG
OS
P2V, TG
P1H
P2H, SG
READOUT PERIOD (Shutter must be closed)
ENLARGED VIEW
4..1031
1032←1024+8 (ISOLATION)
Tpwv
Tovr
Tpwr
D1 D2 D3 D4 D18 D19 D20
D5..D12, S1..S1024, D13..D17
P2V, TG
P1H
P2H, SG
RG
OS
Tpwh, Tpws
123
Parameter Symbol Remark Min. Typ. Max. Unit
Pulse width Tpwv 6 18 - µs
P1V
P2V, TG Rise and fall time Tprv, Tpfv *14
200 - - ns
Pulse width Tpwh 500 5000 -ns
Rise and fall time Tprh, Tpfh 10 - - nsP1H, P2H
Duty ratio -
*14
-50 - %
Pulse width Tpws 500 5000 - ns
Rise and fall time Tprs, Tpfs 10 - - nsSG
Duty ratio -
-
-50- %
Pulse width Tpwr 100 500 -ns
RG Rise and fall time Tprr, Tpfr -5 - - ns
TG – P1H Overlap time Tovr - 3 6 - µs
*14: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.
7
CCD area image sensor
S9737 series
0
-100 -80 -60 -40 -20 0 20 40
RESISTANCE (Ω)
1400
1200
1000
800
600
400
200
TEMPERATURE (˚C)
(Typ . Ta=25 ˚C)
KMPDB0107EA
V - I
CCD TEMPERATURE - I
0
1
2
3
VOLTAGE (V)
CCD TEMPERATURE (˚C)
4
5
6
-80
3.02.52.01.5
CURRENT (A)
1.00.50
-60
-40
-20
0
20
40
(Typ . Ta=25 ˚C)
■ Specifications of built-in temperature sensors (S9737-02)
Parameter Symbol Condition Min. Typ. Max. Unit
Resistance at cool side Rc T=0 °C - 1000 - Ω
Temperature coefficient of resistance at cool side - - - 0.00375 -Ω/Ω
Resistance at hot side Rh T=0 °C - 1000 - Ω
Temperature coefficient of resistance at hot side - - - 0.00385 -Ω/Ω
KMPDB0108EA
■ Specifications of built-in TE-cooler (S9737-02)
Parameter Symbol Condition Min. Typ. Max. Unit
Internal resistance Rint Ta=27 °C - 1.6 - Ω
Maximum current *15 Imax Th *16=27 °C
∆T *17=∆Tmax - - 4.4 A
Maximum voltage Vmax
Th*16=27 °C
∆T=∆Tmax
I=Imax
--7.4V
Maximum heat absorption *18 Qmax Tc *19=Th *16=27 °C
I=Imax - - 3.0 W
Maximum temperature at hot side - - - 50 °C
CCD temperature -Ta=25 °C --70 -50 °C
*15: If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that
this value is not a damage threshold. To protect the thermoelectric cooler (Peltier element) and maintain stable operation,
the supply current should be less than 60 % of this maximum current.
*16: Temperature at hot side of thermoelectric cooler.
*17: ∆T=Th - Tc
*18: This is a theoretical heat absorption level that offsets the temperature difference in the TE-cooled element when the
maximum current is supplied to the unit.
*19: Temperature at cool side of thermoelectric cooler.
8
CCD area image sensor
S9737 series
■ Precaution for use (electrostatic countermeasures)
● Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist strap, in
order to prevent electrostatic damage due to electrical charges from friction.
● Avoid directly placing these sensors on a work-desk or work-bench that may carr y an electrostatic charge.
● Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to dis-
charge.
● Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the
amount of damage that occurs.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.
Cat. No. KMPD1081E02
Dec. 2004 DN 9
