Produci Bulletin HCR4148 September 1996 Surface Mount Switching Diode Types HCR4148D, HCR4148M, TX, TXV HCR4148D Dua! Isolated Switching Diode HCR4148M Single Switching Diede Features e Constructed from ceramic, metal, and glass for rugged environments * Eutectic mounted silicon die. * TX and TXV processing available Description The HCR4148 series are hermetically sealed, ceramic surface mount switching diodes designed for the High Reliability user. Specifications are similar to those of the 1N4148-1 as defined by MIL-PRF-19500/116. The miniature three and four pin packages are ideal where PC board space and device weight are important design considerations. High reliability processing per MIL-PRF-19500 TX or TXV equivalent levels are available on request. Typical screening and lot acceptance iesting is provided on page 13-4. MIL-PRF-19500/116 may be used as a guide for more detail. TX and TXV devices are 100% thermal response tested. To arder add TX or TXV suffix to part number (7.. HGR4148MTX). Absolute Maximum Ratings (Ta = 25 C unless otherwise noted) Operating Junction Temperature... 0... ee eee -65 C te +200 C Storage Temperature... . 0-02-20 -85 G to +200" C Reverse Breakdown Voltage (BVR) 0.0. eee eee 100 V Continuous Forward Current (lo). ... 000222222 eee 200 mA Surge Current (lrsv, ip = 1/120 sec.}. 2 ee eee 2A PartNumber _ Rec Power Dissipation Surn-in Current? __HCR4148M 175 CW i 300 mW 100 mA | _HCR4148D 100 caw? 200 mWidiode | 80 mA/diode Notes: (1) This rating is given as an aid to designers and applies to a device that is soldered to a substrate (i.e. PC board) that is held at 25C. (2) This value is the maximum D.C. current that can 5e conducted while the device is operating ina bum-in test socket where convection cooling is limited. (Applies to TX and TXV processing only). (3) This rating given for the dual diode device applies when both devices are being driven equally. Opitek Technology, Inc. 1215 W. Crosby Road Carrallton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 15-32Types HCR4148D, HCR4148M, TX, TXV Electrical Characteristics (Ta = 25C unless otherwise noted) Symbol Parameter. Min | Max : Units Test Conditions | Ve1 _ | Forward Voltage 10) Vv lir=10ma Veo Forward Voltage 1.2 Vo |lr= 100 mA Vier) | Breakdown Voltage 100 Vo ilIp=100pA ini Reverse Leakage Current 25 nA (VR=20V Ipe Reverse Leakage Current 500 | nA :VR=75V irs Reverse Leakage Current 5G | pA Va = 20 V, Ta = 150C Ins Reverse Leakage Current 100 | pA Va =75 V, Ta = 150C Vr3__ | Forward Voltage 0.80; V_ lp=10mA,Ta= 150C Vea Forward Voltage 1.2 Vie = 100 mA, Ta =-55C IFsm Surge Current 1 A t = 8.3 ms Vin Forward Recovery Voltage 6.0 v le = 50 mA, Recover to 110% of Ve at lp = 50 mA tan Forward Recovery Time 20 ns lp = 50 mA, Recover ta 110% of Vr at lp =50 mA *C1 Junction Capacitance 4.0 pF Va=0V, f= 1MHz, sig = 50 mV, p-p max *Co Junction Capacitance 2.8 pF VR =1.8 V. f = IMHz, Vsig = 50 mV, p-p max tr Reverse Recovery Time 5.0 MS lp = I= 10 mA, In = 1.0 mA, RL = 100 Q, (C =3 pF These tests are guaranteed by die design and are not performed on assembled devices. 225 (5.72) 075 (1.91) HCR4148D 6215. (5.46) 081 (1.55) Dual Isolated Switching Diode 155 re a4} ICENTIE TER Vas | oFe ea) .028 (0.71) L078 (0.22) 3 PL 022 (0.55) 932 0.81} 1. CATHODE A : a | 2. ANODE A _ 3. CATHODE B + 4. ANDDE 8 Af bore FP 085 (1.40) 1045 1.14) 088 (2.24) O72 (1.83) OIMENS (ONS ARE IN JNTHES (MILLIMETERS) .024 (0. 1024 (0.81) O16 (0. aie (oa) ORTENTAT ION O54 (1.37) ; o. Key 2046 CL.i7) - pi ~ 105 105 (2.87) 57) u -078 (0.91) 085 (2.16) 7" 7 .024 (0.64) = ~ | a 1 1125 (3.18) -o78 {1 93) | 2115 (2.92) O71 (1.89) , fo.s1) HCR4146M Single Switching Diode . ANODE NOT OEFINED x CATHODE wh DIMENSIONS ARE IN INCHES (MILLIMETERS) Optek reserves the right ta make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrallion, Texas 75006 (214}323-2200 - Fax (214)323-2396 15-33