OM13534 - NXP Semiconductors

1. General description

The SA605 is a high performance monolithic low-power FM IF system incorporating a

mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector,

muting, logarithmic received signal strength indicator (RSSI), and vo ltage regu la to r. Th e

SA605 combines the functions of NXP SA602A and SA604A, bu t fea tu r es a hig he r mixe r

input intercept point, higher IF bandwidth (25 MHz) and temperature compensated RSSI

and limiters permitting higher performance application. The SA605 is available in 20-lead

SO (surface-mounted miniature package) and 20-lead SSOP (shrink small outline

package).

The SA605 and SA615 are functionally the same device types. The difference between

the two devices lies in the guaranteed specifications. The SA615 has a higher ICC, lower

input third-order intercept point, lower conversion mixer gain, lower limiter gain, lower AM

rejection, lower SINAD, higher THD, and higher RSSI error than the SA605. Both the

SA605 and SA615 devices meet the EIA specifications for AMPS and TACS cellular radio

applications.

2. Features and benefits

Low power consum ption: 5.7 mA typica l at 6 V

Mixer input to >500 MHz

Mixer conversion power gain of 13 dB at 45 MHz

Mixer noise figure of 4.6 dB at 45 MHz

XTAL oscillator effective to 150 MHz (L/C oscillator to 1 GHz local oscillator can be

injected)

102 dB of IF amplifier/limiter gain

25 MHz limiter small signal bandwidth

Temperature-compe nsated logarithmic Received Signal Strength Indicator (RSSI) with

a dynamic range in excess of 90 dB

Two audio outputs — muted and unmuted

Low external com p on e nt count; suitable for crystal/ceramic/LC filters

Excellent sensitivity: 0.22 V into 50  matching network for 12 dB SINAD

(Signal-to-Noise-and-Distortion ratio) for 1 kHz tone with RF at 45 MHz and IF at

455 kHz

SA605 meets cellular radio specifications

ESD hardened

SA605

High performance low power mixer FM IF system

Rev. 5 — 14 November 2014 Product data sheet

Product data sheet Rev. 5 — 14 November 2014 2 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

3. Applications

Cellular radio FM IF

High performance communications receivers

Single conversion VHF/UHF receivers

SCA receivers

RF level meter

Spectrum analyzer

Instrumentation

FSK and ASK data receivers

Log amps

Wideband low current amplification

4. Ordering information

4.1 Ordering options

Table 1. Ordering information

Type number Topside

marking Package

Name Description Version

SA605D/01 SA605D SO20 plastic small outline package; 20 leads; body wid th 7.5 mm SOT163-1

SA605DK/01 SA605DK SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

Tabl e 2. Ordering option s

Type number Orderable

part number Package Packing method Minimum

order

quantity

Temperature

SA605D/01 SA605D/01,112 SO20 Standard marking

* I C’s tube - DSC bulk pack 1520 Tamb =40 C to +85 C

SA605D/01,118 SO20 Reel 13” Q1/T1

*Standard mark SMD 2000 Tamb =40 C to +85 C

SA605DK/01 SA605DK/01,112 SSOP20 Standard marking

* I C’s tube - DSC bulk pack 1350 Tamb =40 C to +85 C

SA605DK/01,118 SSOP20 Reel 13” Q1/T1

*Standard mark SMD 2500 Tamb =40 C to +85 C

Product data sheet Rev. 5 — 14 November 2014 3 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

5. Block diagram

Fig 1. Block diagram

aaa-012909

mixer

IF amp limiter

OSCILLATOR

RSSI

quad

20 19 18 17 16 15 14 13 12 11

12345678910

RF_IN

RF_BYPASS

OSC_OUT

OSC_IN

MUTE_INPUT

RSSI_OUT

MUTED_AUD_OUTP

UNMUTED_AUD_OUTP

QUADRATURE_IN

MIXER_OUT

IF_AMP_DECOUPL

IF_AMP_IN

IF_AMP_DECOUPL

IF_AMP_OUT

GND

LIMITER_IN

LIMITER_DECOUPL

LIMITER_OUT

mute

Product data sheet Rev. 5 — 14 November 2014 4 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

6. Pinning information

6.1 Pinning

Fig 2. Pi n configuration for SO20

Fig 3. Pi n configuration for SSOP20

SA605D/01

aaa-012910

RF_IN

RF_BYPASS

OSC_OUT

OSC_IN

MUTE_INPUT

RSSI_OUT

MUTE_AUD_OUTP

UNMUTE_AUD_OUTP

QUADRATURE_IN

MIXER_OUT

IF_AMP_DECOUPL

IF_AMP_IN

IF_AMP_DECOUPL

IF_AMP_OUT

GND

LIMITER_IN

LIMITER_DECOUPL

LIMITER_OUT

SA605DK/01

RF_IN MIXER_OUT

RF_BYPASS IF_AMP_DECOUPL

OSC_OUT IF_AMP_IN

OSC_IN IF_AMP_DECOUPL

MUTE_INPUT IF_AMP_OUT

VCC GND

RSSI_OUT LIMITER_IN

MUTE_AUD_OUTP LIMITER_DECOUPL

UNMUTE_AUD_OUTP LIMITER_DECOUPL

QUADRATURE_IN LIMITER_OUT

aaa-012911

Product data sheet Rev. 5 — 14 November 2014 5 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

6.2 Pin description

Tabl e 3. Pin description

Symbol Pin Description

RF_IN 1 RF input

RF_BYPASS 2 RF bypass pin

OSC_OUT 3 oscillator output

OSC_IN 4 oscillator input

MUTE_INPUT 5 mute input

VCC 6 positive supply voltage

RSSI_OUT 7 RSSI output

MUTED_AUD_OUTP 8 mute audio output

UNMUTED_AUD_OUTP 9 unmute audio output

QUADRATURE_IN 10 quadrature detector input terminal

LIMITER_OUT 11 limiter amplifier output

LIMITER_DECOUPL 12 limiter amplifier decoupling pin

LIMITER_DECOUPL 13 limiter amplifier decoupling pin

LIMITER_IN 14 limiter amplifier input

GND 15 ground; negative supply

IF_AMP_OUT 16 IF amplifier output

IF_AMP_DECOUPL 17 IF amplifier decoupling pin

IF_AMP_IN 18 IF amplifier input

IF_AMP_DECOUPL 19 IF amplifier decoupling pin

MIXER_OUT 20 mixer output

Product data sheet Rev. 5 — 14 November 2014 6 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

7. Limiting values

8. Thermal characteristics

9. Static characteristics

Table 4. Limiting va lu es

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCC supply voltage - 9 V

Tstg storage temperature 65 +150 C

Tamb ambient temperature operating 40 +85 C

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Zth(j-a) transient thermal imped ance

from junction to ambient SA605D/01 (SO20) 90 K/W

SA605DK/01 (SSOP20) 117 K/W

Table 6. Static characteristics

VCC =+6V; T

amb =25



C; unless specified otherwise.

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage 4.5 - 8.0 V

ICC supply current 4.55 5.7 6.55 mA

Vth threshold voltage mute switch-on 1.7 - - V

mute switch-off - - 1.0 V

Product data sheet Rev. 5 — 14 November 2014 7 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

10. Dynamic characteristics

Table 7. Dynamic characteristics

Tamb =25



C; VCC = +6 V; unless specified otherwi se. RF frequency = 45 MHz + 14.5 dBV RF input step-up.

IF frequency = 455 kHz; R17 = 5.1 k



; RF le vel =



45 dBm; FM modulation = 1 kHz with



8 kHz peak deviation.

Audio output with C-message weighted filter and de-emphasis capacitor. Test circuit Figure 7. The parameters listed below

are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent the

ultimate performance limits of the device. Use of an optimized RF layout improves many of the listed parameters.

Symbol Parameter Conditions Min Typ Max Unit

Mixer/oscillator section (external LO = 300 mV)

fiinput frequency - 500 - MHz

fosc oscillator frequency - 150 - MHz

NF noise figure at 45 MHz - 5.0 - dB

IP3iinput third-order intercept point FL1 = 45.0 MHz; FL2 = 45.06 MHz - 10 - dBm

Gp(conv) conversion power gain matched 14.5 dBV step-up 10 13 15 dB

50  source - 1.7 - dB

Ri(RF) RF input resistance single-ended input 3.0 4.7 - k

Ci(RF) RF input capacitance - 3.5 4.0 pF

Ro(mix) mixer output resistance MIXER_OUT pin 1.25 1.5 - k

IF section

Gamp(IF) IF amplifier gain 50  source - 39.7 - dB

Glim limiter gain 50  source - 62.5 - dB

Pi(IF) IF input power for 3 dB input limiting sensitivity;

R17=5.1k; test at IF_AMP_IN pin -113 - dBm

AM AM rejection 80 % AM 1 kHz 29 34 43 dB

audio level RMS value; R10 = 100 k;

15 nF de-emphasis 80 150 260 mV

unmuted audio level R11 = 100 k; 150 pF de-emphasis - 480 - m V

SINAD signal-to-noise-and -distortion ratio RF level 118 dB - 16 - dB

THD total harmonic distortion 34 42 - dB

S/N signal-to-noise ratio no modulation for noise - 73 - dB

Vo(RSSI) RSSI output voltage IF; R9 = 100 k[1]

IF level = 118 dBm 0 160 650 mV

IF level = 68 dBm 1.9 2.5 3.1 V

IF level = 18 dBm 4.0 4.8 5.6 V

RSSI(range) RSSI range R9 = 100 k; IF_AMP_OUT pin - 90 - dB

RSSI RSSI variation R9 = 100 k; IF_AMP_OUT pin - 1.5 - dB

Zi(IF) IF input impedance 1.40 1.6 - k

Zo(IF) IF output impedance 0.85 1.0 - k

Zi(lim) limiter input impedance 1.40 1.6 - k

Rooutput resistance unmuted audio - 58 - k

muted audio - 58 - k

Product data sheet Rev. 5 — 14 November 2014 8 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

[1] The generator source impedance is 50 , but the SA605 input impedance at pin 18 (IF_AMP_IN) is 1500 . As a result, IF level refers

to the actual signal that enters the SA605 input (pin 8, MUTED_AUD_OUTP) which is about 21 dB less than the ‘available power’ at the

generator.

RF/IF section (internal LO)

unmuted audio level RMS value; VCC =4.5V;

RF level = 27 dBm -450-mV

Vo(RSSI) RSSI output voltage system; VCC =4.5V;

RF level = 27 dBm -4.3-V

Table 7. Dynamic characteristics …continued

Tamb =25



C; VCC = +6 V; unless specified otherwi se. RF frequency = 45 MHz + 14.5 dBV RF input step-up.

IF frequency = 455 kHz; R17 = 5.1 k



; RF le vel =



45 dBm; FM modulation = 1 kHz with



8 kHz peak deviation.

Audio output with C-message weighted filter and de-emphasis capacitor. Test circuit Figure 7. The parameters listed below

are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent the

ultimate performance limits of the device. Use of an optimized RF layout improves many of the listed parameters.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 5 — 14 November 2014 9 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

11. Application information

The layout is very critical in the performance of the receiver. We highly recommend our demo

board layout.

All of the inductors, the quad tank, and their shield must be grounded. A 10 F to 15 F or higher

value tantalum cap acitor on the supply line is essential. A low frequency ESR screening test on this

capacitor ensures consistent good sensitivity in production. A 0.1 F bypass capacitor on the

supply pin, and grounded near the 44.545 MHz oscillator improves sensitivity by 2 dB to 3 dB.

(1) R5 can be used to bias the oscillator transistor at a higher current for operation above 45 MHz.

Recommended value is 22 k, but should not be below 10 k.

Fig 4. SA605 45 MHz application circuit

aaa-012965

MUTE

mixer

IF amp

limiter

OSCILLATOR

RSSI

quad

detector

20 19 18 17 16 15 14 13 12 11

12 34 5 6789 10

mute

switch

700 Ω

C23 C21

FL1 FL2

R17

5.1 kΩ

C18 C17

C15

45 MHz

input

R5(1)

VCC

C10 C25

C11 C12 C13

RSSI

OUTPUT

AUDIO

UNMUTED

AUDIO

R9 R10 R11

C14

C26

C24

Product data sheet Rev. 5 — 14 November 2014 10 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

[1] This value can be reduced when a battery is the power source.

[2] The ceramic filters can be 30 kHz SFG455A3s made by Murata, which have 30 kHz IF bandwidth (they come in blue), or 16 kHz

CFU455Ds, also made by Murata (they come in black). All of our specifications and testing are done with the more wideband filter.

[3] Optional.

Table 8. SA6 05 application componen t list

Component Value Description Package Part number

C1 33 pF NPO ceramic C0805K 445-127x-1-ND

C2 220 pF NPO ceramic C0805K 445-7484-6-ND

C3 5 pF to 30 pF NPO ceramic; Murata TZC3P300A 110R00 TRIMCAP 490-1994-2-ND

C5 100 nF  10 % 100 nF  10 % monolithic ceramic C0805K 311-1036-1-ND

C6 5 pF to 30 pF NPO ceramic; Murata TZC3P300A 110R00 TRIMCAP 490-1994-2-ND

C7 1 nF ceramic C0805K 399-3293-1-ND

C8 10 pF NPO ceramic C0805K 490-1994-2-ND

C9 100 nF  10 % monolithic ceramic C0805K 311-1036-1-ND

C10[1] 22 F tantalum C1812 478-3117-1-ND

C11 100 nF  10 % monolithic ceramic C0805K 311-1036-1-ND

C12 15 nF  10 % ceramic C0805K 399-1161-1-ND

C13 150 pF  2 % N1500 ceramic C0805K 399-112 5-1-ND

C14 100 nF  10 % monolithic ceramic C0805K 311-103 6-1-ND

C15 10.0 pF NPO ceramic C0805K 311-1036-1-ND

C17 100 nF  10 % monolithic ceramic C0805K 311-103 6-1-ND

C18 100 nF  10 % monolithic ceramic C0805K 311-103 6-1-ND

C21 100 nF  10 % monolithic ceramic C0805K 311-103 6-1-ND

C23 100 nF  10 % monolithic ceramic C0805K 311-103 6-1-ND

C24 5 pF to 30 pF trim NPO ceramic; Murata TZC3P300A 110R00 TRIMCAP 490-1994-2-ND

C25 470 pF monolithic ceramic C0805K

C26 39 pF m onolithic ceramic C0 805K

CN1 8-pin hea der MA08-1 399-8083-10ND

CN2 BU-SMA-H J502-ND-142-

0701-881/886 520-142-0701-881

FL1, FL2[2] ceramic filter;

Murata CFUKF455KB4X or equiva lent surface mount CFUKF455KB4X-R0

L1 330 nH Coilcraft 1008CS-331 WE-KI_1008_B 1008CS-331

L2 1.2 H fixed inductor Coilcraft 1008CS-122XKLC WE-KI_1008_B 1008CS-122

L3 220 H fixed inductor WE-GF_L 1812LS-224XJB

R9 100 k  1 % 1/4 W metal film R0603 311-100KCRCT-ND

R10[3] 100 k  1 % 1/4 W metal film C0805K 311-100KCRCT-ND

R11[3] 100 k  1 % 1/4 W metal film C0805K 311-100KCRCT-ND

R17 5.1 k  5 % 1/4 W carbon composition C0805K 311-5.10KCRDKR-ND

U1 SA605DK TSSOP20 568-2087-5-nd

X1 44.545 MHz resonant 3rd-overtone crystal UM-1 49HC/11453

Product data sheet Rev. 5 — 14 November 2014 11 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

(1) The C-message filter has a peak gain of 100 dB for accurate measurements. Without the gain, the

measurements may be affected by the noise of the scope and HP339 analyzer.

(2) Set your RF generator at 45.000 MHz, use a 1 kHz modulation frequency and a 6 kHz deviation if

you use 16 kHz filters, or 8 kHz if you use 30 kHz filters.

(3) The smallest RSSI voltage (that is, when no RF input is present and the input is terminated) is a

measure of the quality of the layout and design. If the lowest RSSI voltage is 250 mV or higher, it

means that the receiver is in regenerative mode. In that case, the receiver sensitivity is worse than

expected.

(4) The measured typical sensitivity for 12 dB SINAD should be 0.22 V or 120 dBm at the RF input.

Fig 5. SA605 application circuit test setu p

Audio out:

C message weighted

0 dB reference = recovered audio for 8 kHz peak deviation (dB)

Fig 6. Performance of the SA605 application board at 25 C

SCOPE

SA605 DEMOBOARD

aaa-012958

RF GENERATOR(1)

45 MHz

VCC (+6 V)

DC VOLTMETER

HP339A DISTORTION

ANALYZER(4)

C-MESSAGE(3)

RSSI(2) AUDIO DATA

AUDIO REF = 174 mV (RMS value)

RSSI (V)

THD + NOISE

NOISE

AM (80 % MOD)

aaa-012967

−130

−80

−60

−40

−20

(dB)

NOISE

AM (80 % MOD)

THD + NOISE

RSSI

(V)

−110 −70 −50 −30 −10

RF input level (dBm)

−100

−90 10 20

RF = 45 MHz

IF = 455 kHz

VCC = 6 V

Product data sheet Rev. 5 — 14 November 2014 12 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

11.1 Circuit description

The SA605 is an IF signal processing system suitable for second IF or single conversion

systems with input frequency as high as 1 GHz. The bandwid th of the IF amplifier is abou t

40 MHz, with 39.7 dB of gain from a 50  source. The bandwidth of the limiter is about

28 MHz with about 62.5 dB of gain from a 50  source. However, the gain/bandwidth

distribution is optimized for 455 kHz, 1.5 k source applications. The overall system is

well-suited to battery operation as well as high-performance and high-quality products of

all types.

The input stage is a Gilbert cell mixer with oscillator. Typical mixer characteristics include

a noise figure of 5 dB, conversion gain of 13 dB, and input third-order intercept of

10 dBm. The oscillator operates in excess of 1 GHz in L/C tank configurations. Hartley or

Colpitts circuits can be used up to 100 MHz for cry stal configurations. Butler oscillators

are recommended for crystal configurations up to 150 MHz.

The output of the mixer is internally loaded with a 1.5 k resistor, permitting direct

connection to a 455 kHz ceramic filter. The input resistance of the limiting IF amplifiers is

also 1.5 k. With most 455 kHz ceramic filters and many crystal filters, no impedance

matching network is necessary. To achieve optimum lineari ty of the log signal strength

indicator, there must be a 12 dBV insertion loss between the first and second IF stages. If

the IF filter or inter-st age network does not cause 12 dBV insertion loss, a fixed or variable

resistor can be added between the first IF output (pin 16, IF_AMP_OUT) and the

inter-stage network.

The signal from the second limiting amplifier goes to a Gilbert cell quadrature detector.

One port of the Gilbert cell is internally driven by the IF. The other output of the IF is

AC-coupled to a tuned quadrature network. This signal, which now has a 90 phase

relationship to the internal signal, drives the other port of the multiplier cell.

Overall, the IF section has a gain of 90 dB. For operation at intermediate frequencies

greater than 455 kHz, special care must be given to layout, termination, and inter-stage

loss to avoid instability.

The demodulated output of the quadrature detector is available at two pins, one

continuous and one with a mu te switch . Sign al at te nu at ion with th e mu te act iv at ed is

greater than 60 dB. The mute input is very high-impedance a nd is comp atib le with CMOS

or TTL levels.

A log signal strength complete s the circuitry. The output range is greater than 90 dB and is

temperature compensated. This log signal strength indicator exceeds the criteria for

AMPS or TACS cellular telephone.

Remark: dBV = 20log VO/V

Product data sheet Rev. 5 — 14 November 2014 13 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

12. Test information

Fig 7. SA605 45 MHz test circuit (relays as shown)

aaa-012966

MUTE

mixer

IF amp

limiter

OSCILLATOR

RSSI

quad

detector

20 19 18 17 16 15 14 13 12 11

1345678910

mute

switch

700 Ω

C23 C21

FL1 FL2

R17

5.1 kΩ

C18 C17

VCC

C10 C11 C12 C13

RSSI

OUTPUT

AUDIO

UNMUTED

AUDIO

R9 R10 R11

IFT1

C14

C26

‘C’ WEIGHTED

AUDIO

MEASUREMENT

CIRCUIT

emitter

base

C15

C16

1.3 kΩ

51.7 Ω

−36 dB,

156 kΩ/50 Ω pad

SW5

SW6

C19

32.8 Ω

71.5 Ω

96.5 Ω

−10.6 dB,

50 Ω/50 Ω pad

SW7

C20

51.5 Ω

−29 dB,

929 Ω/50 Ω pad

SW8

C22

32.6 Ω

96.5 Ω

−10.6 dB,

50 Ω/50 Ω pad

71.5 Ω

C24

3880 Ω

50.5 Ω

−25 dB,

1500 Ω/50 Ω pad

2430 Ω

SW9

45 MHz

SW4

39.2 Ω

30.5 Ω

178 Ω

ext.

LOC osc

44.545 MHz

SW3

SW1

51.1 Ω

SW2

mini-circuit

ZSC2-1B

45.06

MHz

Product data sheet Rev. 5 — 14 November 2014 14 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

[1] This value can be reduced when a battery is the power source.

Table 9. Automatic test circuit component list

Component Description

C1 33 pF NPO ceramic

C2 180 pF NPO ceramic

C3, C6 5 pF to 30 pF variable capacitor; Murata TZC3P300A 110R00

C5, C9, C1 1, C14, C17,

C18, C21, C23 100 nF 10 % monolithic ceramic

C7 1 nF ceramic

C8, C15 10 pF NPO ceramic

C10[1] 6.8 F tantalum (minimum)

C12 15 nF 10 % ceramic

C13 150 pF 2 % N1500 ceramic

C26 390 pF 10 % monolithic ceramic

FL1 ceramic filter Murata SFG455A3 or equivalent

FL2

IFT1 330 H variable shiel ded inductor, Toko 836AN-0129Z

L1 330 nH Coilcraft 1008CS-331

L2 1.2 H Coilcraft 1008CS-122

X1 44.545 MHz 3rd Overtone series resonant crystal in the HC-49U case

R9 100 k1 % 1/4 W metal film

R10, R11 100 k1 % 1/4 W metal film (optional)

R17 5.1 k5 % 1/4 W carbon composition

Product data sheet Rev. 5 — 14 November 2014 15 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

13. Package outline

Fig 8. Package outline SOT163-1 (SO20)

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Product data sheet Rev. 5 — 14 November 2014 16 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

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Product data sheet Rev. 5 — 14 November 2014 17 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

14. Soldering of SMD packages

This text provides a very brief insight into a complex technology. A more in-depth account

of soldering ICs can be found in Application Note AN10365 “Surface mount reflow

soldering description”.

14.1 Introduction to soldering

Soldering is one of the most common methods through which packages are attached to

Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both

the mechanical and the electrical connection. There is no single soldering method that is

ideal for all IC packages. Wave soldering is often preferred when through-hole and

Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not

suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high

densities that come with increased miniaturization.

14.2 Wave and reflow soldering

W ave soldering is a joinin g technology in which the joint s are made by solder coming from

a standing wave of liquid solder. The wave soldering process is suitable for the following:

•Through-hole components

•Leaded or leadless SMDs, which are glued to the surface of the printed circuit board

Not all SMDs can be wave soldered. Packages with solder balls, and some leadless

packages which have solder lands underneath the body, cannot be wave soldered. Also,

leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,

due to an increased probability of bridging.

The reflow soldering process involves applying solder paste to a board, followed by

component placement and exposure to a temperature profile. Leaded packages,

packages with solder balls, and leadless packages are all reflow solderable.

Key characteristics in both wave and reflow soldering are:

•Board specifications, including the board finish, solder masks and vias

•Package footprints, including solder thieves and orientation

•The moisture sensitivity level of the packages

•Package placement

•Inspection and repair

•Lead-free soldering versus SnPb soldering

14.3 Wave soldering

Key characteristics in wave soldering are:

•Process issues, such as application of adhesive and flux, clinching of leads, board

transport, the solder wave parameters, and the time during which components are

exposed to the wave

•Solder bath specifications, including temperature and impurities

Product data sheet Rev. 5 — 14 November 2014 18 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

14.4 Reflow soldering

Key characteristics in reflow soldering are:

•Lead-free ve rsus SnPb soldering; note th at a lead-free reflow process usua lly leads to

higher minimum peak temperatures (see Figure 10) than a SnPb process, thus

reducing the process window

•Solder paste printing issues including smearing, release, and adjusting the process

window for a mix of large and small components on one board

•Reflow temperature profile; this profile includes preheat, reflow (in which the board is

heated to the peak temperature) and cooling down. It is imperative that the peak

temperature is high enoug h for the solder to make reliable solder joint s (a solder paste

characteristic). In addition, the peak temperature must be low en ough that the

packages and/or boards are not damaged. Th e peak temperature of the package

depends on package thickness and volume and is classified in accordance with

Table 10 and 11

Moisture sensitivity precautions, as indicated on the packing, must be respected at all

times.

Studies have shown that small packages reach higher temperatures during reflow

soldering, see Figure 10.

Table 10. SnPb eutectic process (from J-STD-0 20D)

Package thickness (mm) Package reflow temperature (C)

Volume (mm3)

< 350  350

< 2.5 235 220

 2.5 220 220

Table 11. Lead-free process (from J-STD-020D)

Package thickness (mm) Package reflow temperature (C)

Volume (mm3)

< 350 350 to 2000 > 2000

< 1.6 260 260 260

1.6 to 2.5 260 250 245

> 2.5 250 245 245

Product data sheet Rev. 5 — 14 November 2014 19 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

For further information on temperature profiles, refer to Application Note AN10365

“Surface mount reflow soldering description”.

MSL: Moisture Sensitivity Level

Fig 10. Temperature profiles for large and small components

001aac844

temperature

time

minimum peak temperature

= minimum soldering temperature

maximum peak temperature

= MSL limit, damage level

peak

temperature

Product data sheet Rev. 5 — 14 November 2014 20 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

15. Soldering: PCB footprints

Fig 11. PCB footprint for SOT163-1 (SO20); reflow soldering

Fig 12. PCB footprint for SOT163-1 (SO20); wave soldering

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Product data sheet Rev. 5 — 14 November 2014 21 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

Fig 13. PCB footprint for SOT266-1 (SSOP20); reflow soldering

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Product data sheet Rev. 5 — 14 November 2014 22 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

16. Abbreviations

17. Revision history

Table 12. Abbreviations

Acronym Description

AM Amplitude Modulation

AMPS Advanced Mobi le Phone System

ASK Amplitude Shift Keying

CMOS Complementary Metal-Oxide Semiconductor

ESD ElectroStatic Discharge

ESR Equivalent Series Resistor

FM Frequency Modulation

FSK Frequency Shift Keying

IF Intermediate Frequency

L/C inductor-capacitor filter

RF Radio Frequency

RSSI Received Signal Strength Indicator

SCA S ubsidiary Communication s Authori zation

SINAD Signal-to-Noise-And-Distortion ratio

TACS Total Access Communication System

THD Total Harmonic Distortion

UHF Ultra High Frequency

TTL Transistor-Transistor Logic

VHF Very High Frequency

Table 13. Revision history

Document ID Release date Data sheet status Change notice Supersedes

SA605 v.5 20141114 Product data sheet - SA605 v.4

Modifications: •Table 8 “SA605 application component list” updated

•Figure 4 “SA605 45 MHz application circuit” updated

SA605 v.4 20140801 Product data sheet - SA605 v.3

SA605 v.3 20140501 Product data sheet - SA605 v.2

SA605 v.2 19971107 Product specification ECN 853-1401 18663 SA605 v.1

SA605 v.1 19921103 Product specifica tio n - -

Product data sheet Rev. 5 — 14 November 2014 23 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

18. Legal information

18.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

18.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificat ion — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond tho se described in the

Product data sheet.

18.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semicondu ctors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, lif e-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applicati ons or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development .

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 5 — 14 November 2014 24 of 25

NXP Semiconductors SA605

High performance low power mixer FM IF system

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It i s neither qua lif ied nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in au tomotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated) version of a docume nt is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

18.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

19. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors SA605

High performance low power mixer FM IF system

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 14 November 2014

Document identifier: SA605

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

20. Contents

1 General description. . . . . . . . . . . . . . . . . . . . . . 1

2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1

3 Applications. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

4 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4.1 Ordering options. . . . . . . . . . . . . . . . . . . . . . . . 2

5 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Pinning information. . . . . . . . . . . . . . . . . . . . . . 4

6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Thermal characteristics . . . . . . . . . . . . . . . . . . 6

9 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6

10 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7

11 Application information. . . . . . . . . . . . . . . . . . . 9

11.1 Circuit description. . . . . . . . . . . . . . . . . . . . . . 12

12 Test information. . . . . . . . . . . . . . . . . . . . . . . . 13

13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15

14 Soldering of SMD packages . . . . . . . . . . . . . . 17

14.1 Introduction to soldering . . . . . . . . . . . . . . . . . 17

14.2 Wave and reflow soldering . . . . . . . . . . . . . . . 17

14.3 Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 17

14.4 Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . 18

15 Soldering: PCB footprints. . . . . . . . . . . . . . . . 20

16 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 22

17 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 22

18 Legal information. . . . . . . . . . . . . . . . . . . . . . . 23

18.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 23

18.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

18.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 23

18.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 24

19 Contact information. . . . . . . . . . . . . . . . . . . . . 24

20 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25