PD - 97617 IRL6342PbF HEXFET(R) Power MOSFET VDS 30 V VGS 12 V 6 ' RDS(on) max 14.6 m 6 ' 11 nC 6 ' * ' 9.9 A (@VGS = 4.5V) Qg (typical) ID (@TA = 25C) SO-8 Applications * Battery operated DC motor inverter MOSFET * System/Load Switch Features and Benefits Features Industry-Standard SO-8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Orderable part number Package Type IRL6342PBF IRL6342TRPBF SO-8 SO-8 Absolute Maximum Ratings Parameter Resulting Benefits Multi-Vendor Compatibility Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tube/Bulk 95 4000 Tape and Reel Max. VDS Drain-to-Source Voltage 30 VGS Gate-to-Source Voltage 12 ID @ TA = 25C Continuous Drain Current, VGS @ 4.5V 9.9 ID @ TA = 70C Continuous Drain Current, VGS @ 4.5V 7.9 IDM PD @TA = 25C PD @TA = 70C Pulsed Drain Current e Power Dissipation e c Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range Note Units V A 79 2.5 1.6 0.02 -55 to + 150 W W/C C Notes through are on page 2 www.irf.com 1 01/03/11 IRL6342PbF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) Min. Typ. Max. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient 30 --- --- 22 --- --- Static Drain-to-Source On-Resistance --- --- 12.0 15.0 14.6 19.0 VGS = 0V, ID = 250A V mV/C Reference to 25C, ID = 1mA VGS = 4.5V, ID = 9.9A m VGS = 2.5V, ID = 7.9A d d VGS(th) Gate Threshold Voltage 0.5 --- 1.1 V VGS(th) IDSS Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current --- --- -4.2 --- --- 1.0 mV/C Gate-to-Source Forward Leakage --- --- --- --- 150 100 Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge --- 38 --- --- --- --- 11 0.01 -100 --- Post-Vth Gate-to-Source Charge Gate-to-Drain Charge --- --- 0.60 4.6 --- --- --- --- 5.79 5.2 --- --- IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Conditions Units A nA S --- --- nC Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) RG Gate Resistance --- 2.0 --- td(on) tr td(off) Turn-On Delay Time Rise Time Turn-Off Delay Time --- --- --- 6.0 12 33 --- --- --- tf Ciss Fall Time Input Capacitance --- --- 14 1025 --- --- Coss Crss Output Capacitance Reverse Transfer Capacitance --- --- 97 70 --- --- pF Min. Typ. Max. Units VDS = VGS, ID = 10A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 12V VGS = -12V VDS = 10V, ID = 7.9A VGS = 4.5V VDS = 15V ID = 7.9A ns VDD = 15V, VGS = 4.5V ID = 7.9A e RG = 6.8 See Figs. 18 VGS = 0V VDS = 25V = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current c (Body Diode) VSD Diode Forward Voltage --- --- 2.5 A --- --- 79 --- --- 1.2 trr Reverse Recovery Time --- 13 Qrr Reverse Recovery Charge --- 5.2 Conditions MOSFET symbol showing the integral reverse Parameter RJA Junction-to-Drain Lead f Junction-to-Ambient e G p-n junction diode. S V TJ = 25C, IS = 9.9A, VGS = 0V 20 ns TJ = 25C, IF = 7.9A, VDD = 24V 7.8 nC di/dt = 100/s Thermal Resistance RJL D d d Typ. Max. --- 20 --- 50 Units C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. When mounted on 1 ich square copper board. R is measured at T J of approximately 90C. 2 www.irf.com IRL6342PbF 100 100 10 BOTTOM VGS 10V 4.5V 3.5V 2.5V 2.0V 1.8V 1.5V 1.3V 1 60s PULSE WIDTH Tj = 25C 0.1 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 BOTTOM 1 VGS 10V 4.5V 3.5V 2.5V 2.0V 1.8V 1.5V 1.3V 1.3V 1.3V 60s PULSE WIDTH Tj = 150C 0.1 0.01 0.1 1 10 0.1 100 100 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics T J = 150C 10 T J = 25C 1 VDS = 10V 60s PULSE WIDTH 0.1 ID = 9.9A VGS = 4.5V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 10000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED ID= 7.9A VGS, Gate-to-Source Voltage (V) C rss = C gd C oss = C ds + C gd 1000 Ciss Coss 100 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Crss 10 12.0 VDS= 24V VDS= 15V 10.0 VDS= 6.0V 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 5 10 15 20 25 30 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRL6342PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 100 TJ = 150C T J = 25C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 10msec 10 DC 1 T A = 25C Tj = 150C Single Pulse VGS = 0V 1.0 0.1 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.0 10 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 10 VGS(th) , Gate threshold Voltage (V) 1.4 8 ID, Drain Current (A) 100sec 1msec 6 4 2 0 1.2 1.0 0.8 ID = 10A ID = 250A 0.6 ID = 1.0mA 0.4 0.2 25 50 75 100 125 150 -75 -50 -25 T C , Case Temperature (C) 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJA ) C/W 100 D = 0.50 10 0.20 0.10 0.05 0.02 0.01 1 0.1 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com 40 RDS(on), Drain-to -Source On Resistance ( m) RDS(on), Drain-to -Source On Resistance (m ) IRL6342PbF ID = 9.9A 35 30 25 T J = 125C 20 15 10 T J = 25C 5 1 2 3 4 5 6 7 8 9 35 30 Vgs = 2.5V 25 20 Vgs = 4.5V 15 10 10 11 12 0 10 20 30 40 50 60 70 80 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 30000 250 ID TOP 1.3A 1.9A BOTTOM 7.9A 200 25000 20000 150 Power (W) EAS , Single Pulse Avalanche Energy (mJ) 40 100 15000 10000 50 5000 0 1E-8 0 25 50 75 100 125 150 1E-7 Driver Gate Drive - - P.W. + + - 1E-3 P.W. Period D.U.T. ISD Waveform Reverse Recovery Current V DD D= Period * + * dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test 1E-4 VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer RG 1E-5 Fig 15. Typical Power vs. Time Fig 14. Maximum Avalanche Energy vs. Drain Current D.U.T 1E-6 Time (sec) Starting T J , Junction Temperature (C) + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs www.irf.com 5 IRL6342PbF Id Vds Vgs L VCC DUT 0 1K Vgs(th) S Qgs1 Qgs2 Qgd Qgodr Fig 17b. Gate Charge Waveform Fig 17a. Gate Charge Test Circuit V(BR)DSS 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A I AS 0.01 tp Fig 18a. Unclamped Inductive Test Circuit V DS V GS RG RD VDS 90% D.U.T. + -V DD V10V GS Pulse Width 1 s Duty Factor 0.1 Fig 19a. Switching Time Test Circuit 6 Fig 18b. Unclamped Inductive Waveforms 10% VGS td(on) tr td(off) tf Fig 19b. Switching Time Waveforms www.irf.com IRL6342PbF SO-8 Package Outline (Mosfet & Fetky) Dimensions are shown in milimeters (inches) ' ,1&+(6 0,1 0$; $ $ E F ' ( %$6,& H H %$6,& + . / \ ',0 % $ + >@ ( $ ; H H ;E >@ $ 0,//,0(7(56 0,1 0$; %$6,& %$6,& .[ & \ >@ $ ;/ ;F & $ % 127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( )22735,17 ;>@ >@ ;>@ ;>@ SO-8 Part Marking Information (;$03/(7+,6,6$1,5) 026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; ) '$7(&2'( <:: 3 ',6*1$7(6/($')5(( 352'8&7 237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRL6342PbF SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JE DE C JE S D47F SO-8 guidelines ) MS L1 (per JE DE C J-S T D-020D Yes ) Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/2011 8 www.irf.com