U440/441
Vishay Siliconix
Document Number: 70251
S-04031—Rev. D, 04-Jun-01 www.vishay.com
8-1
Matched N-Channel JFET Pairs
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Max (mV)
U440 –1 to –6 –25 4.5 –1 10
U441 –1 to –6 –25 4.5 –1 20
FEATURES BENEFITS APPLICATIONS
DTwo-Chip Design
DHigh Slew Rate
DLow Offset/Drift Voltage
DLow Gate Leakage: 1 pA
DLow Noise
DHigh CMRR: 85 dB.
DMinimum Parasitics Ensuring Maximum
High-Frequency Performance
DImproved Op Amp Speed, Settling Time Accuracy
DMinimum Input Error/Trimming Requirement
DInsignificant Signal Loss/Error Voltage
DHigh System Sensitivity
DMinimum Error with Large Input Signal
DWideband Differential Amps
DHigh-Speed, Temp-Compensated,
Single-Ended Input Amps
DHigh-Speed Comparators
DImpedance Converters
DESCRIPTION
The U440/441 are matched pairs of JFETs mounted in a single
TO-71 package. This two-chip design reduces parasitics and
gives better performance at very high frequencies while
ensuring extremely tight matching. These devices are an
excellent choice for use as wideband differential amplifiers in
demanding test and measurement applications.
The hermetically-sealed TO-71 package is available with full
military screening per MIL-S-19500 (see Military Information).
For similar products in SO-8 packaging see the
SST440/SST441 data sheet. For low-noise options, see the
SST/U401 series data sheet. For low-leakage alternatives,
see the U421/423 data sheet.
TO-71
Top View
G1
S1
D1
G2
D2
S2
1
2
3
6
5
4
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Gate Voltage "50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation : Per Sidea250 mW. . . . . . . . . . . . . . . . . . . . . . . .
Totalb500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
U440/441
Vishay Siliconix
www.vishay.com
8-2 Document Number: 70251
S-04031—Rev. D, 04-Jun-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
U440 U441
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = –1 mA, VDS = 0 V –35 –25 –25
Gate-Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 nA –3.5 –1–6–1–6V
Saturation Drain CurrentbIDSS VDS = 10 V, VGS = 0 V 15 6 30 6 30 mA
VGS = –15 V, VDS = 0 V –1–500 –500 pA
Gate Reverse Current IGSS TA = 125_C–2 nA
VDG = 10 V, ID = 5 mA –1–500 –500 pA
Gate Operating Current IGTA = 125_C–0.3 nA
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward T ransconductance gfs VDS = 10 V, ID = 5 mA 6 4.5 9 4.5 9 mS
Common-Source
Output Conductance gos
VDS = 10 V, ID = 5 mA
f = 1 kHz 70 200 200 mS
Common-Source
Input Capacitance Ciss VDS = 10 V, ID = 5 mA 3
Common-Source Reverse
T ransfer Capacitance Crss
VDS = 10 V, ID = 5 mA
f = 1 MHz 1pF
Equivalent Input
Noise Voltage enVDS = 10 V, ID = 5 mA
f = 10 kHz 4nV⁄
√Hz
Matching
Differential Gate-Source Voltage |VGS1 –VGS2|VDG = 10 V, ID = 5 mA 6 10 20 mV
Gate-Source Voltage
Differential Change
with Temperature
D|VGS1 –VGS2|
DTVDG = 10 V, ID = 5 mA
TA = –55 to 125_C20 mV/_C
Saturation Drain Current RatiocIDSS1
IDSS2 VDS = 10 V, VGS = 0 V 0.97
T ransconductance Ratiocgfs1
gfs2 VDS = 10 V, ID = 5 mA
f = 1 kHz 0.97
Common Mode Rejection Ratio CMRR VDG = 5 to 10 V, ID = 5 mA 85 dB
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NZFD
b. Pulse test: PW v300 ms duty cycle v3%.
c. Assumes smaller value in the numerator.
U440/441
Vishay Siliconix
Document Number: 70251
S-04031—Rev. D, 04-Jun-01 www.vishay.com
8-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
50
0–10–8–2
40
10
0
20
16
4
0
30
20
12
8
–4–60 4 16 20812
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
VGS(off) – Gate-Source Cutoff Voltage (V)
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
gfs
IDSS
gfs – Forward Transconductance (mS)
Gate Leakage Current
VDG – Drain-Gate Voltage (V)
0.1 pA
10 pA
1 pA
IG(on) @ ID
IGSS @ 25_C
TA = 125_C
10 mA 1 mA
TA = 25_C
IGSS @ 125_C
1 mA
ID = 10 mA
– Gate Leakage
IG
10
068210
8
6
2
0
4
4
Output Characteristics
VDS – Drain-Source Voltage (V)
– Drain Current (mA)
ID
VGS = 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
VGS(off) = –2 V
5
0 0.2 0.8 1
4
1
0
2
3
0.4 0.6
Output Characteristics
VDS – Drain-Source Voltage (V)
– Drain Current (mA)
ID
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
VGS = 0 V
VGS(off) = –2 V
15
0 0.2 0.8 1
12
3
0
9
6
0.4 0.6
Output Characteristics
VDS – Drain-Source Voltage (V)
– Drain Current (mA)
ID
VGS = 0 V
–1.5 V
–0.5 V
–2.5 V
–1.0 V
–3.0 V
–3.5 V
–2.0 V
VGS(off) = –5 V
30
08210
24
6
0
18
12
46
Output Characteristics
VDS – Drain-Source Voltage (V)
– Drain Current (mA)
ID
VGS = 0 V
–0.5 V
–2.5 V
–2.0 V
–3.0 V
–3.5 V
–1.0 V
–1.5 V
VGS(off) = –5 V
100 pA
1 nA
10 nA
100 nA
– Saturation Drain Current (mA)
IDSS
U440/441
Vishay Siliconix
www.vishay.com
8-4 Document Number: 70251
S-04031—Rev. D, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10
0–0.4 –1.6 –2
8
2
0
10
0–1.2 –1.6–0.4 –2
8
4
2
0
6
4
6
–0.8 –1.2
–0.8
30
0–4–5–1
24
6
0
18
12
–2–3
10
–5–4–10
8
2
0
6
4
–2–3
Transfer Characteristics
VGS – Gate-Source Voltage (V)
– Drain Current (mA)
ID
TA = –55_C
VGS(off) = –2 V
125_C
Transconductance vs. Gate-Source Voltage
VGS – Gate-Source Voltage (V)
TA = –55_C
125_C
Transfer Characteristics
TA = –55_C
125_C
VGS – Gate-Source Voltage (V)
TA = –55_C
Transconductance vs. Gate-Source Voltage
– Drain Current (mA)
ID
VGS – Gate-Source Voltage (V)
125_C
1100.1
50
40
20
10
0
30
ID – Drain Current (mA)
VGS(off) = –2 V
AV– Voltage Gain
Circuit Voltage Gain vs. Drain Current
1 10 100
200
160
80
40
0
120
VGS(off) = –2 V
TA = 25_C
VGS(off) = –5 V
On-Resistance vs. Drain Current
ID – Drain Current (mA)
RL+10 V
ID
Assume VDD = 15 V, VDS = 5 V
AV+
gfs RL
1)RLgos
VGS(off) = –5 V
VDS = 10 V VGS(off) = –5 V VDS = 10 V
VGS(off) = –2 V VDS = 10 V
f = 1 kHz VGS(off) = –5 V
VDS = 10 V
f = 1 kHz
25_C
25_C25_C
25_C
rDS(on) – Drain-Source On-Resistance ( Ω )
gfs – Forward Transconductance (mS)
gfs – Forward Transconductance (mS)
U440/441
Vishay Siliconix
Document Number: 70251
S-04031—Rev. D, 04-Jun-01 www.vishay.com
8-5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10
0–16 –20–4
8
2
0
5
0–12 –20–16–4
4
2
1
0
6
4
3
–8–12 –8
100
10
1
0.1 100 1000
100
10
1
0.1
100 1000
Common-Source Input Capacitance
vs. Gate-Source Voltage
VDS = 0 V
f = 1 MHz
VGS – Gate-Source Voltage (V)
VDS = 10 V
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
VDS = 0 V
f = 1 MHz
VGS – Gate-Source Voltage (V)
– Reverse Feedback Capacitance (pF)Crss
VDS = 10 V
(mS)
TA = 25_C
VDS = 10 V
ID = 10 mA
gig
big
Input Admittance
f – Frequency (MHz)
gis
bis
f – Frequency (MHz)
(mS)
TA = 25_C
VDS = 10 V
ID = 10 mA
bfg
Forward Admittance
–bfs gfs
– Input Capacitance (pF)Ciss
200 500 200 500
10
1
0.1
0.01 100 1000
100
10
1
0.1
100 1000
(mS)
TA = 25_C
VDS = 10 V
ID = 10 mA
–brg
–grg grg
Reverse Admittance
f – Frequency (MHz)
–brs
–grs
(mS)
TA = 25_C
VDS = 10 V
ID = 10 mA
gog, gos
bog, bos
Output Admittance
f – Frequency (MHz)
200 500 200 500
VDS = 5 V VDS = 5 V
–gfg
U440/441
Vishay Siliconix
www.vishay.com
8-6 Document Number: 70251
S-04031—Rev. D, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10 100 1 k 100 k10 k
50
40
10
0
150
120
90
30
00.1 1 10
60
30
20
Equivalent Input Noise Voltage vs. Frequency
ID = 1 mA
VDS = 10 V
f – Frequency (Hz)
Output Conductance vs. Drain Current
ID – Drain Current (mA)
125_C
200
0–10–8–2
160
40
00.1 110
10
8
2
0
200
160
120
40
0
120
80 80
–4–6
6
4
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
VGS(off) – Gate-Source Cutoff Voltage (V)
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V
f = 1 kHz
rDS
gos
Common-Source Forward Transconductance
vs. Drain Current
ID – Drain Current (mA)
TA = –55_C
125_C
VGS(off) = –5 V VDS = 10 V
f = 1 kHz
VGS(off) = –5 V VDS = 10 V
f = 1 kHz
ID = 10 mA
TA = –55_C
25_C
25_C
en – Noise Voltage nV / Hz
gos – Output Conductance (µS)
rDS(on) – Drain-Source On-Resistance ( Ω )
gos – Output Conductance (µS)
gfs – Forward Transconductance (mS)
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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All product specifications and data are subject to change without notice.
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