Ordering number:EN4242 P-Channel Silicon MOSFET 2SJ257 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ257] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 * Low ON resistance. * Ultrahigh-speed switching. * Low-voltage drive. * Surface mount type device making the following possible. * Reduction in the number of manufacturing processes for 2SJ257-applied equipment. * High density surface mount applications. * Small size of 2SJ257-applied equipment. 20.9 Features 0.4 2 3 1 : Gate 2 : Drain 3 : Source SANYO : SMP 2.7 1 2.55 2.55 unit:mm 2090A [2SJ257] 1 0.8 3 1.2 2.55 2.7 2.55 2 2.55 1.3 1.4 1.5max 8.8 4.5 1.35 3.0 9.9 0.8 10.2 2.55 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 42899TH (KT)/51193TH (KOTO) AX-8376 No.4242-1/4 2SJ257 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol Conditions Ratings Unit VDSS VGSS 15 V ID -10 A IDP -30 PW10s, duty cycle1% V -40 A 1.65 W Allowable Power Dissipation PD 50 W Channel Temperature Tch 150 C Storage Temperature Tstg -55 to +150 C Tc=25C Electrical Characteristics at Ta = 25C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) Conditions ID=-1mA, VGS=0 IG=100A, VDS=0 VDS=-30V, VGS=0 VGS=12V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-5A ID=-5A, VGS=-10V ID=-5A, VGS=-4V VDS=-10V, f=1MHz Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-10V, f=1MHz VDS=-10V, f=1MHz Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Ratings min typ max Unit -30 V 15 V -1.0 4 -100 A 1 0 A -2.0 6.5 V S 85 120 m 120 170 m 1000 pF 600 pF 220 pF See specified Test Circuit 15 ns See specified Test Circuit 80 ns td(off) See specified Test Circuit 120 ns tf See specified Test Circuit 170 IS=-10A, VGS=0 -1.0 VSD ns -1.5 V Switching Time Test Circuit No.4242-2/4 2SJ257 No.4242-3/4 2SJ257 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 1999. Specifications and information herein are subject to change without notice. PS No.4242-4/4