V
RRM
= 35 V
I
F(AV)
= 160 A
Features
• High Surge Capability TO-249AB Package
• Isolated to Plate
• Not ESD Sensitive
Parameter FST16035L Unit
35 V
25 V
35
V
Low V
F
Silicon Power
Schottky Diode
FST16035L
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Maximum recurrent peak reverse voltage
Maximum RMS voltage
M i DC bl ki lt
ConditionsSymbol
V
RRM
V
RMS
V
35
V
-55 to 150 °C
-55 to 150 °C
Parameter FST16035L Unit
160 A
1000 A
0.60
1
150
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg) 0.50 °C/W
Operating temperature
mA
V
R
ΘJC
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
T
stg
Symbol
M
ax
i
mum
DC
bl
oc
ki
ng vo
lt
age
Storage temperature
T
C
= 100 °C
V
DC
T
j
A
verage forward current (per pkg) I
F(AV)
Maximum instantaneous forward voltage (per
leg)
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
I
R
T
j
= 100 °C
t
p
= 8.3 ms, half sineI
FSM
Peak forward surge current (per leg)
I
FM
= 80 A, Tj = 25 °C
T
j
= 25 °C
V
F
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FST16035L
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Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
FST16035L
F
H
P
J
G
C
B
A
L
E
Q
M
R
N
D
K
123
Inches Millimeters
Min Max Min Max
A 1.995 2.005 50.67 50.93
B 0.300 0.325 7.62 8.26
C 0.495 0.505 12.57 12.83
D 0.182 0.192 4.62 4.88
E 0.990 1.010 25.15 26.65
F 2.390 2.410 60.71 61.21
G 1.495 1.525 37.90 38.70
H 0.114 0.122 2.90 3.10
J ----- 0.420 ----- 10.67
K 0.256 0.275 6.5 7.0
L 0.490 0.510 12.45 12.95
M 0.330 0.350 8.38 8.90
N 0.175 0.195 4.45 4.95
P 0.035 0.045 0.89 1.14
R 0.445 0.455 11.30 11.56
Q 0.890 0.910 22.61 23.11
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