Zowie Technology Corporation High Voltage Transistor NPN Silicon COLLECTOR 3 3 MMBTA43 BASE 1 1 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 200 Vdc Collector-Base Voltage VCBO 200 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 500 mAdc Symbol Max. Unit PD 225 1.8 mW mW / oC R JA 556 PD 300 2.4 R JA TJ,TSTG 417 -55 to +150 Rating Collector Current-Continuous THERMAL CHARACTERISTICS Characteristic (1) Total Device Dissipation FR-5 Board o Derate above 25 C o TA=25 C Thermal Resistance Junction to Ambient (2) Total Device Dissipation Alumina Substrate, o Derate above 25 C o TA=25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature o C/W mW mW / oC o C/W o C DEVICE MARKING MMBTA43=M1E o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Symbol Min. Max. Unit Collector-Emitter Breakdowe Voltage(3) ( IC= 1.0mAdc, IB=0 ) V(BR)CEO 200 - Vdc Collector-Base Breakdowe Voltage ( IC= 100uAdc, IE=0 ) V(BR)CBO 200 - Vdc Emitter - Base Breakdowe Voltage ( IE= 100 uAdc, IC=0 ) V(BR)EBO 6.0 - Vdc Collector Cutoff Current ( VCE= 160 Vdc, IE = 0 ) ICBO - 0.1 uAdc Emitter Cutoff Curretn ( VEB= 4.0 Vdc, IC=0 ) IEBO - 0.1 uAdc Characteristic OFF CHARACTERISTICS (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. (3) Pulse Test : Pulse Width 300 uS, Duty Cycle REV. : 0 2.0%. Zowie Technology Corporation Zowie Technology Corporation o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Min. Max. 25 40 40 - VCE(sat) - 0.5 Vdc VBE(sat) - 0.9 Vdc fT 50 - MHZ Ccb - 4.0 pF Symbol Characteristic Unit ON CHARACTERISTICS (3) DC Current Gain ( IC= 1.0 mAdc, VCE= 10 Vdc ) ( IC= 10 mAdc, VCE= 10 Vdc ) ( IC= 30 mAdc, VCE= 10 Vdc ) HFE Collector-Emitter Saturation Voltage - ( IC= 20 mAdc, IB= 2.0 mAdc ) Base-Emitter Saturation Voltage ( IC= 20 mAdc, IB= 2.0 mAdc ) SMALL-SIGNAL CHARACTERISTIC Current-Gain-Bandwidth Product ( IC= 10 mAdc, VCE= 20 Vdc, f=100 MHZ ) Collector-Base Capacitance ( VCB= 20 Vdc, IE=0, f=1.0 MHZ ) (3) Pulse Test : Pulse Width REV. : 0 300 uS, Duty Cycle 2.0%. Zowie Technology Corporation Zowie Technology Corporation MMBTA43 120 VCE = 10 Vdc o TJ = +125 C hFE, DC CURRETN GAIN 100 80 o TJ = 25 C 60 40 o TJ = -55 C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT ( mA ) Figure 1. DC Current Gain 100 tT, CURRENT-GAIN-BANDWIDTH (MHz) 80 C, CAPACITANCE ( pF ) Ceb @ 1MHz 10 1.0 Ccb @ 1MHz 0.1 0.1 1.0 10 100 1000 VCE=20 V f=20MHz o TJ= 25 C 70 60 50 40 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VR, REVERSE VOLTAGE ( VOLTS ) IC, COLLECTOR CURRENT ( mA ) Figure 2. Capacitance Figure 3. Current-Gain-Bandwidth 1.4 o VCE(sat) @ 25 C, IC/IB = 10 1.2 o V, VOLTAGE ( VOLTS ) VCE(sat) @ 125 C, IC/IB = 10 1.0 o VCE(sat) @ -55 C, IC/IB = 10 o VBE(sat) @ 25 C, IC/IB = 10 0.8 o VBE(sat) @ 125 C, IC/IB = 10 o VBE(sat) @ -55 C, IC/IB = 10 0.6 o VBE(on) @ 25 C, VCE = 10 V 0.4 o VBE(on) @ 125 C, VCE = 10 V o VBE(on) @ -55 C, VCE = 10 V 0.2 0.0 0.1 1.0 10 100 IC, COLLECTOR CURRENT ( mA ) Figure 4. "On" Voltages REV. : 0 Zowie Technology Corporation