Zowie Technology Corporation
High Voltage Transistor
NPN Silicon
MMBTA43 1
2
1
2
33
SOT-23
Rating Unit
Characteristic
Collector-Emitter Voltage Vdc
Collector-Base Voltage Vdc
Emitter-Base Voltage Vdc
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
200
200
6.0
500 mAdc
Characteristic
Total Device Dissipation FR-5 Board(1) TA=25oC
Derate above 25oC
Total Device Dissipation Alumina Substrate,(2) TA=25oC
Derate above 25oC
Thermal Resistance Junction to Ambient
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
OFF CHARACTERISTICS
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Emitter - Base Breakdowe Voltage
( IE= 100 uAdc, IC=0 )
Emitter Cutoff Curretn
( VEB= 4.0 Vdc, IC=0 )
Collector-Emitter Breakdowe Voltage(3)
( IC= 1.0mAdc, IB=0 )
Unit
Vdc
Collector-Base Breakdowe Voltage
( IC= 100uAdc, IE=0 ) Vdc
Vdc
uAdc
Collector Cutoff Current
( VCE= 160 Vdc, IE = 0 )
Symbol
V(BR)EBO
V(BR)CEO
IEBO
V(BR)CBO
ICBO
Min.
6.0
200
-
200
-
Max.
-
-
0.1
-
0.1 uAdc
MMBTA43=M1E
Max.
225
1.8
300
2.4
556
417
-55 to +150
Unit
mW
mW / oC
mW
mW / oC
oC / W
oC / W
oC
Symbol
PD
PD
R
JA
R
JA
TJ,TSTG
Zowie Technology CorporationREV. : 0
EMITTER
BASE
COLLECTOR
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
Zowie Technology Corporation
Characteristic Symbol Min. Max. Unit
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)
HFE 25
40
40
-
-
-
-
ON CHARACTERISTICS (3)
VCE(sat) Vdc
DC Current Gain
( IC= 1.0 mAdc, VCE= 10 Vdc )
( IC= 10 mAdc, VCE= 10 Vdc )
( IC= 30 mAdc, VCE= 10 Vdc )
Collector-Emitter Saturation Voltage
( IC= 20 mAdc, IB= 2.0 mAdc ) - 0.5
VBE(sat) Vdc
Base-Emitter Saturation Voltage
( IC= 20 mAdc, IB= 2.0 mAdc ) - 0.9
fT
Ccb
50
-
-
4.0
MHZ
SMALL-SIGNAL CHARACTERISTIC
pF
Current-Gain-Bandwidth Product
( IC= 10 mAdc, VCE= 20 Vdc, f=100 MHZ )
Collector-Base Capacitance
( VCB= 20 Vdc, IE=0, f=1.0 MHZ )
Zowie Technology CorporationREV. : 0
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation MMBTA43
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT ( mA )
hFE, DC CURRETN GAIN
Figure 2. Capacitance
VR, REVERSE VOLTAGE ( VOLTS )
Figure 4. "On" Voltages
IC, COLLECTOR CURRENT ( mA )
C, CAPACITANCE ( pF )
tT, CURRENT-GAIN-BANDWIDTH (MHz)
IC, COLLECTOR CURRENT ( mA )
V, VOLTAGE ( VOLTS )
Figure 3. Current-Gain-Bandwidth
TJ = +125oC
TJ = 25oC
TJ = -55oC
VCE = 10 Vdc
VCE=20 V
f=20MHz
TJ= 25oC
120
0.1 1.0 10
100
80
60
0100
20
40
0.1
100
0.1
10
1.0 10 1000
100
1.0
Ceb @ 1MHz
Ccb @ 1MHz
10070503020107.05.03.02.0
80
70
50
30
20
101.0
60
40
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100100.1 1.0
VCE(sat) @ 25oC, IC/IB = 10
VCE(sat) @ 125oC, IC/IB = 10
VCE(sat) @ -55oC, IC/IB = 10
VBE(sat) @ 25oC, IC/IB = 10
VBE(sat) @ 125oC, IC/IB = 10
VBE(sat) @ -55oC, IC/IB = 10
VBE(on) @ 25oC, VCE = 10 V
VBE(on) @ 125oC, VCE = 10 V
VBE(on) @ -55oC, VCE = 10 V
