SOT23 PNP SILICON PLANAR BCW67
MEDIUM POWER TRANSISTORS BCW68
ISSUE 4- JUNE 1996 II
PARTMARKING DETAILS -11
BCW67A -DA BCW67AR -4W
BCW67B -DB BCW67BR -5W
BCW67C -DC BCW67CR -6W
BCW68F -DF BCW68FR -7T
BCW68G -DG BCW68GR -5T
BCW68H -DH BCW68HR -7N
COMPLEMENTARY TYPES -ISOT23
BCW67 -BCW65
BCW68 -BCW66
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
*3 ‘-”--:
SYMBOL
~
BCW67 BCW68 UNIT
———_
Collector-Emitter Voltage vCES -45 -60 ‘v
_.— —..———
Collector-Eminer Voltage v-32- -45
CEO__ .._ _v
—-..———
Emitter-Base voltage ‘EBO_ -5’ v
—— ——
Peak Pulse Current(lOms) ICM -1000
1
mA
. .. ————... —
Continuous Collector Current Ic -800 mA
——— —.. .— —.—— ..—————
Base Current IB ‘– -100 mA
——_—_.. —.—_.—
Power Dissipation at Tamb=250C P-“—”””-zO——- “—-–—mw
tot
.—
Operating and Storage Temperature Rar:ae T::T-. +-55 to +150 cc
3-29
BCW67
BCW68
ELECTRICAL CHARACTERISTICS (at Tamb ❑25°C unless otherwise etated).
PARAMETER SVMBOL MIN. lYP. MAX. UNIT CONDITIONS.
Collector-Emittsrr BCW87 ‘(BR)CEO -32 vlc-&-lOmA
Breakdown Voltage BCW88 -45 lcE&-lOmA
BCW87 ‘(FIR)CES -45 II I IC=-lOLA
BCW88 -80 IF-IOWA
,,
Emitter-Base Braakdown Voltaga v(aR)Eao -5 vl~ao =-10yA
Collector-Emitter BCW67 ICES -20 nA
Cut-off Current VcEs =-32V
-10 @V=Sd2V ,Ttilw”C
BCW88 I1I-20 nA
-lo vcE~=-45v
PA Vm@SV ,Tah=HPC
,, , ,I
Emitter-Base Cut-Off Current IESO -20 nA VEao=-4”
Collector-Emitter Saturation Voltage ‘CE(sat) -0.3 v&loornA Is.-lorlul
-0.7 v&-500mA. Is+0-r&
Base-Emitter saturation Voltage vBE(sat) [-2 vl+L)Om~ lB.-5CrmA*
Static BCW87A h~E 75 1~-10m~ VCE.-lV
Forward BCW8BF 100 170 250 1~-100m~ VCE=-l V*
Current 35 l#OOmA. VCE=-2V*
Transfar BCVVB7B h~~ 120 1~-10mA, VCE=-lV
BCWB8G 180 250 400 1~-100mA. VCE=-l V*
&l l#OOm~ VCE=-2V*
BCW87C hFE 180 1~-10mA, VCE.-l V
BCW88H 250 350 830 1~-100mA, Vc~ .-l V*
100 l#OOm~ VCE.-2V*
,
Transition Frequency fT 100 IIMHz Ic =-20mA, VCE=-1 OV
f=100 MHz
t
Collector-Basa capacitance Cti 12 18 pF VCso =-10”, f=1 MHz
I
Emitter-Besa Capacitance c;
ebo 84 pF VEao=-0.5V, f=1 MHz
Noise Figure N210 dB ~:;”I?)=%-l=- w
Af=200Hz
Switching times:
Turn-On Time t100 ns le-150mA
Turn-Off Time t; 400 ns ~il;~;-15mA
Spice parameter data is available upon request for this device
. .
*Measured under pulsed conditions. Pulse width=300#s. Duty cycle <2%
3-30
