Single N-Channel Trench MOSFET 30V, 7.2A, 28m General Description Features The MDS1656 uses advanced MagnaChip's trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application. VDS = 30V ID = 7.2A @VGS = 10V RDS(ON) < 28m @VGS = 10V < 42m @VGS = 4.5V Applications Inverters General purpose applications D 6(D) 7(D) 8(D) 5(D) 2(S) G 4(G) 3(S) 1(S) S Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Characteristics Symbol Drain-Source Voltage Gate-Source Voltage TC=25oC Continuous Drain Current(1) TC=70oC Pulsed Drain Current Rating Unit VDSS 30 V VGSS 20 V 7.2 A ID IDM TC=25oC Power Dissipation TC=70oC Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range PD 6.2 A 30 A 2 W 1.44 EAS 20 TJ, Tstg -55~150 mJ o C Thermal Characteristics Symbol Rating Thermal Resistance, Junction-to-Ambient(Steady-State)(1) Characteristics RJA 100 Thermal Resistance, Junction-to-Case RJC 60 August 2008. Version 1.0 1 Unit o C/W MagnaChip Semiconductor Ltd. MDS1656- N-Channel Trench MOSFET 30V, 7.2A,28m MDS1656 Part Number Temp. Range Package Packing RoHS Status MDS1656R -55~150oC SO-8 Tape & Reel Halogen Free Electrical Characteristics (Ta =25oC unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.0 1.9 3.0 Drain Cut-Off Current IDSS VDS = 24V, VGS = 0V - Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1 VGS = 10V, ID = 6.9A - 21.5 28 VGS = 4.5V, ID = 5.0A - 31.5 42 VDS = 5V, VGS = 4.5V 20 - - A VDS = 5V, ID = 6.9A 10 15.4 - S - - - 6.94 - - 1.54 - - 1.4 - - 334 - Drain-Source ON Resistance On-State Drain Current Forward Transconductance RDS(ON) ID(ON) gFS Maximum Body-Diode Continuous Current 1 V A m Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 15V, ID = 6.9A, VGS = 10V VDS = 15V, VGS = 0V, f = 1.0MHz nC pF Reverse Transfer Capacitance Crss - 48 - Output Capacitance Coss - 83 - Turn-On Delay Time td(on) - 3.5 - - 25.4 - - 14.2 - - 10.5 - - 0.75 1.0 V - 16.5 20 ns - 7.8 10 nC Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time VGS = 10V ,VDS = 15V, RL = 2.2, RGEN = 3 tf ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 1A, VGS = 0V IF = 6.9A, di/dt = 100A/s Notes : 1. Surface mounted RF4 board with 2oz. Copper.. 2. Starting TJ = 25C, L = 1mH, IAS = 5A, VDD = 15V, VGS = 10V. August 2008. Version 1.0 2 MagnaChip Semiconductor Ltd. MDS1656- N-Channel Trench MOSFET 30V, 7.2A,28m Ordering Information 10V 6.0V 5.0V 25 50 4.5V RDS(ON) [m ] 20 ID (A) 4.0V 15 10 40 30 3.5V 20 5 VGS=3V 10 0 0 1 2 3 4 0 5 5 10 20 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.8 70 Notes : 1. VGS = 10 V 2. ID = 20 A 1.6 RDS(ON) [m ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 15 -ID [A] VDS (Volts) 1.4 VGS=10V VGS=4.5V 1.2 1.0 60 50 TA = 125 40 30 TA = 25 20 0.8 0.6 -50 10 -25 0 25 50 75 100 125 2 150 4 6 8 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 10 20 15 25 IS [A] ID (A) 125 10 1 125 5 25 0.1 0.3 0 0 1 2 3 4 5 0.5 0.6 0.7 0.8 0.9 1.0 VSD [V] VGS (Volts) Fig.5 Transfer Characteristics August 2008. Version 1.0 0.4 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDS1656- N-Channel Trench MOSFET 30V, 7.2A,28m 60 30 500 Note : ID = 20A 8 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 450 400 Ciss Capacitance [pF] 350 6 4 300 250 200 150 100 2 Crss 0 0 0 2 4 6 0 8 5 10 Fig.7 Gate Charge Characteristics 25 30 8.0 2 7.5 7.0 6.5 100 s 6.0 1 ID, Drain Current [A] 1 ms 10 ms 100 ms 1s 10 20 Fig.8 Capacitance Characteristics Operation in This Area is Limited by R DS(on) 10 15 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 10 Notes ; 1. VGS = 0 V 2. f = 1 MHz Coss 50 ID, Drain Current [A] MDS1656- N-Channel Trench MOSFET 30V, 7.2A,28m 10 DC 0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 10 Single Pulse TJ=Max rated TC=25 -1 1.0 0.5 0.0 10 -1 10 0 10 1 10 25 2 Fig.9 Maximum Safe Operating Area 75 100 125 150 Fig.10 Maximum Drain Current vs. Case Temperature D=0.5 2 10 Z JC(t), Normalized Thermal Response 50 T C, Case Temperature [ ] VDS, Drain-Source Voltage [V] 0.2 0.1 1 10 0.05 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JC* R JC(t) + TC R JA=100/W 0.02 single pulse 0 10 0.01 -1 10 -6 10 -5 10 -4 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve August 2008. Version 1.0 4 MagnaChip Semiconductor Ltd. MDS1656- N-Channel Trench MOSFET 30V, 7.2A,28m Physical Dimensions 8 Leads SOIC Dimensions are in millimeters unless otherwise specified August 2008. Version 1.0 5 MagnaChip Semiconductor Ltd. U.S.A Sunnyvale Office 787 N. 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(C) 20021 Shanghai, China Tel : 86-21-6373-5181 Fax : 86-21-6373-6640 Korea 891, Daechi-Dong, Kangnam-Gu Seoul, 135-738 Korea Tel : 82-2-6903-3451 Fax : 82-2-6903-3668 ~9 Email : koreasales@magnachip.com Osaka Office 3F, Shin-Osaka MT-2 Bldg 3-5-36 Miyahara Yodogawa-Ku Osaka, 532-0003 Japan Tel : 81-6-6394-8224 Fax : 81-6-6394-8282 E-Mail : osakasales@magnachip.com DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. August 2008. Version 1.0 6 MagnaChip Semiconductor Ltd. MDS1656- N-Channel Trench MOSFET 30V, 7.2A,28m Worldwide Sales Support Locations