G E SOLID STATE 3875081 GE SOLID STATE 2N5911, 2N5912, ITC5911, ITC5912, 1T5911, IT5912 2N5911, 2N5912, ITC5911, ITC5912, IT5911, IT5912 Dual N-Channel JFET High Frequency Amplifier FEATURES Tight Tracking Low Insertion Loss Good Matching PIN CONFIGURATION TO-99 TO-71 (2N5911-12) (iT5911-12) (i105914-12) Dal Sz ll Go Cam & 6 eat 60112N5911-12, ITC5911-12 60222N59 11-12, ITC5911-12 ORDERING INFORMATION TO-71 TO-99 Wafer Dice IT5911 2N5911 2N5911/W 2N5911/D IT5912 2N5912 2N5912/W 2N5912/D 1 de 3azsoai oowo10 o D1E 11010 oD T- 3-27 R2INMERSIL ABSOLUTE MAXIMUM RATINGS (Ta= 25C unless otherwise noted) Gate-Drain or Gate-Source Voltage ............6.- 25V Gate Current ....... 0... c cece cece eect een e tees 50mA Storage Temperature Range .......... 65C to + 200C Operating Temperature Range ........ 55C to + 150C Lead Temperature (Soldering, 10sec) ........+.. +300C TO-71 TO-99 One Both One Both Side Sides Side Sides Power Dissipation .... 200mW 400mW 367mW 500mW Derate above BBC coseneeee 1.6mW/C 3.2mW/C 8.0mW/C 4.0mMW/G NOTE: Strasses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ere stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extanded peri- ods may aifect device reliability. ELECTRICAL CHARACTERISTICS (ta = 25C unless otherwise specified) Symbol Parameter Test Conditions Min Max Units lass Gate Reverse Current Vas= 18V, Vps=0 100 pA Ta= 150C 250 nA BVgss Gate Reverse Breakdown Voltage Ig= 1pA, Vog=0 25 Vestn Gate-Source Cutoff Voltage Vosg=10V, Ip=1nA -1 -5 v Vas Gate-Source Voltage Vo = 10V, Ip=5mA 0.3 -4 le Gate Operating Currant 100 pA Ta= 150C 100 nA Ipss Saturation Drain Current (Pulsewidth 300zs, Vos= 10V, Vag=0V 7 40 mA duty cycle< 3%) of, Common-Source Forward Transconductance Voe= 10V, Ip=5mA f= 1kHz 5000 10,000 gf, Common-Source Forward Transconductance (Note 1) f=100MHz 5000 10,000 pS Jos Common-Source Output Conductance f= kHz 100 Goss Commen-Source Output Conductance (Note 1) f=100MHz 160 Cisg Cormmon-Source Input Capacitance (Note 1) f=1MHz 5 pF Cres Common-Sourcs Reverse Transfer Capacitance (Note 1) 1.2 en Equivalent Short Circuit Input Noise Voltage (Note 1) 1=10kHz 20 a NF Spot Notse Figure (Note 1) t= 10kHz 4 dB Re= 100kn INTERSIL'S SOLE AND EXCLUSIVE WARRANTY OBLIGATION WITH RESPECT TO THIS PRODUCT SHALL BE THAT STATED IN THE WARRANTY ARTICLE OF THE CONDITION OF SALE. THE WARRANTY SHALL BE EXCLUSIVE AND SHALL BE IN LIEU OF ALL OTHER WARRANTIES, EXPRESS, IMPLIED OR STATUTORY, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR USE. NOTE: Af typical values have been characterized but are not tested. 10-58 ae G E SOLID STATE on def) sa7soa1 coi. PD 3875081 GE SOLID STATE DIE 1101T D 2N5911, 2N5912, ITC5911, ITC5912, ESINTERSIL IT5911, IT5912 T-3/-a7 ELECTRICAL CHARACTERISTICS (continued) (T, = 25C unless otherwise specified) Symbo! Parameter Test Conditions IT, 2N6911 | IT, 2N6912 Units Min | Max | Min | Max lat-leel Differential Gate Current Vag = 10V, Ip=5mA | Ta= 125C 20 20 nA lossi Saturation Drain Current Ratio | Vpg=10V, Veg=0 oss| i joss] 4 Ipsse (Pulsewidth 300s, duty cycle <3%) , . |Vasi-Vase| | Differential Gate-Source Voltage 10 15 | mV A|Vas1-Vasal | Gate-Source Voitage Differential Ta = 25C 20 40 AT Drift (Measured at end points, Tg = 128C ie Ta and Tg) Voq= 10V, Ip=5mA are Tas 85C 20 40 Tp= 25C ae Transconductance Ratio f= 1kHz o95| 4 oss! 4 Si NOTE 1: For design raferance only, not 100% tested. ZIGSLI LEGSLI SLGSOLI BLGSOLI SLGGNZ LLGGNZ INTERSIL'S SOLE AND EXCLUSIVE WARRANTY OBLIGATION WITH RESPECT TO THIS PRODUCT SHALL BE THAT STATED IN THE WARRANTY ARTICLE OF THE CONDITION OF SALE. THE WARRANTY SHALL BE SXCLUSIVE AND SHALL GE IN LIEU OF ALL OTHER WARRANTIES, EXPRESS, IMPLIED OR STATUTORY, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR USE. NOTE: Ail typical values have been characterized but ara nat tested. 10-59