VSMY9857535
www.vishay.com Vishay Semiconductors
Rev. 1.0, 05-Jul-16 1Document Number: 84359
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Power Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY9857535 is an
infrared, 850 nm emitting diode based on surface emitter
technology with high radiant power and high speed, molded
in low thermal resistance SMD package with lens. A 35 mil
chip provides outstanding radiant intensity and allows
DC operation of the device up to 1.0 A.
FEATURES
• Package type: surface mount
• Package form: high power SMD with lens
• Dimensions (L x W x H in mm): 3.85 x 3.85 x 1.51
• Peak wavelength: λp = 850 nm
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 75°
• Designed for high drive currents: up to 1.0 A (DC)
and up to 5 A pulses
• Low thermal resistance: RthJP = 10 K/W
• Floor life: 168 h, MSL 3, according to J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared illumination for CMOS cameras (CCTV, 3D
gaming)
• Machine vision
• Bio identification
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
VSMY9857535 180 ± 75 850 30
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMY9857535 Tape and reel MOQ: 600 pcs, 600 pcs/reel High power with lens
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF1A
Peak forward current tp/T = 0.5, tp = 100 μs IFM 2A
Surge forward current tp = 100 μs IFSM 5A
Power dissipation PV2.5 W
Junction temperature Tj115 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -55 to +100 °C
Soldering temperature According to Fig. 10, J-STD-20 Tsd 260 °C
Thermal resistance junction / pin JESD 51 RthJP 10 K/W
VSMY9857535
www.vishay.com Vishay Semiconductors
Rev. 1.0, 05-Jul-16 2Document Number: 84359
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
0.5
1.0
1.5
2.0
2.5
3.0
0 20406080100
PV- Power Dissipation (W)
Tamb - Ambient Temperature (°C)
R
thJA
= 10 K/W
0
0.2
0.4
0.6
0.8
1.0
1.2
0 20406080100
IF- Forward Current (A)
Tamb - Ambient Temperature (°C)
R
thJA
= 10 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 1 A, tp = 20 ms VF-1.82.5V
IF = 5 A, tp = 100 μs VF-2.7-V
Temperature coefficient of VFIF = 100 mA TKVF --1.5-mV/K
Reverse current VR = 5 V IRNot designed for reverse operation μA
Radiant intensity IF = 1 A, tp = 20 ms Ie100 180 - mW/sr
IF = 5 A, tp = 100 μs Ie-900-mW/sr
Radiant power IF = 1 A, tp = 20 ms φe-630-mW
Temperature coefficient of φeIF = 100 mA TKφe- -0.13 - %/K
Angle of half intensity ϕ-± 75-deg
Peak wavelength IF = 1 A λp-850-nm
Spectral bandwidth IF = 1 A Δλ -35-nm
Temperature coefficient of λpIF = 100 mA TKλp-0.2-nm/K
Rise time IF = 1 A tr-30-ns
Fall time IF = 1 A tf-30-ns
VSMY9857535
www.vishay.com Vishay Semiconductors
Rev. 1.0, 05-Jul-16 3Document Number: 84359
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Forward Voltage vs. Ambient Temperature
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
Fig. 8 - Relative Radiant Intensity vs. Wavelength
0.1
1
10
1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
IF- Forward Current (A)
VF- Forward Voltage (V)
tp= 100 μs
1.20
1.30
1.40
1.50
1.60
1.70
-50-250 255075100
VF- Forward Voltage (V)
Tamb - Ambient Temperature (°C)
IF= 100 mA
tp= 20 ms
80
85
90
95
100
105
110
115
120
-60 -40 -20 0 20 40 60 80 100
VF, rel - Relative Forward Voltage (%)
Tamb - Ambient Temperature (°C)
IF= 100 mA
tp= 20 ms
10
100
1000
0.1 1.0 10
I
e
- Radiant Intensity (mW/sr)
I
F
- Forward Current (A)
t
p
= 100 μs
80
85
90
95
100
105
110
115
120
-60 -40 -20 0 20 40 60 80 100
Ie, rel - Relative Radiant Intensity (%)
Tamb - Ambient Temperature (°C)
IF= 100 mA
tp= 20 ms
0
10
20
30
40
50
60
70
80
90
100
700 750 800 850 900 950 1000
Ie, rel - Relative Radiant Intensity (%)
λ- Wavelength (nm)
IF= 1000 mA
tp= 20 μs
VSMY9857535
www.vishay.com Vishay Semiconductors
Rev. 1.0, 05-Jul-16 4Document Number: 84359
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
TAPING DIMENSIONS in millimeters
Notes
• Empty component pockets sealed with top cover tape.
• 7 inch reel - 600 pieces per reel.
• The maximum number of consecutive missing lamps is two.
• In accordance with ANSI / EIA 481-1-A-1994 specifications.
Ie, rel - Relative Radiant Intensity
0.6
80°
0°
0.7
0.4 0.2 0
30°
70°
60°
50°
40°
10° 20°
1.0
0.9
0.8
ϕ - Angular Displacement
Ø 178 ± 2.0
(7.0 ± 0.08)
Ø 60 ± 1.0
(2.36 ± 0.39)
Ø 13.0 (0.512)
typ.
14.40 (0.57) typ.
4.00 ± 0.10
8.00 ± 0.10
12.00 + 0.30
- 0.10
2.00 ± 0.05
1.75 ± 0.10
5.50 ± 0.05
Ø 1.50 + 0.10
Ø 1.50 + 0.25
Cathode
VSMY9857535
www.vishay.com Vishay Semiconductors
Rev. 1.0, 05-Jul-16 5Document Number: 84359
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
Notes
• Tolerance is ± 0.10 mm (0.004") unless otherwise noted.
• Specifications are subject to change without notice.
SOLDER PAD PROPOSAL
3.85 ± 0.1
3.85 ± 0.1
1.00
2.80
2.70
1.90
Anode
1.6
1.51 ± 0.1
R1.6
R0.4
0.40 ± 0.05
0.15 ± 0.05
2.8
2.8
0.5 1.0
VSMY9857535
www.vishay.com Vishay Semiconductors
Rev. 1.0, 05-Jul-16 6Document Number: 84359
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOLDER PROFILE
Fig. 10 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 3, according to J-STD-020B
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
255 °C to 260 °C
10 s max.
6 °C/s max.
3 °C/s max.
3 °C/s max.
150 °C
200 °C
217 °C
60 s to 120 s60 s max.
Time
Temperature
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Revision: 01-Jan-2019 1Document Number: 91000
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