TZX... Vishay Semiconductors Silicon Epitaxial Planar Z-Diodes Features Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications 94 9367 Voltage stabilization Order Instruction Type TZX2V4A Ordering Code Remarks TZX2V4A-TAP Ammopack Absolute Maximum Ratings Tj = 25C Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature Tj 175 C Tstg -65...+175 C l=4 mm, TL=25 C Power dissipation Storage temperature range Maximum Thermal Resistance Tj = 25C Parameter Test Conditions Junction ambient l=4 mm, TL=constant Symbol Value Unit RthJA 300 K/W Electrical Characteristics Tj = 25C Parameter Forward voltage Document Number 85614 Rev. A6, 08-Aug-02 Test Conditions IF=200mA Type Symbol VF Min Typ Max Unit 1.5 V www.vishay.com 1 (8) TZX... Vishay Semiconductors Type Ty e VZmin. (V) VZmax . (V) TZX2V4 23 2.3 26 2.6 TZX2V7 2.5 2.9 TZX3V0 2.8 3.2 TZX3V3 3.1 3.5 TZX3V6 3.4 3.8 TZX3V9 3.7 4.1 TZX4V3 40 4.0 45 4.5 TZX4V7 44 4.4 49 4.9 TZX5V1 48 4.8 53 5.3 TZX5V6 5.2 5.9 www.vishay.com 2 (8) Type Ty e TZX2V4A TZX2V4B TZX2V7A TZX2V7B TZX2V7C TZX3V0A TZX3V0B TZX3V0C TZX3V3A TZX3V3B TZX3V3C TZX3V6A TZX3V6B TZX3V6C TZX3V9A TZX3V9B TZX3V9C TZX4V3A TZX4V3B TZX4V3C TZX4V3D TZX4V7A TZX4V7B TZX4V7C TZX4V7D TZX5V1A TZX5V1B TZX5V1C TZX5V1D TZX5V6A TZX5V6B TZX5V6C TZX5V6D TZX5V6E VZmin. (V) 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 VZmax. rZmax. (V) 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.5 5.6 5.7 5.8 5.9 () 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 40 40 40 40 40 at IZ IRmax. at VR IRmax2) at VR2) (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 (A) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 (V) 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1 1 1 1 1 1 1 1 1 1.5 1.5 1.5 1.5 2 2 2 2 2 2 2 2 2 2 2 2 2 (A) 50 50 10 10 10 6 6 6 2 2 2 2 2 2 2 2 2 1.0 1.0 1.0 1.0 0.5 0.5 0.5 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Document Number 85614 Rev. A6, 08-Aug-02 TZX... Vishay Semiconductors Type Ty e VZmin. VZmax . (V) Type Ty e (V) TZX6V2 5.7 6.6 TZX6V8 64 6.4 72 7.2 TZX7V5 70 7.0 79 7.9 TZX8V2 77 7.7 87 8.7 TZX9V1 8.5 9.7 TZX10 95 9.5 10 6 10.6 TZX11 10 4 10.4 11 6 11.6 TZX12 11.4 12.7 TZX13 12.4 13.4 Document Number 85614 Rev. A6, 08-Aug-02 TZX6V2A TZX6V2B TZX6V2C TZX6V2D TZX6V2E TZX6V8A TZX6V8B TZX6V8C TZX6V8D TZX7V5A TZX7V5B TZX7V5C TZX7V5D TZX8V2A TZX8V2B TZX8V2C TZX8V2D TZX9V1A TZX9V1B TZX9V1C TZX9V1D TZX9V1E TZX10A TZX10B TZX10C TZX10D TZX11A TZX11B TZX11C TZX11D TZX12A TZX12B TZX12C TZX12D TZX12X TZX13A TZX13B TZX13C VZmin. VZmax. rZmax. at IZ IRmax. at VR (V) 5.7 5.8 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.5 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.2 10.4 10.7 10.9 11.1 11.4 11.6 11.9 12.2 11.44 12.4 12.6 12.9 (V) 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.6 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.6 10.8 11.1 11.3 11.6 11.9 12.1 12.4 12.7 12.03 12.9 13.1 13.4 (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 (A) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 (V) 3 3 3 3 3 3.5 3.5 3.5 3.5 5.0 5.0 5.0 5.0 6.2 6.2 6.2 6.2 6.8 6.8 6.8 6.8 6.8 7.5 7.5 7.5 7.5 8.2 8.2 8.2 8.2 9.5 9.5 9.5 9.5 9.5 10 10 10 () 15 15 15 15 15 15 15 15 15 15 15 15 15 20 20 20 20 20 20 20 20 20 25 25 25 25 25 25 25 25 35 35 35 35 35 35 35 35 IRmax2). at VR2) (A) 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 - - - - - - - - - - - - - - - - - - - - - (V) 2.0 2.0 2.0 2.0 2.0 3.0 3.0 3.0 3.0 3.5 3.5 3.5 3.5 4.0 4.0 4.0 4.0 - - - - - - - - - - - - - - - - - - - - - www.vishay.com 3 (8) TZX... Vishay Semiconductors Type Ty e VZmin. (V) VZmax . Type Ty e (V) TZX14 13.2 14.3 TZX15 14 1 14.1 15 5 15.5 TZX16 15.3 17.1 TZX18 16.9 19.0 TZX20 18.8 21.2 TZX22 20.9 23.3 TZX24 22 9 22.9 25 5 25.5 TZX27 25 2 25.2 28 6 28.6 TZX30 28 2 28.2 31 6 31.6 TZX33 31.2 34.5 TZX36 34 2 34.2 38 0 38.0 TZX14A TZX14B TZX14C TZX15A TZX15B TZX15C TZX15X TZX16A TZX16B TZX16C TZX18A TZX18B TZX18C TZX20A TZX20B TZX20C TZX22A TZX22B TZX22C TZX24A TZX24B TZX24C TZX24X TZX27A TZX27B TZX27C TZX27X TZX30A TZX30B TZX30C TZX30X TZX33A TZX33B TZX33C TZX36A TZX36B TZX36C TZX36X VZmin. VZmax. rZmax. at IZ IRmax. at VR (V) 13.2 13.5 13.8 14.1 14.5 14.9 14.35 15.3 15.7 16.3 16.9 17.5 18.1 18.8 19.5 20.2 20.9 21.6 22.3 22.9 23.6 24.3 22.61 25.2 26.2 27.2 26.99 28.2 29.2 30.2 29.02 31.2 32.2 33.2 34.2 35.3 36.4 35.36 (V) 13.7 14.0 14.3 14.7 15.1 15.5 15.09 15.9 16.5 17.1 17.7 18.3 19.0 19.7 20.4 21.2 21.9 22.6 23.3 24.0 24.7 25.5 23.77 26.6 27.6 28.6 28.39 29.6 30.6 31.6 30.51 32.6 33.6 34.5 35.7 36.8 38.0 37.19 (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 (A) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 (V) 11 11 11 11.5 11.5 11.5 11.5 12 12 12 13 13 13 15 15 15 17 17 17 19 19 19 19 21 21 21 21 23 23 23 23 25 25 25 27 27 27 27 () 35 35 35 40 40 40 40 45 45 45 55 55 55 60 60 60 65 65 65 70 70 70 70 80 80 80 80 100 100 100 100 120 120 120 140 140 140 140 IRmax2). at VR2) (A) - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - (V) - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2) Additional measurement Please note: Additional measurement of voltage group 9V1 to 36 IR at 95 % VZmin = < 35 nA at Tj 25 C www.vishay.com 4 (8) Document Number 85614 Rev. A6, 08-Aug-02 TZX... Vishay Semiconductors 500 1.3 VZtn - Relative Voltage Change 400 300 l l 200 100 TKVZ=1010 -4/K 810 -4/K 610 -4/K 1.1 410 -4/K 210 -4/K 0 -210 -4/K 1.0 -410 -4/K 0.9 TL=constant 0 5 10 l - Lead Length ( mm ) 500 400 300 200 100 0 40 80 120 160 200 Tamb - Ambient Temperature ( C ) 95 9602 0 120 180 240 Figure 4. Typical Change of Working Voltage vs. Junction Temperature 15 10 5 IZ=5mA 0 -5 0 10 20 30 40 50 VZ - Z-Voltage ( V ) 95 9600 Figure 2. Total Power Dissipation vs. Ambient Temperature 60 Tj - Junction Temperature ( C ) 95 9599 600 0 0.8 -60 20 15 Figure 1. Thermal Resistance vs. Lead Length Ptot - Total Power Dissipation ( mW ) 1.2 0 95 9611 Figure 5. Temperature Coefficient of Vz vs. Z-Voltage 1000 200 CD - Diode Capacitance ( pF ) VZ - Voltage Change ( mV ) VZtn=VZt/VZ(25C) TK VZ - Temperature Coefficient of VZ ( 10 -4/K ) R thJA - Therm. Resist. Junction / Ambient ( K/W ) Characteristics (Tj = 25C unless otherwise specified) Tj=25C 100 IZ=5mA 10 150 VR=2V Tj=25C 100 50 1 0 0 5 95 9598 10 15 20 25 VZ - Z-Voltage ( V ) Figure 3. Typical Change of Working Voltage under Operating Conditions at Tamb=25C Document Number 85614 Rev. A6, 08-Aug-02 0 95 9601 5 10 15 20 25 VZ - Z-Voltage ( V ) Figure 6. Diode Capacitance vs. Z-Voltage www.vishay.com 5 (8) TZX... 100 50 10 40 IZ - Z-Current ( mA ) IF - Forward Current ( mA ) Vishay Semiconductors Tj=25C 1 0.1 Ptot=500mW Tamb=25C 30 20 0.01 10 0.001 0 0 0.2 0.4 0.6 1.0 0.8 15 VF - Forward Voltage ( V ) 95 9605 35 30 Figure 9. Z-Current vs. Z-Voltage 1000 r Z - Differential Z-Resistance ( ) 100 80 IZ - Z-Current ( mA ) 25 VZ - Z-Voltage ( V ) Figure 7. Forward Current vs. Forward Voltage Ptot=500mW Tamb=25C 60 40 20 IZ=1mA 100 5mA 10 10mA Tj=25C 1 0 0 4 8 12 0 20 16 95 9606 VZ - Z-Voltage ( V ) 95 9604 Figure 8. Z-Current vs. Z-Voltage Zthp - Thermal Resistance for Pulse Cond. (K/W) 20 95 9607 5 10 15 20 25 VZ - Z-Voltage ( V ) Figure 10. Differential Z-Resistance vs. Z-Voltage 1000 tp/T=0.5 100 tp/T=0.2 Single Pulse 10 RthJA=300K/W T=Tjmax-Tamb tp/T=0.01 tp/T=0.1 tp/T=0.02 iZM=(-VZ+(VZ2+4rzjT/Zthp)1/2)/(2rzj) tp/T=0.05 1 10-1 95 9603 100 101 102 tp - Pulse Length ( ms ) Figure 11. Thermal Response www.vishay.com 6 (8) Document Number 85614 Rev. A6, 08-Aug-02 TZX... Vishay Semiconductors Dimensions in mm Cathode Identification 0.55 max. technical drawings according to DIN specifications 94 9366 1.7 max. Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Weight max. 0.3g Document Number 85614 Rev. A6, 08-Aug-02 26 min. 3.9 max. 26 min. www.vishay.com 7 (8) TZX... Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 8 (8) Document Number 85614 Rev. A6, 08-Aug-02