TZX10B-GPS - Vishay - Datasheet.Live

TZX...

Vishay Semiconductors

Rev. A6, 08-Aug-02 1 (8)

www.vishay.comDocument Number 85614

Silicon Epitaxial Planar Z–Diodes

Features

Very sharp reverse characteristic

Low reverse current level

Very high stability

Low noise

Available with tighter tolerances

Applications

Voltage stabilization 94 9367

Order Instruction

Type Ordering Code Remarks

TZX2V4A TZX2V4A–TAP Ammopack

Absolute Maximum Ratings

Tj = 25CParameter Test Conditions Type Symbol Value Unit

Power dissipation l=4 mm, TL=25 °C PV500 mW

Z–current IZPV/VZmA

Junction temperature Tj175 °C

Storage temperature range Tstg –65...+175 °C

Maximum Thermal Resistance

Tj = 25CParameter Test Conditions Symbol Value Unit

Junction ambient l=4 mm, TL=constant RthJA 300 K/W

Electrical Characteristics

Tj = 25C

Parameter Test Conditions Type Symbol Min Typ Max Unit

Forward voltage IF=200mA VF1.5 V

TZX...

Vishay Semiconductors

Rev. A6, 08-Aug-022 (8)

www.vishay.com Document Number 85614

pe VZmin. VZmax

pe VZmin. VZmax. rZmax. at IZIRmax. at VRIRmax2) at VR2)

Ty e

(V) (V)

Ty e

(V) (V) () (mA) (A) (V) (A) (V)

TZX2V4

TZX2V4A 2.3 2.5 100 5 5 0.5 50 1.0

TZX2V4 2.3 2.6 TZX2V4B 2.4 2.6 100 5 5 0.5 50 1.0

TZX2V7A 2.5 2.7 100 5 5 0.5 10 1.0

TZX2V7 2.5 2.9 TZX2V7B 2.6 2.8 100 5 5 0.5 10 1.0

TZX2V7

2.5

2.9

TZX2V7C 2.7 2.9 100 5 5 0.5 10 1.0

TZX3V0A 2.8 3.0 100 5 5 0.5 6 1.0

TZX3V0 2.8 3.2 TZX3V0B 2.9 3.1 100 5 5 0.5 6 1.0

TZX3V0

2.8

3.2

TZX3V0C 3.0 3.2 100 5 5 0.5 6 1.0

TZX3V3A 3.1 3.3 100 5 5 1 2 0.8

TZX3V3 3.1 3.5 TZX3V3B 3.2 3.4 100 5 5 1 2 0.8

TZX3V3

3.1

3.5

TZX3V3C 3.3 3.5 100 5 5 1 2 0.8

TZX3V6A 3.4 3.6 100 5 5 1 2 0.8

TZX3V6 3.4 3.8 TZX3V6B 3.5 3.7 100 5 5 1 2 0.8

TZX3V6

3.4

3.8

TZX3V6C 3.6 3.8 100 5 5 1 2 0.8

TZX3V9A 3.7 3.9 100 5 5 1 2 0.8

TZX3V9 3.7 4.1 TZX3V9B 3.8 4.0 100 5 5 1 2 0.8

TZX3V9

3.7

4.1

TZX3V9C 3.9 4.1 100 5 5 1 2 0.8

TZX4V3A 4.0 4.2 100 5 5 1.5 1.0 1.0

TZX4V3

TZX4V3B 4.1 4.3 100 5 5 1.5 1.0 1.0

TZX4V3 4.0 4.5 TZX4V3C 4.2 4.4 100 5 5 1.5 1.0 1.0

TZX4V3D 4.3 4.5 100 5 5 1.5 1.0 1.0

TZX4V7A 4.4 4.6 100 5 5 2 0.5 1.0

TZX4V7

TZX4V7B 4.5 4.7 100 5 5 2 0.5 1.0

TZX4V7 4.4 4.9 TZX4V7C 4.6 4.8 100 5 5 2 0.5 1.0

TZX4V7D 4.7 4.9 100 5 5 2 0.5 1.0

TZX5V1A 4.8 5.0 100 5 5 2 0.1 1.0

TZX5V1

TZX5V1B 4.9 5.1 100 5 5 2 0.1 1.0

TZX5V1 4.8 5.3 TZX5V1C 5.0 5.2 100 5 5 2 0.1 1.0

TZX5V1D 5.1 5.3 100 5 5 2 0.1 1.0

TZX5V6A 5.2 5.5 40 5 5 2 0.1 1.0

TZX5V6B 5.3 5.6 40 5 5 2 0.1 1.0

TZX5V6 5.2 5.9 TZX5V6C 5.4 5.7 40 5 5 2 0.1 1.0

TZX5V6

5.2

5.9

TZX5V6D 5.5 5.8 40 5 5 2 0.1 1.0

TZX5V6E 5.6 5.9 40 5 5 2 0.1 1.0

TZX...

Vishay Semiconductors

Rev. A6, 08-Aug-02 3 (8)

www.vishay.comDocument Number 85614

pe VZmin. VZmax

pe VZmin. VZmax. rZmax. at IZIRmax. at VRIRmax2).at VR2)

Ty e

(V) (V)

Ty e

(V) (V) () (mA) (A) (V) (A) (V)

TZX6V2A 5.7 6.0 15 5 1 3 0.1 2.0

TZX6V2B 5.8 6.1 15 5 1 3 0.1 2.0

TZX6V2 5.7 6.6 TZX6V2C 6.0 6.3 15 5 1 3 0.1 2.0

TZX6V2

5.7

6.6

TZX6V2D 6.1 6.4 15 5 1 3 0.1 2.0

TZX6V2E 6.3 6.6 15 5 1 3 0.1 2.0

TZX6V8A 6.4 6.7 15 5 1 3.5 0.1 3.0

TZX6V8

TZX6V8B 6.6 6.9 15 5 1 3.5 0.1 3.0

TZX6V8 6.4 7.2 TZX6V8C 6.7 7.0 15 5 1 3.5 0.1 3.0

TZX6V8D 6.9 7.2 15 5 1 3.5 0.1 3.0

TZX7V5A 7.0 7.3 15 5 1 5.0 0.1 3.5

TZX7V5

TZX7V5B 7.2 7.6 15 5 1 5.0 0.1 3.5

TZX7V5 7.0 7.9 TZX7V5C 7.3 7.7 15 5 1 5.0 0.1 3.5

TZX7V5D 7.5 7.9 15 5 1 5.0 0.1 3.5

TZX8V2A 7.7 8.1 20 5 1 6.2 0.1 4.0

TZX8V2

TZX8V2B 7.9 8.3 20 5 1 6.2 0.1 4.0

TZX8V2 7.7 8.7 TZX8V2C 8.1 8.5 20 5 1 6.2 0.1 4.0

TZX8V2D 8.3 8.7 20 5 1 6.2 0.1 4.0

TZX9V1A 8.5 8.9 20 5 1 6.8 – –

TZX9V1B 8.7 9.1 20 5 1 6.8 – –

TZX9V1 8.5 9.7 TZX9V1C 8.9 9.3 20 5 1 6.8 – –

TZX9V1

8.5

9.7

TZX9V1D 9.1 9.5 20 5 1 6.8 – –

TZX9V1E 9.3 9.7 20 5 1 6.8 – –

TZX10A 9.5 9.9 25 5 1 7.5 – –

TZX10

10 6

TZX10B 9.7 10.1 25 5 1 7.5 – –

TZX10 9.5 10.6 TZX10C 9.9 10.3 25 5 1 7.5 – –

TZX10D 10.2 10.6 25 5 1 7.5 – –

TZX11A 10.4 10.8 25 5 1 8.2 – –

TZX11

10 4

11 6

TZX11B 10.7 11.1 25 5 1 8.2 – –

TZX11 10.4 11.6 TZX11C 10.9 11.3 25 5 1 8.2 – –

TZX11D 11.1 11.6 25 5 1 8.2 – –

TZX12A 11.4 11.9 35 5 1 9.5 – –

TZX12B 11.6 12.1 35 5 1 9.5 – –

TZX12 11.4 12.7 TZX12C 11.9 12.4 35 5 1 9.5 – –

TZX12

11.4

12.7

TZX12D 12.2 12.7 35 5 1 9.5 – –

TZX12X 11.44 12.03 35 5 1 9.5 – –

TZX13A 12.4 12.9 35 5 1 10 – –

TZX13 12.4 13.4 TZX13B 12.6 13.1 35 5 1 10 – –

TZX13

12.4

13.4

TZX13C 12.9 13.4 35 5 1 10 – –

TZX...

Vishay Semiconductors

Rev. A6, 08-Aug-024 (8)

www.vishay.com Document Number 85614

pe VZmin. VZmax

pe VZmin. VZmax. rZmax. at IZIRmax. at VRIRmax2).at VR2)

Ty e

(V) (V)

Ty e

(V) (V) () (mA) (A) (V) (A) (V)

TZX14A 13.2 13.7 35 5 1 11 – –

TZX14 13.2 14.3 TZX14B 13.5 14.0 35 5 1 11 – –

TZX14

13.2

14.3

TZX14C 13.8 14.3 35 5 1 11 – –

TZX15A 14.1 14.7 40 5 1 11.5 – –

TZX15

14 1

15 5

TZX15B 14.5 15.1 40 5 1 11.5 – –

TZX15 14.1 15.5 TZX15C 14.9 15.5 40 5 1 11.5 – –

TZX15X 14.35 15.09 40 5 1 11.5 – –

TZX16A 15.3 15.9 45 5 1 12 – –

TZX16 15.3 17.1 TZX16B 15.7 16.5 45 5 1 12 – –

TZX16

15.3

17.1

TZX16C 16.3 17.1 45 5 1 12 – –

TZX18A 16.9 17.7 55 5 1 13 – –

TZX18 16.9 19.0 TZX18B 17.5 18.3 55 5 1 13 – –

TZX18

16.9

19.0

TZX18C 18.1 19.0 55 5 1 13 – –

TZX20A 18.8 19.7 60 2 1 15 – –

TZX20 18.8 21.2 TZX20B 19.5 20.4 60 2 1 15 – –

TZX20

18.8

21.2

TZX20C 20.2 21.2 60 2 1 15 – –

TZX22A 20.9 21.9 65 2 1 17 – –

TZX22 20.9 23.3 TZX22B 21.6 22.6 65 2 1 17 – –

TZX22

20.9

23.3

TZX22C 22.3 23.3 65 2 1 17 – –

TZX24A 22.9 24.0 70 2 1 19 – –

TZX24

22 9

25 5

TZX24B 23.6 24.7 70 2 1 19 – –

TZX24 22.9 25.5 TZX24C 24.3 25.5 70 2 1 19 – –

TZX24X 22.61 23.77 70 2 1 19 – –

TZX27A 25.2 26.6 80 2 1 21 – –

TZX27

25 2

28 6

TZX27B 26.2 27.6 80 2 1 21 – –

TZX27 25.2 28.6 TZX27C 27.2 28.6 80 2 1 21 – –

TZX27X 26.99 28.39 80 2 1 21 – –

TZX30A 28.2 29.6 100 2 1 23 – –

TZX30

28 2

31 6

TZX30B 29.2 30.6 100 2 1 23 – –

TZX30 28.2 31.6 TZX30C 30.2 31.6 100 2 1 23 – –

TZX30X 29.02 30.51 100 2 1 23 – –

TZX33A 31.2 32.6 120 2 1 25 – –

TZX33 31.2 34.5 TZX33B 32.2 33.6 120 2 1 25 – –

TZX33

31.2

34.5

TZX33C 33.2 34.5 120 2 1 25 – –

TZX36A 34.2 35.7 140 2 1 27 – –

TZX36

34 2

38 0

TZX36B 35.3 36.8 140 2 1 27 – –

TZX36 34.2 38.0 TZX36C 36.4 38.0 140 2 1 27 – –

TZX36X 35.36 37.19 140 2 1 27 – –

2) Additional measurement

Please note: Additional measurement of voltage group 9V1 to 36 IR at 95 % VZmin = < 35 nA at Tj 25 C

TZX...

Vishay Semiconductors

Rev. A6, 08-Aug-02 5 (8)

www.vishay.comDocument Number 85614

Characteristics (Tj = 25C unless otherwise specified)

95 9611

0 5 10 15

100

200

300

400

500

R – Therm. Resist. Junction / Ambient ( K/W )

thJA

l – Lead Length ( mm )

TL=constant

Figure 1. Thermal Resistance vs. Lead Length

0 40 80 120 160

100

300

400

500

600

P – Total Power Dissipation ( mW )

tot

Tamb – Ambient Temperature ( °C )

200

95 9602

200

Figure 2. Total Power Dissipation vs.

Ambient Temperature

0 5 10 15 20

100

1000

V – Voltage Change ( mV )

VZ – Z-Voltage ( V )

95 9598



IZ=5mA

Tj=25°C

Figure 3. Typical Change of Working Voltage under

Operating Conditions at Tamb=25°C

–60 0 60 120 180

0.8

0.9

1.0

1.1

1.2

1.3

V – Relative Voltage Change

Ztn

Tj – Junction Temperature ( °C )

240

95 9599

VZtn=VZt/VZ(25°C)

TKVZ=1010–4/K 810–4/K

–410–4/K

610–4/K

410–4/K

210–4/K

–210–4/K

Figure 4. Typical Change of Working Voltage vs.

Junction Temperature

0102030

–5

TK – Temperature Coefficient of V ( 10 /K

)

VZ – Z-Voltage ( V )

95 9600

Z–4

IZ=5mA

Figure 5. Temperature Coefficient of Vz vs. Z–Voltage

0 5 10 15

100

150

200

C – Diode Capacitance ( pF )

VZ – Z-Voltage ( V )

95 9601

Tj=25°C

VR=2V

Figure 6. Diode Capacitance vs. Z–Voltage

TZX...

Vishay Semiconductors

Rev. A6, 08-Aug-026 (8)

www.vishay.com Document Number 85614

0 0.2 0.4 0.6 0.8

0.001

0.01

0.1

100

1.0

95 9605

I – Forward Current ( mA )

VF – Forward Voltage ( V )

Tj=25°C

Figure 7. Forward Current vs. Forward Voltage

04 81216

95 9604

100

I – Z-Current ( mA )

VZ – Z-Voltage ( V )

Ptot=500mW

Tamb=25°C

Figure 8. Z–Current vs. Z–Voltage

15 20 25 30

I – Z-Current ( mA )

VZ – Z-Voltage ( V )

95 9607

Ptot=500mW

Tamb=25°C

Figure 9. Z–Current vs. Z–Voltage

0 5 10 15 20

100

1000

r – Dif ferential Z-Resistance ( )

VZ – Z-Voltage ( V )

95 9606



Tj=25°C

IZ=1mA

5mA

10mA

Figure 10. Differential Z–Resistance vs. Z–Voltage

100

1000

Z – Thermal Resistance for Pulse Cond. (K/W)

thp

tp – Pulse Length ( ms )

95 9603

10–1 100101102

tp/T=0.5

tp/T=0.2

tp/T=0.1

tp/T=0.05

tp/T=0.02 tp/T=0.01

Single Pulse RthJA=300K/W

T=Tjmax–Tamb

iZM=(–VZ+(VZ2+4rzjT/Zthp)1/2)/(2rzj)

Figure 11. Thermal Response

TZX...

Vishay Semiconductors

Rev. A6, 08-Aug-02 7 (8)

www.vishay.comDocument Number 85614

Dimensions in mm

Cathode Identification

∅ 1.7 max.

∅ 0.55 max.

3.9 max.26 min.

technical drawings

according to DIN

specifications

94 9366

Standard Glass Case

54 A 2 DIN 41880

JEDEC DO 35

Weight max. 0.3g 26 min.

TZX...

Vishay Semiconductors

Rev. A6, 08-Aug-028 (8)

www.vishay.com Document Number 85614

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid the i r use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the

buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423