G*SiC(R) Technology MegaBright(R) PlusTM LEDs Cxxx-MB290-S0100-Plus Features * * * Applications (R) MegaBright Plus Performance - 12.0mW min Blue * Outdoor LED Video Displays * Automotive Dashboard Lighting Single Wire Bond Structure * White LEDs Class II ESD Rating * Backlighting Description Cree's MegaBright(R) Plus LEDs combine highly efficient InGaN materials with Cree's proprietary G*SiC(R) substrate to deliver superior price/performance for high intensity blue LEDs. These LED chips have a geometrically enhanced vertical chip structure to maximize light extraction efficiency, and require only a single wire bond connection. Sorted Die Kits provide die sheets conveniently sorted into wavelength and radiant flux bins. Cree's MB series chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000V ESD. These LEDs are useful in a broad range of applications such as outdoor full motion LED video signs, automotive lighting and white LEDs, yet can also be used in high volume applications such as LCD backlighting. Cree's MB series chips are compatible with most radial and SMT LED assembly processes. Cxxx-MB290-S0100-Plus Chip Diagram Bottom View Topside View Die Cross Section G * SiC(R) LED Chip 300 x 300 m Mesa (junction) 240 x 240 m Gold Bond Pad 114 m Diameter CPR3BS Rev. (c) Cree, Inc. 2003 All Rights Reserved. Anode (+) h = 250 m Backside Metallization Cathode (-) InGaN SiC Substrate G*SiC(R) Technology MegaBright(R) PlusTM LEDs Cxxx-MB290-S0100-Plus Maximum Ratings at TA = 25C Notes 1&3 DC Forward Current Peak Forward Current (1/10 duty cycle @ 1kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Electrostatic Discharge Threshold (HBM) Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Note 2 Cxxx-MB290-S0100-Plus 30mA 100mA 125C 5V -20C to +80C -30C to +100C 1000 V Class 2 Typical Electrical/Optical Characteristics at TA = 25C, If = 20mA Note 3 Part Number Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), A] Full Width Half Max (D, nm) Dominant Wavelength Radiant Flux Optical Rise Time (, ns) Typ Max Max Typ C460MB290-S0100-Plus 3.5 3.8 10 26 See Bin Table See Bin Table 30 C470MB290-S0100-Plus 3.5 3.8 10 26 See Bin Table See Bin Table 30 Mechanical Specifications Note 4 Description P-N Junction Area (m) Top Area (m) Bottom Area (m) Chip Thickness (m) Au Bond Pad Diameter (m) Au Bond Pad Thickness (m) Back Contact Metal Width (m) Typ Cxxx-MB290-S0100-Plus Dimension 240 x 240 300 x 300 200 x 200 250 114 1.2 19.8 Tolerance 25 25 25 25 20 0.5 -5, +10 Notes: 1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package with Hysol OS4000 epoxy for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller. The forward currents (DC and Peak) are not limited by the G *SiC die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325C (< 5 seconds). 2) Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding the ability of Products to withstand ESD. 3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances Products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages with Hysol OS4000 epoxy. Optical characteristics were measured in a Photoresearch Spectrascan Integrating Sphere. Illuminance E. 4) All Products conform to the listed mechanical specifications within the tolerances shown. 5) Caution: To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80m. CPR3BS Rev. (c) Cree, Inc. 2003 All Rights Reserved. G*SiC(R) Technology MegaBright(R) PlusTM LEDs Cxxx-MB290-S0100-Plus Standard Bins for Cxxx-MB290-S0100-Plus: Radiant Flux LED chips are sorted to the radiant flux and dominant wavelength bins. A sorted die sheet contains die from only one bin. Sorted die kit (Cxxx-MB290-S0100-Plus) orders may be filled with any or all bins (Cxxx-MB290-01xx) contained in the kit. C460MB290-S0100-Plus C460MB290-0105 455nm Radiant Flux C460MB290-0106 12.0mW 460nm Dominant Wavelength 465nm C470MB290-S0100-Plus C470MB290-0107 C470MB290-0108 C470MB290-0109 12.0mW 465nm 470nm 472nm Dominant Wavelength CPR3BS Rev. (c) Cree, Inc. 2003 All Rights Reserved. 475nm G*SiC(R) Technology MegaBright(R) PlusTM LEDs Cxxx-MB290-S0100-Plus Characteristic Curves: These are representative measurements for blue MegaBright(R) products. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Wavelength Shift vs Forward Current Forward Current vs Forward Voltage 16.0 30 14.0 25 12.0 10.0 Shift (nm) If (mA) 20 15 10 8.0 6.0 4.0 2.0 0.0 5 -2.0 -4.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 5 10 15 20 25 30 If (mA) Vf (V) Relative Intensity vs Peak Wavelength Relative Intensity vs Forward Current 100 140.0 120.0 80 Relative Intensity (%) 100.0 % 80.0 60.0 60 40 40.0 20.0 20 0.0 0 5 10 15 If (mA) CPR3BS Rev. (c) Cree, Inc. 2003 All Rights Reserved. 20 25 30 400 500 W avelength (nm ) 600