CPR3BS Rev. -
© Cree, Inc. 2003 All Rights Reserved.
G•SiC® Technology
MegaBright® Plus™ LEDs
Cxxx-MB290-S0100-Plus
Features Applications
• MegaBright® Plus Performance
– 12.0mW min Blue
• Single Wire Bond Structure
• Class II ESD Rating
• Outdoor LED Video Displays
• Automotive Dashboard Lighting
• White LEDs
• Backlighting
Description
Cree's MegaBright® Plus LEDs combine highly efficient InGaN materials with Cree's proprietary G•SiC®
substrate to deliver superior price/performance for high intensity blue LEDs. These LED chips have a
geometrically enhanced vertical chip structure to maximize light extraction efficiency, and require only a
single wire bond connection. Sorted Die Kits provide die sheets conveniently sorted into wavelength and
radiant flux bins. Cree's MB series chips are tested for conformity to optical and electrical specifications
and the ability to withstand 1000V ESD. These LEDs are useful in a broad range of applications such as
outdoor full motion LED video signs, automotive lighting and white LEDs, yet can also be used in high
volume applications such as LCD backlighting. Cree's MB series chips are compatible with most radial and
SMT LED assembly processes.
Cxxx-MB290-S0100-Plus Chip Diagram
Top
side View
G•SiC® LED Chip
300 x 300 µm
Mesa (junction)
240 x 240 µm
Gold Bond Pad
114 µm Diameter
Anode (+)
h = 250
µm
Backside
Metallization
Cathode (-)
InGaN
SiC Substrate
Bottom View Die Cross Section
CPR3BS Rev. -
© Cree, Inc. 2003 All Rights Reserved.
G•SiC® Technology
MegaBright® Plus™ LEDs
Cxxx-MB290-S0100-Plus
Maximum Ratings at TA = 25°C Notes 1&3 Cxxx-MB290-S0100-Plus
DC Forward Current 30mA
Peak Forward Current (1/10 duty cycle @ 1kHz) 100mA
LED Junction Temperature 125°C
Reverse Voltage 5 V
Operating Temperature Range -20°C to +80°C
Storage Temperature Range -30°C to +100°C
Electrostatic Discharge Threshold (HBM) Note 2 1000 V
Electrostatic Discharge Classification (MIL-STD-883E) Note 2 Class 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20mA Note 3
Part Number Forward Voltage
(Vf, V) Reverse Current
[I(Vr=5V), µA] Full Width
Half Max
(λD, nm)
Dominant
Wavelength
Radiant Flux Optical Rise
Time
(τ, ns)
Typ Max Max Typ Typ
C460MB290-S0100-Plus 3.5 3.8 10 26 See Bin Table See Bin Table 30
C470MB290-S0100-Plus 3.5 3.8 10 26 See Bin Table See Bin Table 30
Mechanical Specifications Note 4 Cxxx-MB290-S0100-Plus
Description Dimension Tolerance
P-N Junction Area (µm) 240 x 240 ± 25
Top Area (µm) 300 x 300 ± 25
Bottom Area (µm) 200 x 200 ± 25
Chip Thickness (µm) 250 ± 25
Au Bond Pad Diameter (µm) 114 ± 20
Au Bond Pad Thickness (µm) 1.2 ± 0.5
Back Contact Metal Width (µm) 19.8 -5, +10
Notes:
1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package with Hysol OS4000 epoxy for characterization. Seller
makes no repr esentations regarding ratings for packages other than the T-1 3/4 package used by Seller. The forward currents (DC and Peak) are not limited by the
G •SiC die but by the effect of the LED junction temperature on the package. The junction tem per ature limit of 125°C is a limit of the T-1 3/4 package; junction
temperature should be characterized in a specific package to deter mine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
2) Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are
designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding the ability of Products to withstand ESD.
3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20 mA within
the maximum ra tings shown above. Efficiency decreases at higher currents. T ypical values given are the average values expected by Seller in large quantities and
are provided for information only. Seller gives no assurances Products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1
3/4 packages with Hysol OS4000 epoxy. Optical characteristics were measured in a Photoresearch Spectrascan Integrating Sphere. Illuminance E.
4) All Products conform to the listed mechanical specifications within the tolerances shown.
5) Caution: To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80µm.
CPR3BS Rev. -
© Cree, Inc. 2003 All Rights Reserved.
G•SiC® Technology
MegaBright® Plus™ LEDs
Cxxx-MB290-S0100-Plus
Standard Bins for Cxxx-MB290-S0100-Plus:
LED chips are sorted to the radiant flux and dominant wavelength bins. A sorted die sheet contains die from only one bin. Sorted
die kit (Cxxx-MB290-S0100-Plus) orders may be filled with any or all bins (Cxxx-MB290-01xx) contained in the kit.
12.0mW
12.0mW 475nm
C470MB290-0109
C460MB290-S0100-Plus
C470MB290-S0100-Plus
C470MB290-0107 C470MB290-0108
465nm 470nm 472nm
Dominant W avelength
Radiant FluxRadiant Flux
460nm
C460MB290-0105 C460MB290-0106
465nm455nm Dominant Wa velength
CPR3BS Rev. -
© Cree, Inc. 2003 All Rights Reserved.
G•SiC® Technology
MegaBright® Plus™ LEDs
Cxxx-MB290-S0100-Plus
Characteristic Curves:
These are representative measurements for blue MegaBright® products. Actual curves will vary slightly for the various radiant flux
and dominant wavelength bins.
Wavelength Shift vs Forward Current
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
0 5 10 15 20 25 30
If (mA)
Shift (nm)
Forward Current vs Forward Voltage
0
5
10
15
20
25
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Vf (V)
If (mA)
Relative Intensity vs Peak Wavelength
Relative
Intensity
(%)
Wavelength (nm)
400 500 600
20
40
60
80
100
Relative In te ns i ty vs Forward Cur r e n t
0.0
20.0
40.0
60.0
80.0
100.0
120.0
140.0
0 5 10 15 20 25 30
If (mA)
%
