STW88N65M5-4 N-channel 650 V, 0.024 typ., 84 A, MDmeshTM M5 Power MOSFET in a TO247-4 package Datasheet -- production data Features Order code VDS @Tjmax. RDS(on) max. ID STW88N65M5-4 710 V 0.029 84 A * Higher VDS rating * Higher dv/dt capability 2 4 3 * Excellent switching performance thanks to the extra driving source pin 1 * Easy to drive TO247-4 * 100% avalanche tested Figure 1. Internal schematic diagram Applications * High efficiency switching applications: - Servers - PV inverters - Telecom infrastructure - Multi kW battery chargers 'UDLQ *DWH Description 'ULYHU VRXUFH 3RZHU VRXUFH $0Y This device is an N-channel Power MOSFET based on MDmeshTM M5 innovative vertical process technology combined with the wellknown PowerMESHTM horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high power and superior efficiency. Table 1. Device summary Order code Marking Package Packing STW88N65M5-4 88N65M5 TO247-4 Tube October 2015 This is information on a product in full production. Doc ID 027754 Rev 1 1/13 www.st.com Contents STW88N65M5-4 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 5 2/13 .............................................. 9 TO247-4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Doc ID 027754 Rev 1 STW88N65M5-4 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Gate- source voltage 25 V Drain current (continuous) at TC = 25 C 84 Drain current (continuous) at TC = 100 C 50.5 IDM (1) Drain current (pulsed) 336 A PTOT Total dissipation at TC = 25 C 450 W IAR Max. current during repetitive or single pulse avalanche (pulse width limited by Tjmax) 15 A EAS Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) 2000 mJ 15 V/ns VGS ID Parameter dv/dt (2) Peak diode recovery voltage slope Tstg Tj Storage temperature A - 55 to 150 C Max. operating junction temperature 150 1. Pulse width limited by safe operating area. 2. ISD 84 A, di/dt = 400 A/s, peak VDS < V(BR)DSS, VDD = 400 V. Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max. Rthj-amb Thermal resistance junction-ambient max. Doc ID 027754 Rev 1 Value Unit 0.28 C/W 50 3/13 13 Electrical characteristics 2 STW88N65M5-4 Electrical characteristics (TC = 25 C unless otherwise specified) Table 4. Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage IDSS Zero gate voltage drain current IGSS Gate-body leakage current ID = 1 mA, VGS = 0 V Min. Typ. Max. Unit 650 V VGS = 0 V, VDS = 650 V 1 VGS = 0 V, VDS = 650 V, TC = 125 C 100 VDS = 0 V, VGS = 25 V 100 nA 4 5 V 0.024 0.029 Min. Typ. Max. Unit - 8825 - - 223 - - 11 - - 778 - VGS(th) Gate threshold voltage VDS = VGS, ID = 250 A RDS(on) Static drain-source onVGS = 10 V, ID = 42 A resistance A 3 Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V VGS = 0 V, VDS = 0 to 520 V RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge pF pF - 202 - f = 1 MHz open drain - 1.79 - VDD = 520 V, ID = 42 A, VGS = 10 V (see Figure 16) - 204 - - 51 - - 84 - nC 1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while V DS is rising from 0 to 80% VDSS. 4/13 Doc ID 027754 Rev 1 STW88N65M5-4 Electrical characteristics Table 6. Switching times Symbol td(V) Parameter Voltage delay time tr(V) Voltage rise time tf(i) Current fall time tc(off) Test conditions VDD = 400 V, ID = 56 A RG = 7.2 VGS = 10 V (see Figure 17 and 20) Crossing time Min. Typ. Max. Unit - 150 - - 19 - - 24 - - 45 - Min. Typ. ns Table 7. Source-drain diode Symbol ISD ISDM(1) VSD (2) Parameter Test conditions Max. Unit Source-drain current - 84 A Source-drain current (pulsed) - 336 A - 1.5 V Forward on voltage ISD = 84 A, VGS = 0 trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 84 A, di/dt = 100 A/s VDD = 100 V (see Figure 17) ISD = 84 A, di/dt = 100 A/s VDD = 100 V, Tj = 150 C (see Figure 17) - 544 ns - 14 C - 50 A - 660 ns - 20 C - 60 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 s, duty cycle 1.5%. Doc ID 027754 Rev 1 5/13 13 Electrical characteristics 2.1 STW88N65M5-4 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance $0Y ,' $ 72(=[ . 7M & 7F & 6LQJOHSXOVH LV RQ 2 /L SHU P DW LWH LR G QL E\ Q P WKL D[ VD 5' UH D 6 V V PV PV =WK N 5WKMF WS 6,1*/(38/6( WS 9'6 9 Figure 4. Output characteristics 9*6 9 WS V Figure 5. Transfer characteristics $0Y ,' $ $0Y ,' $ 9'6 9 9 9 9 9'6 9 Figure 6. Gate charge vs gate-source voltage $0Y 9*6 9 9'6 9 9'' 9 ,' $ 9'6 9*6 9 Figure 7. Static drain-source on-resistance $0Y 5'6 RQ 9*6 9 6/13 4J Q& Doc ID 027754 Rev 1 ,' $ STW88N65M5-4 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy $0Y & S) $0Y (RVV &LVV &RVV I 0+] &UVV Figure 10. Normalized gate threshold voltage vs temperature $0Y 9*6 WK QRUP 9'6 9 9'6 9 Figure 11. Normalized on-resistance vs temperature $0Y 5'6 RQ QRUP ,' $ ,' $ 9*6 9 7- & Figure 12. Source-drain diode forward characteristics $0Y 96' 9 7- & Figure 13. Normalized V(BR)DSS vs temperature $0Y 9 %5 '66 QRUP 7- & ,' P$ 7- & 7- & ,6' $ Doc ID 027754 Rev 1 7- & 7/13 13 Electrical characteristics STW88N65M5-4 Figure 14. Switching losses vs gate resistance (1) $0Y ( P (RQ 9'' 9 9*6 9 7- & ,' $ (RII 5* 1. Eon including reverse recovery of a SiC diode. 8/13 Doc ID 027754 Rev 1 STW88N65M5-4 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 mF 2200 RL mF IG=CONST VDD VGS RG 100 Vi=20V=VGMAX VD 2200 mF D.U.T. PW D.U.T. VG 2.7k 47k GND1 (driver signal) GND2 (power) 1k PW GND1 AM15855v1 Figure 17. Test circuit for inductive load switching and diode recovery times A A AM15856v1 Figure 18. Unclamped inductive load test circuit A D G GND2 L D.U.T. FAST DIODE B B L=100mH S B D 25 W 3.3 mF VD 1000 mF 2200 mF VDD 3.3 mF VDD ID G S RG Vi GND2 GND1 D.U.T. Pw GND1 AM15857v1 Figure 19. Unclamped inductive waveform V(BR)DSS GND2 AM15858v1 Figure 20. Switching time waveform &RQFHSWZDYHIRUPIRU,QGXFWLYH/RDG7XUQRII ,G VD 9GV ,G 7GHOD\RII RII IDM 9JV 9JV RQ ID 9JV , W VDD VDD ,G 9GV 9GV 7ULVH AM01472v1 Doc ID 027754 Rev 1 7IDOO 7FU RVV RYHU $0Y 9/13 13 Package information 4 STW88N65M5-4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 4.1 TO247-4 package information Figure 21. TO247-4 package outline B$ 10/13 Doc ID 027754 Rev 1 STW88N65M5-4 Package information Table 8. TO247-4 package mechanical data mm Dim. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 b1 1.15 b2 0 0.20 c 0.59 0.66 c1 0.58 0.60 0.62 D 20.90 21.00 21.10 D1 16.25 16.55 16.85 D2 1.05 1.20 1.35 D3 24.97 25.12 25.27 E 15.70 15.80 15.90 E1 13.10 13.30 13.50 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 2.44 2.54 2.64 e1 4.98 5.08 5.18 L 19.80 19.92 20.10 P 3.50 3.60 3.70 1.29 1.20 P1 1.25 7.40 P2 2.40 Q 5.60 S 2.50 2.60 6.00 6.15 T 9.80 10.20 U 6.00 6.40 Doc ID 027754 Rev 1 11/13 13 Revision history 5 STW88N65M5-4 Revision history Table 9. Document revision history 12/13 Date Revision 21-Oct-2015 1 Changes First release. Doc ID 027754 Rev 1 STW88N65M5-4 IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2015 STMicroelectronics - All rights reserved Doc ID 027754 Rev 1 13/13 13