This is information on a product in full production.
October 2015 Doc ID 027754 Rev 1 1/13
STW88N65M5-4
N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh™ M5
Power MOSFET in a TO247-4 package
Datasheet — production data
Figure 1. Internal schematic diagram
Features
•Higher V
DS
rati n g
•Higher dv/dt capability
•Excellent switching performance thanks to the
extra driving source pin
•Easy to drive
•100% avalanche tested
Applications
•High efficiency switching applications:
–Servers
–PV inverters
– Telecom infrastructure
– Multi kW battery chargers
Description
This device is an N-channel Power MOSFET
based on MDmesh™ M5 innovative vertical
process technology combined with the well-
known PowerMESH™ horizontal layout. The
resulting product offers extremely low on-
resistance, making it particularly suitable for
applications requiring high power and superior
efficiency.
TO247-4
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DS
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STW88N65M5- 4 710 V 0.029 Ω84 A
Table 1. Device summary
Order code Marking Package Pac king
STW88N65M5-4 88N65M5 TO247-4 Tube
www.st.com
Contents STW88N65M5-4
2/13 Doc ID 027754 Rev 1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Elect rical char acteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 TO247-4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Doc ID 027754 Rev 1 3/13
STW88N65M5-4 Electrical ratings
13
1 Electrical ratings
Table 2. Absolute maximum rati ngs
Symbol Parameter Value Unit
V
GS
Gate- sou rce voltage ±25 V
I
D
Drain current (continuous) at T
C
= 25 °C 84 A
Drain current (continuous) at T
C
= 100 °C 50.5
I
DM (1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 336 A
P
TOT
Total dissipation at T
C
= 25 °C 450 W
I
AR
Max. cur r ent duri ng repetit ive or single puls e
avalanche (pulse width limited by T
jmax
)15 A
E
AS
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V) 2000 mJ
dv/dt
(2)
2. I
SD
≤ 84 A, di/dt = 400 A/µs , peak V
DS
< V
(BR)DSS
, V
DD
= 400 V.
Peak diode recovery voltage slope 15 V/ns
T
stg
Storage temperature - 55 to 150 °C
T
j
Max. operati ng jun cti on tem pera ture 150
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max. 0.28 °C/W
R
thj-amb
Thermal resistance junction- ambient max. 50
Ele ctrical characteristics STW88N65M5-4
4/13 Doc ID 027754 Rev 1
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage I
D
= 1 mA, V
GS
= 0 V 650 V
I
DSS
Zero gate voltage
drain current
V
GS
= 0 V, V
DS
= 650 V 1 µA
V
GS
=0V, V
DS
=650V,
T
C
=125°C 100
I
GSS
Gate-body leakage
current V
DS
= 0 V, V
GS
= ± 25 V ± 100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 3 4 5 V
R
DS(on)
Static d rain-s ource on -
resistance V
GS
= 10 V, I
D
= 42 A 0.024 0.029 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
- 8825 -
pF
C
oss
Out put capacitance - 223 -
C
rss
Reverse transfer
capacitance -11-
C
o(tr)(1)
1. C
o(tr)
is a constant capacitance value that gives the same charging time as C
oss
while V
DS
is rising from 0
to 80% V
DSS
.
Equivalent
capacitance time
related V
GS
= 0 V, V
DS
= 0 to 520 V
- 778 -
pF
C
o(er)(2)
2. C
o(er)
is a constant capacitance value that gives the same stored energy as C
oss
while V
DS
is rising from 0
to 80% V
DSS
.
Equivalent
capacitance energy
related - 202 -
R
G
Intrinsic gate
resistance f = 1 MHz open drai n - 1.79 - Ω
Q
g
Total gate charg e V
DD
= 520 V, I
D
= 42 A,
V
GS
= 10 V
(see Figure 16)
- 204 -
nCQ
gs
Gate-sou rce charge - 51 -
Q
gd
Gate-drain charge - 84 -
Doc ID 027754 Rev 1 5/13
STW88N 65M 5- 4 Electri cal chara ct er ist ics
13
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(V)
Voltage delay time V
DD
= 400 V, I
D
= 56 A
R
G
= 7.2 Ω V
GS
= 10 V
(see Figure 17 and 20)
- 150 -
ns
t
r(V)
Voltage rise time - 19 -
t
f(i)
Current fall time - 24 -
t
c(off)
Crossing time - 45 -
Table 7. Source-drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 84 A
I
SDM(1)
1. Pulse width limited by safe operating area.
Source-dra in cur rent (pulse d) - 336 A
V
SD
(2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Forward on voltage I
SD
= 84 A, V
GS
= 0 - 1.5 V
t
rr
Reverse recovery time I
SD
= 84 A,
di/dt = 100 A/µs
V
DD
= 100 V (see Figure 17)
- 544 ns
Q
rr
Reverse recovery charge - 14 µC
I
RRM
Reverse recovery current - 50 A
t
rr
Reverse recovery time I
SD
= 84 A,
di/dt = 100 A/µs
V
DD
= 100 V, T
j
= 150 °C
(see Figure 17)
- 660 ns
Q
rr
Reverse recovery charge - 20 µC
I
RRM
Reverse recovery current - 60 A
Ele ctrical characteristics STW88N65M5-4
6/13 Doc ID 027754 Rev 1
2.1 Electrical characteristics (curves)
Figure 2. Safe ope rating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance
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Doc ID 027754 Rev 1 7/13
STW88N 65M 5- 4 Electri cal chara ct er ist ics
13
Figure 8. Capacitance variations Figure 9. Out put capacitance stored energy
Figure 10. Normalized gate threshold voltage vs
temperature Figure 11. Normalized on-resistance vs
temperature
Figure 12. Source -drain diode forward
characteristics Figure 13. Normalized V
(BR)DSS
vs temperature
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Ele ctrical characteristics STW88N65M5-4
8/13 Doc ID 027754 Rev 1
Figure 14. Switching losses vs gate resistance
(1)
1. Eon including reverse recovery of a SiC diode.
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STW88N65M5-4 Test circuits
13
3 Test circuits
Figure 15. Switching times test circuit for
resistive load Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
switching and diode recovery times Figure 18. Unclamped inductive load test circ uit
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
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Package information STW88N65M5-4
10/13 Doc ID 027754 Rev 1
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
4.1 TO247-4 package information
Figure 21. TO247-4 package outline
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Doc ID 027754 Rev 1 11/13
STW88N65M5-4 Package information
13
Table 8. TO247-4 package mechanical data
Dim. mm
Min. Typ. Max.
A 4.90 5.00 5.10
A1 2.31 2.41 2.51
A2 1.90 2.00 2.10
b1.16 1.29
b1 1.15 1.20 1.25
b2 0 0.20
c0.59 0.66
c1 0.58 0.60 0.62
D 20.90 21.00 21.10
D1 16.25 16.55 16.85
D2 1.05 1.20 1.35
D3 24.97 25.12 25.27
E 15.70 15.80 15.90
E1 13.10 13.30 13.50
E2 4.90 5.00 5.10
E3 2.40 2.50 2.60
e 2.44 2.54 2.64
e1 4.98 5.08 5.18
L 19.80 19.92 20.10
P 3.50 3.60 3.70
P1 7.40
P2 2.40 2.50 2.60
Q5.60 6.00
S6.15
T9.80 10.20
U6.00 6.40
Revision history STW88N65M5-4
12/13 Doc ID 027754 Rev 1
5 Revision history
Table 9. Document revision history
Date Revision Changes
21-Oct-2015 1 First release.
Doc ID 027754 Rev 1 13/13
STW88N65M5-4
13
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