SMT Multi TOPLED SFH 331 Wesentliche Merkmale * SMT-Gehause mit rotem Sender (635 nm) und Si-Fototransistor * Geeignet fur SMT-Bestuckung * Gegurtet lieferbar * Sender und Empfanger getrennt ansteuerbar * Geeignet fur IR-Reflow Loten Features * SMT package with red emitter (635 nm) and Si-phototransistor * Suitable for SMT assembly * Available on tape and reel * Emitter and detector can be controlled separately * Suitable for IR-reflow soldering Anwendungen Applications * Datenubertragung * Wegfahrsperre * Infrarotschnittstelle * Data transmission * Lock bar * Infrared interface Typ Type Bestellnummer Ordering Code SFH 331 Q62702-P1634 2000-01-01 1 OPTO SEMICONDUCTORS SFH 331 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value LED Einheit Unit Transistor Betriebstemperatur Operating temperature range Top - 40 ... + 100 - 40 ... + 100 C Lagertemperatur Storage temperature range Tstg - 40 ... + 100 - 40 ... + 100 C Sperrschichttemperatur Junction temperature Tj + 100 + 100 C Durchlastrom (LED) Forward current (LED) IF 30 - mA Kollektorstrom (Transistor) Collector current (Transistor) IC - 15 mA Stostrom Surge current t 10 s, D = 0.005 IFM 500 75 mA Sperrspannung (LED) Reverse voltage (LED) VR 5 - V Kollektor-Emitter Spannung (Transistor) Collector-emitter voltage (Transistor) VCE - 35 V Verlustleistung Power dissipation Ptot 100 165 mW RthJA 450 450 K/W RthJS 350 - K/W Warmewiderstand Sperrschicht/Umgebung Thermal resistance junction/ambient Montage auf PC-Board1) (Padgroe 16 mm2) mounting on pcb1) (pad size 16 mm2) Sperrschicht / Lotstelle junction / soldering joint 1) PC-board: G30/FR4 Note: Die angegebenen Grenzdaten gelten fur den Chip, fur den sie angegeben sind, unabhangig vom Betriebszustand des anderen. The stated max. ratings refer to the specified chip regardless of the operating status of the other one. 2000-01-01 2 OPTO SEMICONDUCTORS SFH 331 Kennwerte LED (TA = 25 C) Characteristics LED Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 10 mA (typ.) (typ.) peak 635 nm Dominantwellenlange Dominant wavelength IF = 10 mA (typ.) (typ.) dom 628 nm Spektrale Bandbreite bei 50% von rel max Spectral bandwidth at 50% of rel max IF = 10 mA (typ.) (typ.) 45 nm 2 120 Grad deg. Abstrahlwinkel bei 50% von V (Vollwinkel) Viewing angle at 50% of V Durchlaspannung Forward voltage IF = 10 mA (typ.) (max.) VF VF 2.0 2.6 V V Sperrstrom Reverse current VR = 5 V (typ.) (max) IR IR 0.01 10 A A Kapazitat, Capacitance VR = 0 V, f = 1 MHz (typ.) Co 12 pF (typ.) (typ.) tr tf 300 150 ns ns (typ.) IV 6 (4.0 ... 12.5) mcd Schaltzeiten: Switching times: V from 10% to 90% V from 90% to10% IF = 100 mA, tp = 10 s, RL = 50 Lichtstarke (Gruppe JK) Luminous intensity (group JK) IF = 10 mA 2000-01-01 3 OPTO SEMICONDUCTORS SFH 331 Kennwerte Fototransistor (TA = 25 C, = 950 nm) Characteristics Phototransistor Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 860 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 380 ... 1150 nm Bestrahlungsempfindliche Flache ( 240 m) Radiant sensitive area ( 240 m) A 0.045 mm2 Abmessungen der Chipflache Dimensions of chip area LxB 0.45 x 0.45 mm x mm Abstand Chipoberflache zu Gehauseoberflache Distance chip surface to case surface H 0.5 ... 0.7 mm Halbwinkel Half angle 60 Grad deg. Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 CCE 5.0 pF Dunkelstrom Dark current VCE = 25 V, E = 0 ICEO 1 ( 200) nA Fotostrom Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V IPCE 16 A Anstiegszeit/Abfallzeit Rise time/Fall time IC = 1 mA, VCC = 5 V, RL = 1 k tr, tf 7 s Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = 5 A, Ee = 0.1 mW/cm2 VCEsat 150 mV 2000-01-01 4 OPTO SEMICONDUCTORS SFH 331 LED Radiation Characteristics rel = f () Phototransistor Directional Characteristics Srel = f () 40 30 20 10 0 50 OHL01660 1.0 0.8 0.6 60 0.4 70 0.2 80 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 LED Relative Spectral Emission rel = f (), TA = 25 C, IF = 20 mA V() = Standard Eye Response Curve OHL02350 100 % rel 80 V 60 40 20 super-red 0 400 450 500 550 600 650 nm 700 2000-01-01 5 OPTO SEMICONDUCTORS SFH 331 Forward Current IF = f (VF), TA = 25 C Rel. Luminous Intensity V/V(10mA) = f (IF), TA = 25 C OHL02351 10 2 F mA Perm. Pulse Handling Capability IF = f (tp), duty cycle D = parameter, TA = 25 C OHL02316 10 1 OHL01686 10 3 tP F V tP D= 5 5 super-red 10 -1 super-red T D = 0.005 0.01 0.02 0.05 0.1 10 0 10 1 F T mA V(10mA) 10 2 0.2 5 5 10 0 10 5 0.5 -2 DC 5 10 -1 1.0 1.4 1.8 2.2 2.6 Max. Permissible Forward Current IF = f (TA) F 10 -3 10 3.0 V 3.4 VF 5 10 0 5 10 1 mA 10 F peak 10 -4 10 -3 10 -2 10 -1 10 0 s 10 1 tp Dominant Wavelength dom = f (TA), IF = 20 mA OHL02104 690 OHL02105 690 dom nm 50 10 1 -5 10 2 Wavelength at Peak Emission peak = f (TA), IF = 20 mA OHL01661 60 mA -1 nm 650 650 40 super-red 630 super-red 630 30 orange 610 20 10 610 590 yellow 590 570 green 570 orange yellow green pure-green pure-green 0 550 0 20 40 60 Forward Current VF = f (TA), IF = 10 mA 2.4 VF 80 C 100 TA 0 20 40 60 80 C 100 TA 550 0 20 40 60 80 C 100 TA Rel. Luminous Intensity V/V(25 C) = f (TA), IF = 10 mA OHL02106 OHL02150 2.0 V V V (25 C) 2.2 1.6 1.2 2.0 yellow green green super-red orange yellow 1.8 0.8 orange super-red pure-green pure-green 0.4 1.6 1.4 0 20 40 60 80 C 100 0.0 0 20 40 60 2000-01-01 80 C 100 TA TA 6 OPTO SEMICONDUCTORS SFH 331 Phototransistor Rel. Spectral Sensitivity Srel = f () OHF01121 100 Photocurrent IPCE = f (VCE), Ee = Parameter OHF01529 10 0 mA PCE S rel % Dark Current ICEO = f (VCE), E = 0 80 60 1 mW cm 2 0.5 mW cm 2 0.25 mW cm 2 0.1 mW cm 2 OHF01527 10 1 nA CEO 10 0 10 -1 10 -1 40 10 -2 20 0 400 600 800 1000 nm 1200 Total Power Dissipation Ptot = f (TA) OHF00871 200 10 -2 5 10 15 20 25 30 V 35 V CE Capacitance CCE = f (VCE), f = 1 MHz, E = 0 OHF01528 5.0 mW C CE pF 160 4.0 P tot 0 10 -3 0 5 10 15 20 25 30 V 35 V CE Photocurrent IPCE/IPCE25 = f (TA), VCE = 5 V PCE OHF01524 1.6 PCE 25 1.4 1.2 3.5 1.0 3.0 120 80 2.5 0.8 2.0 0.6 1.5 0.4 1.0 40 0.2 0.5 0 0 20 40 60 Dark Current ICEO = f (TA), VCE = 5 V, E = 0 OHF01530 10 3 nA 0 10 -2 80 C 100 TA CEO 10 0 10 1 V 10 2 V CE 0 -25 0 25 50 75 C 100 TA Photocurrent IPCE = f (Ee), VCE = 5 V OHF01924 10 3 A PCE 10 2 10 2 10 1 10 1 10 0 10 0 10 -1 -25 10 -1 0 2000-01-01 25 50 75 C 100 TA 10 -1 -3 10 4 3 2 mW/cm 2 10 -2 10 0 Ee 7 OPTO SEMICONDUCTORS SFH 331 Mazeichnung Package Outlines 3.0 2.6 2.3 2.1 0.9 0.7 3 C C E 0.1 typ 1.1 0.5 3.4 3.0 A 3.7 3.3 2 (2.4) 0.8 0.6 2.1 1.7 1 4 0.18 0.12 Package marking Emission color : super-red 0.6 0.4 GPL06924 Mae in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified. 2000-01-01 8 OPTO SEMICONDUCTORS