TiQuint @. SEMICONDUCTOR T1P2701012-SP 10 W, 12V, 500 MHz-3 GHz, Powerband pHEMT RF Power Transistor Introduction The T1P2701012-SP is a POWERBAND discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 3GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 10watts across the entire band when op- erated in the TriQuint wide-band test fixture. The T1P2701012-SP can also be used in narrow band appli- cations and is rated at 15VVatts P1dB at 3GHz. Figure 1. Available Packages Features -Exceptional Instantaneous band-width performance fram Table 1. Maximum Ratings sym Parameter Value Notes Vt | Positive Supply Voltage 12.5V 2/ V | Negative Supply Voltage Range -5V to OV + | Positive Supply Current 5.64 2/ | Ig | | Gate Supply Current 70 mA Pp | Power Dissipation See note 3] 2/ 3/ Tey | Operating Channel Temperature 150C 4/ 1/ These ratings represent the maximum operable values for this device, 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed Pp. 3/ For a median life time of 1E+6 hrs, Power dissipation is limited to: Pp(max) = (150 C - TBASE C) / 8.3 (C/W) 4/ Junction operating temperature will directly affect the device median time to failure(Tpq). For maximum life, it is recom- mended that junction temperatures be maintained at the lowest possible levels. Table 2. Thermal Information Parameter Test Conditions | TCH Bc T (Cc) | CC/w) | (HRS) 8)c Thermal Resis- | Vd =10V 145 6.3 1.6E+6 tance (channelto | Idg=S900 mA backside of carrier) | Pdiss = 9 W Figure 2. Lifetime Median Curve SOOMHz - 3GHz 1E+13 -Increased efficiency results in significant advantages ieee -Smaller and lighter systems e , -Reduced system component costs BS 1E+i1 } -Reduced energy consumption z 4.Es10 | -Typical Performance ratings a -Wide-Band 500MHz - 3GHz E 1.+09 | {as tested in TriQuint Wideband Fixture) 2 ses 4 -10dB Gain _ -50% Efficiency & ET | -10Watt P1dB SB 1.6406 | -Marrow Band up to 3GHz = -12dB Gain 1.E+05 | -60% Efficiency 1E+04 LE -15%Watt P1dB 2 6 550si7SH (i 1sii2H SOS 200 Channel Temperature ( ) Preliminary Data Sheet: Subject to change without notice For additional information and the latest specifications, see our website: www.triquint.cam Revision B, August 2009TiQuint @. SEMICONDUCTOR T1P2701012-SP 10 W, 12V, 500 MHz-3 GHz, Powerband pHEMT RF Power Transistor Electrical Characteristics Recommended operating conditions apply unless otherwise specified: Ta = 25 C. Table 3. de Characteristics Parameter Symbol Min Typ Max Unit Saturated Drain Current Idss 3000 _ mA, Transconductance Gm _ 4000 ms Finch-off Voltage Vp 1.35 1 -0.65 V Breakdown Voltage Gate-Source Vecs -30 8 ao Breakdown Voltage Gate-Drain Vecp -30 A5 Vv Table 4. RF Characteristics Parameter Symbol Min | Typ | Max | Unit Functional Tests, Instantaneous Band-Width (Tested in TriQuints Wide-Band Test Fixture) Gain @ PidB, 500MHz-3GHz G 10 dB (VDS = 12 , POUT = 10 W, IDD = 200 mA) PidB, 500MHz-3GHz PidB _ 10 =_ Ww (VDS = 12 V, POUT = 10 W, IDD = 200 mA) Power Added Efficiency, 500MHz-3GHz 45 x (VDS = 12 , POUT = 10 W, IDD = 200 mA) Functional Tests, Narrow Band RF Performance (1GHz) Gain G FF dB (VDS = 12 V, POUT = 15 W, IDQ = 200 mA) Output Power PidB _ 15 - Ww (VD5 = 12 , 1dB compression, IDQ = 200 mA) Drain Efficiency - _ 59 % (VDS = 12 V, POUT = P1dB, IDQ = 200 mA) Ruggedness _ No degradation in output power. (VDS = 12 V, POUT = 15 W, IDQ = 200 mA, f = 500 MHz, VSWR = 3:1, all angles) Preliminary Data Sheet: Subject to change without notice & For additional information and the latest specifications, see our website: www.triquint.cam Revision B, August 2009TiQuint @. SEMICONDUCTOR T1P2701012-SP 10 W, 12V, 500 MHz-3 GHz, Powerband pHEMT RF Power Transistor Figure 3. P1dB and Efficiency (Narrow Band Performance Plotted Over Frequency) 15 , p18 80 10; rs 60 = o = e, g : Oo. o. +40 5) 520 0! l | 19 1000 1500 2000 2500 Frequency [MHz] Preliminary Data Sheet: Subject to change without notice & For additional information and the latest specifications, see our website: www.triquint.cam Revision B, August 2009TiQuint @. SEMICONDUCTOR T1P2701012-SP 10 W, 12V, 500 MHz-3 GHz, Powerband pHEMT RF Power Transistor Figure 4. P1dB and Gain (Narrow Band Performance Plotted Over Frequency) \20 =. oO oO oo 410 0 ! ! Ie 1000 1500 2000 2500 Frequency [MHz] Preliminary Data Sheet: Subject to change without notice For additional information and the latest specifications, see our website: www.triquint.cam Revision B, August 2009TiQuint @. SEMICONDUCTOR T1P2701012-SP 10 W, 12V, 500 MHz-3 GHz, Powerband pHEMT RF Power Transistor Figure 5. Plot of impedances to be presented to the source and load of the device for optimal RF performance. 2) LOOOMHz Impedance 1000MHz ; Efficiency 2500MHz ap Load Impedance Preliminary Data Sheet: Subject to change without notice Cy For additional information and the latest specifications, see our website: www.triquint.cam Revision B, August 2009TiQuint @. SEMICONDUCTOR T1P2701012-SP 10 W, 12V, 500 MHz-3 GHz, Powerband pHEMT RF Power Transistor Figure 6. S Parameters 900mA, 12 Volts T1P2701012-SP S-Parameters (@ 12V 900mA) 20 I T T T in 10} ea re a OF cara a, = -10} = ay] ao -20r S45 " 24 -30/ Fy a ee eee S4p S20 -40 ! | I 500 1000 1500 2000 2500 Freq. [MHz] Preliminary Data Sheet: Subject to change without notice ly For additional information and the latest specifications, see our website: www.triquir J Revision B, August 2009TiQuint @. SEMICONDUCTOR T1P2701012-SP 10 W, 12V, 500 MHz-3 GHz, Powerband pHEMT RF Power Transistor Table 5. S Parameters 900mA, 12 Volts Freq. (MHz)|Real(S11)llmag(S1 1) Real(S2 1 )|lmag(S21]Real(S12)lmag(S12) Real(S22)|Imag(S22) 300 -0.9307 | -0.1207 | -0.0665 | 5.10135 | 0.01135] 0.00708 | -0.7757 | -0.0124 600 -0.939 | -0.0893 | 0.12622 | 4.26706 | 0.01151 | 0.00838 | -0.7729 | -0.0055 700 -0.9423 | -0.0652 | 0.26221 | 3.65341 | 0.01145} 0.00948 | -0.7751 | 0.00013 800 -0.9431 | -0.0457 | 0.34405 | 3.17545 | 0.01145] 0.0106 | -0.7765 | 0.00428 900 -0.9448 | -0.0303 | 0.39014] 2.8255 | 0.01143} 0.0117 | -0.7764 | 0.00767 1000 -0.9473 | -0.0164 | 0.4278 | 2.52434] 0.0115 | 0.01286] -0.78 | 0.01299 1100 -0.9468 | -0.0039 | 0.45361 | 2.28046 | 0.01141 | 0.01376] -0.7807 | 0.01654 1200 -0.9468 | 0.0079 | 0.47155] 2.07291 | 0.01169} 0.01472 | -0.7822 | 0.01987 1300 -0.9479 | 0.01842 | 0.4925 | 1.9043 |0.01174] 0.0159 | -0.7837 | 0.02157 1400 -0.9482 | 0.02885 | 0.51175 | 1.76969 | 0.01192} 0.01696 | -0.7842 | 0.02303 1500 -0.9463 | 0.04065 | 0.53656 | 1.64687 | 0.01242] 0.0181 | -0.7843 | 0.02466 1600 -0.9469 | 0.04868 | 0.53226] 1.5342 | 0.01228} 0.01907 | -0.7857 | 0.02895 1700 -0.9455 | 0.05745 | 0.54947 | 1.42777 | 0.01257] 0.01997 | -0.7872 | 0.02933 1800 -0.9462 | 0.06551 | 0.56079] 1.34202 | 0.01268} 0.02086] -0.787 | 0.03124 1900 0.9457 | 0.07494 | 0.57121 | 1.26916 | 0.01304] 0.02209 | -0.7855 | 0.05541 2000 -0.9453 | 0.08315 | 0.56887 | 1.19705 | 0.01292] 0.02307] -0.787 | 0.03937 2100 -0.9446 | 0.09464 | 0.57385] 1.13478 | 0.01307} 0.02465 | -0.7899 | 0.04435 2200 -0.9429 | 0.10118 | 0.57936] 1.07323 | 0.01376] 0.02537 | -0.7886 | 0.04469 2300 -0.941 | 0.11071 | 0.59207 | 1.02035 | 0.01425] 0.02642 | -0.788 | 0.04657 2400 -0.9398 | 0.11908 | 0.58831 | 0.96607 | 0.01441 | 0.02742 | -0.7877 | 0.05118 2500 -0.9386 | 0.12642 | 0.57374 | 0.91549 | 0.01422] 0.02781 | -0.7896 | 0.05774 2600 -0.9404 | 0.13279 | 0.57921 | 0.87297 | 0.01435] 0.02993 | -0.7916 | 0.05971 2/00 -0.9386 | 0.14154] 0.5826 | 0.83629 | 0.01494/ 0.03072 | -0.7895 | 0.06451 2800 -0.9378 | 0.15298 | 0.57891 | 0.80993 | 0.01472 | 0.03278 | -0.7919 | 0.07347 2900 -0.934 | 0.16049 | 0.58357 | 0.76239 |0.01577| 0.0332 | -0.7927 | 0.07262 3000 -0.9338 | 0.16637 | 0.58289 | 0.72742 | 0.01593} 0.03402 | -0.7938 | 0.07587 a Bee eecuateriaihe Fee canis ee eit wwwtriqu Revision B, August 2009TiQuint @. SEMICONDUCTOR T1P2701012-SP 10 W, 12V, 500 MHz-3 GHz, Powerband pHEMT RF Power Transistor Table 6. Table of RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or Load-pull system. The data is representative of typical device performance for both 100uSecond pulse width, 10% duty cycle conditions and 1000uSecond pulse width, 10% duty cycle conditions. Frequency Gain] P1dB} PidB} PAE [MHz] real(in)] imag(Tin)| real(Zin) | imag(Zin)| real(Cout) | imag(fout)| real(Zout)| imag(Zout)| [dB] | (VW) |[dBm]} [%] Preliminary Data Sheet: Subject to change without notice Cy For additional information and the latest specifications, see our website: www.triquint.cam Revision B, August 2009TiQuint @. SEMICONDUCTOR T1P2701012-SP 10 W, 12V, 500 MHz-3 GHz, Powerband pHEMT RF Power Transistor Figure 7. Typical Instantaneous Wideband Performance Data, 500MHz-2.7GHz (tested in TriQuint Wideband Fixture) 10-W pHEMT, 500MHz-2700MHz IdB-Compressed Power and Drain Efficiency vs. Frequency Va = /2 : b= 020A At, i 65 At i) 45 54 = a4 SM z. 2 43 44 : i i i L 1 1 Be 1 A. 4 J os oF of 4-1 13 15 17 3 2304625 #27 f [GHz] CW |-dB compression 10-W pHEMT, 500MHz-2700MHz 1dB-Compressed Power and Gain vs. Frequency Vip = !2 : 1, = 0a A Ae ' 1 1 1 1 1 T 1 t ath 4 18 fi 16 4 14 = 44 I Ps 2 43 10 : i _ = nN A 40) 4 a) yah L L L L L L L L n 1 ly Os O7 Oo 1.1 13 14 L.? 19 Zl 24 2a af f [GHz] CW 1-8 compression Preliminary Data Sheet: Subject to change without notice & For additional information and the latest specifications, see our website: www.triquint.cam Revision B, August 2009TiQuint @. SEMICONDUCTOR T1P2701012-SP 10 W, 12V, 500 MHz-3 GHz, Powerband pHEMT RF Power Transistor Package Dimensions Note: All dimensions in inches. Scale 8:1 DRAIN 45 086 [2.14] t SOURCE : [FLANGE] ! T 070 a7 [2.29] (p28) (22! FLANGE r UD DKA 350+ /008 [6.6920.20] } of 0 U U Uv U a ' sadiiie O56 An0 |, Lea [6.13] 004 fh.42] TOP VIEW [O10] | o742.006 [2.3920.15) END VIEW 351 rT [a.92] _ LID Dim I | | | ALL DIMENSIONS ARE IM aa 1 | ] UNLESS OTHERWISE SPECIFIE tog) TOLERANCES DECIMALS ANGULAR { 3x s0.01(25) x 305 / et) EX 20008 [.08) [#14] SIDE VIEW Preliminary Data Sheet: Subject to change without notice For additional information and the latest specifications, see our website: www.triquint.cam Revision B, August 2009